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    TOSHIBA NOTE MARKING Search Results

    TOSHIBA NOTE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA NOTE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


    Original     		PDF 2SK2854

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


    Original     		PDF 2SK3074 630mW

    Untitled

    Abstract: No abstract text available
    Text: TCS11SLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11SLU Digital Output Magnetic Sensor Features Open-Drain Output with Inverted Logic South-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


    Original     		PDF TCS11SLU

    Untitled

    Abstract: No abstract text available
    Text: TCS11NLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11NLU Digital Output Magnetic Sensor Features Open-Drain Output with Inverted Logic North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


    Original     		PDF TCS11NLU

    Untitled

    Abstract: No abstract text available
    Text: TCS11NLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11NLU Digital Output Magnetic Sensor Features Open-Drain Output with Inverted Logic North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


    Original     		PDF TCS11NLU

    Untitled

    Abstract: No abstract text available
    Text: TCS10NPU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10NPU Digital-Output Magnetic Sensor Feature Push-Pull Output North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2) 5 4 PA2 Function Table


    Original     		PDF TCS10NPU

    TCS10DPU

    Abstract: No abstract text available
    Text: TCS10DPU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10DPU Digital Output Magnetic Sensor Feature Push-Pull Output South-Pole or North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2) 5


    Original     		PDF TCS10DPU TCS10DPU

    Untitled

    Abstract: No abstract text available
    Text: TCS10DPU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10DPU Digital Output Magnetic Sensor Feature Push-Pull Output South-Pole or North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2) 5


    Original     		PDF TCS10DPU

    Untitled

    Abstract: No abstract text available
    Text: TCS10NPU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10NPU Digital-Output Magnetic Sensor Feature Push-Pull Output North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2) 5 4 PA2 1 VOUT


    Original     		PDF TCS10NPU

    Untitled

    Abstract: No abstract text available
    Text: TCS11DLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11DLU Digital Output Magnetic Sensor Feature Open-Drain Output with Inverted Logic South-Pole or North-pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


    Original     		PDF TCS11DLU

    Untitled

    Abstract: No abstract text available
    Text: RFM04U6P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM04U6P VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		PDF RFM04U6P

    Untitled

    Abstract: No abstract text available
    Text: 2SK3079A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF 2SK3079A 50dBmW

    Untitled

    Abstract: No abstract text available
    Text: RFM00U7U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM00U7U VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		PDF RFM00U7U

    RFM01U7p

    Abstract: No abstract text available
    Text: RFM01U7P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM01U7P VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		PDF RFM01U7P RFM01U7p

    Untitled

    Abstract: No abstract text available
    Text: RFM03U3CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM03U3CT VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF RFM03U3CT

    FIELD EFFECT TRANSISTOR

    Abstract: No abstract text available
    Text: RFM07U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM07U7X VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF RFM07U7X 530MHz FIELD EFFECT TRANSISTOR

    RFM08U9X

    Abstract: No abstract text available
    Text: RFM08U9X TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RFM08U9X RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF RFM08U9X RFM08U9X

    Untitled

    Abstract: No abstract text available
    Text: TPC6201 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U — MOSII TPC6201 PRELIMINARY LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS INDUSTRIAL APPLICATIONS UNITrmm APPLICATIONS •Low Drain - Source ON Resistance : R D s (o n ) =


    OCR Scan     		PDF TPC6201 VDD--15V

    TPC8204

    Abstract: No abstract text available
    Text: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8. Low Drain-Source ON Resistance : RßS (ON) = 16


    OCR Scan     		PDF TPC8204 TPC8204

    tpc8204

    Abstract: No abstract text available
    Text: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8. Low Drain-Source ON Resistance : RßS (ON) = 16


    OCR Scan     		PDF TPC8204 tpc8204

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8005-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH SPEED U-MOS TPC8005-H HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS


    OCR Scan     		PDF TPC8005-H 10//A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8203 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M O SII TPC8203 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS bUK-ö 8 Low Drain-Source ON Resistance


    OCR Scan     		PDF TPC8203

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 LITHIUM ION BATTERY NOTE BOOK PC INDUSTRIAL APPLICATIONS Unit in mm PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S (ON)= 41mfi (Typ.)


    OCR Scan     		PDF TPC8202 41mfi 10//A 200//A)

    TPC8003

    Abstract: No abstract text available
    Text: TOSHIBA TPC8003 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SÏÏ TPC8003 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS Supplied in Compact and Thin Package Requires Only a Small M ounting Area.


    OCR Scan     		PDF TPC8003 TPC8003