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    TOSHIBA MG50Q2YS50 Search Results

    TOSHIBA MG50Q2YS50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA MG50Q2YS50 Datasheets Context Search

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    MG50Q2YS50

    Abstract: toshiba mg50q2ys50
    Text: MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode


    Original     		PDF MG50Q2YS50 2-94D4A MG50Q2YS50 toshiba mg50q2ys50

    MG50Q2YS50

    Abstract: No abstract text available
    Text: MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)


    Original     		PDF MG50Q2YS50 2-94D4A MG50Q2YS50

    toshiba mg50q2ys50

    Abstract: MG50Q2YS50 tip 31 power transistor motor dc MG50Q2Y
    Text: TOSHIBA MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG50Q2YS50 2-94D4A toshiba mg50q2ys50 MG50Q2YS50 tip 31 power transistor motor dc MG50Q2Y

    IRF 24N

    Abstract: MG50Q2YS50A 294D
    Text: TOSHIBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load • Low Saturation Voltage : v CE(sat) = 3-e v (Max.)


    OCR Scan     		PDF MG50Q2YS50A 2-94D4A 961001EAA1 10//s IRF 24N MG50Q2YS50A 294D

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG50Q2YS50 TjS125Â 10//s

    tf03

    Abstract: MG50Q2YS50A
    Text: TO SH IBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 ig /iu u u cu v e L/uau


    OCR Scan     		PDF MG50Q2YS50A tf03 MG50Q2YS50A

    mg50q2ys50

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)


    OCR Scan     		PDF MG50Q2YS50 mg50q2ys50

    MG50Q2YS50A

    Abstract: No abstract text available
    Text: TO SH IBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 ig /iu u u cu v e L/uau


    OCR Scan     		PDF MG50Q2YS50A 2-94D4A MG50Q2YS50A

    mg50q2ys50

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E ( s a t ) = 3.6V (Max.)


    OCR Scan     		PDF MG50Q2YS50A 961001EAA1 mg50q2ys50

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Inductive Load • Low Saturation Voltage : v C E(sat) = 3-6Y (Max.)


    OCR Scan     		PDF MG50Q2YS50A 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : t f= 0 .3 /* s Max. @ Inductive Load • Low Satu ration Voltage : V CE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG50Q2YS50 961001EAA2

    G50Q2YS50

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q2YS50A TEN TATIVE TO S H IB A G TR M O D U LE SILICO N IM C H A N N EL IG B T MG50Q2YS50A HIGH PO W ER SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load


    OCR Scan     		PDF MG50Q2YS50A G50Q2YS50A G50Q2YS50