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    TOSHIBA LATERAL MOS Search Results

    TOSHIBA LATERAL MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA LATERAL MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSM3K11T

    Abstract: No abstract text available
    Text: SSM3K11T Under Development TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Lateral SSM3K11T The information contained herein in subject to change without notice; likewise, product development may be discontinued. Unit in: mm DC-DC Converter High Speed Switching Applications


    Original     		PDF SSM3K11T SSM3K11T

    top mark w1w

    Abstract: TOSCALE-H2000 dehumidifier transistor w1w TOSCALE-C400L H2000 transistor w1d 90 w1d transistor toshiba line output transformers vortex cooler
    Text: CCD Width Gage and Crop Meter for Hot-rolled Strip General The TOSCALE-H2000 continuously and accurately measures the width of the strip at hot strip mills and the plane shape of the top and tail ends as the strip is moving. This gage increases productivity by making it


    Original     		PDF OSCALE-H2000 OSCALE-C400L C2100B EJD-052A top mark w1w TOSCALE-H2000 dehumidifier transistor w1w TOSCALE-C400L H2000 transistor w1d 90 w1d transistor toshiba line output transformers vortex cooler

    TOSHIBA RECTIFIER

    Abstract: toshiba new label
    Text: Small Surface-Mount Rectifiers US-FLAT TM, S-FLAT TM and M-FLAT TM Series Today’s mobile and office automation equipment is becoming ever smaller and slimmer. In response to this market trend, Toshiba have developed an ultra-small surface-mount US-FLAT, S-FLAT, M-FLAT Series rectifier which allows high-density


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    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET Construction and Characteristics Power MOSFET in Detail 2. Construction and Characteristics Since Power MOSFETs operate principally as majority carrier devices, adverse influences are relatively small magnitude or importance. This is in contrast to the situation with minority carrier


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    S-FLAT PACKAGE

    Abstract: No abstract text available
    Text: Small Surface-Mount Rectifiers S-FLAT TM and M-FLAT TM Series S-FL Today’s mobile and office automation equipment is becoming ever smaller and slimmer. In response to this market trend, Toshiba have developed an ultra-small surface-mount S-Flat package rectifier which allows high-density


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    Toshiba MRI

    Abstract: "CT scan" Clare making
    Text: CASE STUDY Expanding Diagnostic Imaging Services with State-of-the-Art Open MRI Technology S T R AT E G Y F O R S U C C E S S • ■ ■ ■ Feeling the impact of today’s highly competitive healthcare environment, the hospital administrators and medical staff of


    Original     		PDF 211-bed MRPR0002US Toshiba MRI "CT scan" Clare making

    BCD8

    Abstract: 0.35uM STI BiCD 0.13 BCD6 LBC7 BiCD-0 LBC5 LBC7 RONA 0.35Um 0.18um LDMOS
    Text: A Deep Trench Isolation integrated in a 0.13um BiCD process technology for analog power ICs. H. Kitahara, T. Tsukihara, M. Sakai, J. Morioka*, K. Deguchi*, K. Yonemura*, T. Kikuchi*, S. Onoue*, K. Shirai*, K. Watanabe* and K. Kimura*. Toshiba Semiconductor Company, 3500 Matsuoka, Oita, Oita, 870-0197, Japan,


    Original     		PDF 7to30V BCD8 0.35uM STI BiCD 0.13 BCD6 LBC7 BiCD-0 LBC5 LBC7 RONA 0.35Um 0.18um LDMOS

    toshiba emmc 4.4

    Abstract: toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga
    Text: 2008-9 SYSTEM CATALOG Mobile Solutions s e m i c o n d u c t o r h t t p : / / w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Semiconductor Devices for Mobile Applications Mobile communications via cellular phones and PDAs are changing the way we live.


    Original     		PDF SCE0008G E-28831 SCE0008H toshiba emmc 4.4 toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga

    MOSFET TOSHIBA 2SK

    Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK
    Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.


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    transistor 2sk

    Abstract: MOSFET TOSHIBA 2Sj equivalent 2sk2698 mosfet MOSFET TOSHIBA 2SK HIGH POWER MOSFET TOSHIBA equivalent 2sk2837 mosfet TE161 2SK2615 2SK2698 2SK2837
    Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.


