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    TOSHIBA MICROWAVE AMPLIFIER Search Results

    TOSHIBA MICROWAVE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA MICROWAVE AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER TMD1414-02 MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES • Suitable for Ku-band VSAT ■ High Gain GldB=36dB TYP. ■ Broadband Operation f=13.75-14.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25‘C) SYMBOL UNIT


    OCR Scan     		PDF TMD1414-02

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER JS9768-AS CHIP FORM MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ High O utput Power 50 Q Input / O utput Broadband Matched PldB=25.0dBm @ f=24.5-26.5GHz. High Power Gain GldB=13dB SYMBOL UNIT RATINGS DRAIN SUPPLY VOLTAGE


    OCR Scan     		PDF JS9768-AS 0D21544 460mA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain G ldB=13dB at 1.96GHz CHARACTERISTICS SYMBOL


    OCR Scan     		PDF 96GHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER JS9766-AS CHIP FORM MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ High O utput Power 50 Q Input / O utput Broadband Matched PldB=25.0dBm ■ @£=21.2-23.6GHz. High Power Gain GldB=14dB ABSOLUTE MAXIMUM RATINGS(Ta=25°C)


    OCR Scan     		PDF JS9766-AS T0T7247

    k-band amplifier

    Abstract: JS8894-AS
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8894-AS TECHNICAL DATA_ _ _ _ _ _ _ _ _ _ FEATURES: • ■ HIGH POWER PldB = 27.0 dBm at f = 23 GHz HIGH GAIN Gl d B = 6 0 dB at f = 2 3 GHz SUITABLE FOR K BAND AMPLIFIER ION IMPLANTATION CHIP FORM


    OCR Scan     		PDF JS8894-AS 23GHz JS8894-AS k-band amplifier

    cq 531

    Abstract: cq 529 tpm1919 TPM1919-60
    Text: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB


    OCR Scan     		PDF 96GHz 300mA cq 531 cq 529 tpm1919 TPM1919-60

    11175

    Abstract: S8837A
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8837A TECHNICAL DATA FEATURES: • HIGH POWER PjdB = 31 dBm at f — 8 GHz ■ HIGH GAIN G1dB = 7dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF S8837A S8837A 11175

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB


    OCR Scan     		PDF 96GHz 96GHz

    S8835

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8835 TECHNICAL DATA FEATURES: • HIGH POWER P^B = 24 dBm at f = 8 GHz ■ HIGH GAIN G-jjb = 8 dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF S8835 S8835

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER JS9770-AS CHIP FORM MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • 50 O Input / O utput Broadband Matched High O utput Power @ f=27.5 - 29.5GHz. PldB =25.0d B m ■ High Power Gain G ldB =13dB ABSOLUTE MAXIMUM RATINGS(Ta=25°C)


    OCR Scan     		PDF JS9770-AS 1DT7547 440mA 0D2154Q

    S8851

    Abstract: S885T
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8851 TECHNICAL DATA FEATURES: • HIGH POWER P^dB“ 24 dBm at f = 15 GHz ■ ■ HIGH GAIN G1dB = 8 dB ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF S8851 S885T 15GHz S8851 S885T

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8837A-AS TECHNICAL DATA FEATURES : • HIGH POWER = 3 2 dBm at f = 8 GHz HIGH GAIN G1dB = 7 dB at f = 8 GHz ■ SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF JS8837A-AS JS8837A-AS

    S8850A

    Abstract: S8850 Microwave Semiconductor s88
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8850A TECHNICAL DATA FEATURES: • HIGH POWER P^cjB = 21.5dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN G1dB = 9 . ° dB at f = 15 GHz ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF S8850A S885QA S8850A S8850 Microwave Semiconductor s88

    JS8834-AS

    Abstract: S2230
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8834-AS TECHNICAL DATA FEATURES: • MEDIUM POWER SUITABLE FOR C-BAND AMPLIFIER p1dB = 21 dBm at f = 8 GHz ION IMPLANTATION ■ HIGH GAIN G1dB = 9 dB at f = 8 GHz CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF JS8834-AS JS8834-AS S2230

    S8853

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8853 TECHNICAL DATA FEATURES: • ■ HIGH POWER P-jdB = 2 8 dBm at f = 15 GHz HIGH GAIN G1dB = 7 dB at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF S8853 S8853

    GK 087

    Abstract: A1203 SN 46 LS 46 JS8855-AS
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8855-AS TECHNICAL DATA FEATURES: • HIGH POWER p1dB~ 31.5 dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN G1dB = 7dB at f = 15 GH z ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF JS8855-AS 15GHz 18GHz JS8855-AS GK 087 A1203 SN 46 LS 46

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8837A-AS TECHNICAL DATA FEATURES : • HIGH POWER = 3 2 dBm at f = 8 GHz HIGH GAIN G1dB = 7 dB at f = 8 GHz ■ SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF JS8837A-AS JS8837A-AS

    S8855

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8855 TECHNICAL DATA FEATURES: • ■ HIGH POWER p1 d B ~ 31.5 dBm at f = 15 GHz HIGH GAIN G|dB = 6.5 dB at f = 15 GHz SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF S8855 15GHz -S8855- S8855

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8836A-AS TECHNICAL DATA FEATURES: • HIGH POWER PjdB = 29.5 dBm at f = 8 GHz ■ HIGH GAIN G1dß = 7.5 dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF JS8836A-AS JS8836A-AS

    2SC1557

    Abstract: L39C cub vc 150
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO tpwjimm/fmm L 39C 0 0 4 8 9 Ü T ^ 3 / '2 3 - -If O O VHP , L’HP^CATVffl ° Microwave High Power Amplifier Applications ° VHP, II HP Band CATV Applications MAXIMUM RATINGS (Ta =25°C) CHARACTERISE C


    OCR Scan     		PDF 2SC1557 2SC1557 L39C cub vc 150

    toshiba 8893

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8893-AS TECHNICAL DATA FEATURES: • ■ ■ ■ ■ HIGH POWER PidB = 24.0 dBm at f = 23 GHz HIGH GAIN GldB = 6 . 0 dB at f = 2 3 GHz SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF JS8893-AS 893-A 23GHz JS8893-A toshiba 8893

    8853a

    Abstract: No abstract text available
    Text: TOSHIBA I MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8853-AS TECHNICAL DATA FEATURES: • HIGH POWER PldB = 28.0 dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND . I0 N IMPLANTATION ■ HIGH GAIN G|dB = 7-0 dB at f = 15 GHz ■ CHIP FORM AMPLIFIER RF PERFORMANCE SPECIFICATIONS Ta = 2 5 °C


    OCR Scan     		PDF JS8853-AS 18GHz 15GHz 18GHz ELECTRICAL43 8853a

    JS8851-AS

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8851-AS TECHNICAL DATA FEATURES: • ■ HIG H POWER PjdB— 2 4 d B m H IG H GAIN Gu b ^ 8 dB SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION CHIP FORM at f = 15 GHz at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25 C


    OCR Scan     		PDF 24dBm JS8851-AS JS8851 15GHz 18GHz 15GHz JS8851-AS

    Toshiba JS8836A-AS

    Abstract: JS8836A-AS
    Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8836A-AS TECHNICAL DATA FEATURES: • HIGH POWER IdB = 29.5 dBm at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION HIGH GAIN G1dB = 7 5 dB at f = 8 GHz CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° Ci


    OCR Scan     		PDF JS8836A-AS Bre084 JS8836A-AS Toshiba JS8836A-AS