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    cx20091 sony IC

    Abstract: FM radio CIRcuit DIAGRAM with TA2003 CX20091 cxa1238 cxa1376 GDT SIEMENS 800 SONY cx20091 FM stereo radio circuit la1140 la1830 MC3363
    Text: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. P61E7.pdf 01.10.17


    Original     		PDF P61E7 P61E-7 cx20091 sony IC FM radio CIRcuit DIAGRAM with TA2003 CX20091 cxa1238 cxa1376 GDT SIEMENS 800 SONY cx20091 FM stereo radio circuit la1140 la1830 MC3363

    LTM15C166

    Abstract: TV toshiba dramatic lq150F1 ltm14c ltm12c324 super amoled pmlcd lq133 LTM12C283 LQ150U1LH21
    Text: FPD Producer Profile Report 5.1 Sharp • History Sharp’s origins can be traced back to the formation of Hayakawa Electric Industry in 1912. Hayakawa Electric was formed by inventor Tokuji Hayakawa, who invented the world’s first mechanical pencil, the Ever-Sharp. He introduced


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    TPD*1039s

    Abstract: TPD7001BF TPD2005F 5252 E 0903 TPD7203 zener diode reference guide highside switch array tpd1008sa TPD1039S tpd2007f
    Text: Intelligent Power Devices PRODUCT GUIDE Power MOSFETs with Built-In Protection Function Outline • This power MOSFET incorporates a protection function using a newly-developed simple process. ● Chip Control Section Power Section ● Construction N-MOS and DMOS process


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    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    induction cooker fault finding diagrams

    Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
    Text: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when


    Original     		PDF Z8115 MIL-HDBK-217E S57-1 induction cooker fault finding diagrams MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200

    thermometer lm324

    Abstract: pin connection o LM324 accelerometer engine speed control lm358 TS92X three stage instrumentation amplifier using lm358 hf2c TL06x motorola LM2902 Smoke Detector Applications Guide MC3403 cross
    Text: DESIGNER’S GUIDE TO SELECTING AND APPLYING RAIL TO RAIL OPERATIONAL AMPLIFIERS Vcc + Output Vcc - Get the full swing with ST Standard Linear Ics w w w. s t . c o m + STMicroelectronics and Rail to Rail Amplifiers Choose your Rail to Rail Op-Amps + How to choose your device among the family of products? Our experience of analog designing


    Original     		PDF OT23-5 TSSOP14 FLRTR/0100 thermometer lm324 pin connection o LM324 accelerometer engine speed control lm358 TS92X three stage instrumentation amplifier using lm358 hf2c TL06x motorola LM2902 Smoke Detector Applications Guide MC3403 cross

    portable dvd player power supply

    Abstract: MAX418 capacitive pressure sensor washing three stage instrumentation amplifier using lm358 MC4558 equivalent pin connection o LM324 accelerometer ta75s51f hf2c TS970 TS974
    Text: DESIGNER’S GUIDE TO SELECTING AND APPLYING RAIL TO RAIL OPERATIONAL AMPLIFIERS Vcc + Output Vcc - Get the full swing with ST Standard Linear Ics w w w. s t . c o m + STMicroelectronics and Rail to Rail Amplifiers Choose your Rail to Rail Op-Amps + How to choose your device among the family of products? Our experience of analog designing


    Original     		PDF TSSOP14 portable dvd player power supply MAX418 capacitive pressure sensor washing three stage instrumentation amplifier using lm358 MC4558 equivalent pin connection o LM324 accelerometer ta75s51f hf2c TS970 TS974

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    toshiba packing label

    Abstract: toshiba tape and reel TOSHIBA ADDC LB1191 T2 marking M-flat LB181 DO-41SS size Joint Sensor Instruments TOSHIBA REEL
    Text: TOSHIBA CMS11 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS11 U nit in mm Switching Mode Power Supply Applications Portable Equipment Battery Applications Forward voltage- VFM = 0.37 V max Average forward current: ip <,\v) = 2.0 A Repetitive peak reverse voltage^ Vrrm = 30 V


    OCR Scan     		PDF CMS11 DO-41 DO-15 DO-15L LC6-15 LC7-15A LC6-20 LC7-20 LC7-20A toshiba packing label toshiba tape and reel TOSHIBA ADDC LB1191 T2 marking M-flat LB181 DO-41SS size Joint Sensor Instruments TOSHIBA REEL

    MG400H1FL1

    Abstract: TOSHIBA Thyristor calculation of IGBT snubber transistor circuit design
    Text: 3.1 GTR Module Ratings The main maximum rating items include the emitter, base and collector currents of tran­ sistors, voltage between terminals, power dissi­ pation, junction temperature, storage tempera­ ture, etc. These characteristics are all closely


    OCR Scan     		PDF

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


    OCR Scan     		PDF 30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor