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    TOSHIBA PNP RN Search Results

    TOSHIBA PNP RN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA PNP RN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2301-RN2306 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2301, RN2302, RN2303 RN2304, RN2305, RN2306 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS With Built-in Bias Resistors Simplify Circuit Design


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    PDF RN2301-RN2306 RN2301, RN2302, RN2303 RN2304, RN2305, RN2306 RN1301 RN2301 RN2302

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2114-RN2118 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2114, RN2115, RN2116, RN2117, RN2118 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 1.6+0.2 • With Built-in Bias Resistors •


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    PDF RN2114-RN2118 RN2114, RN2115, RN2116, RN2117, RN2118 RN1114-- -RN1118 RN2114 RN2115

    Untitled

    Abstract: No abstract text available
    Text: RN2110,RN2111 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2110, RN2111 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 1.6 ±0.2 AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design


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    PDF RN2110 RN2111 RN2110, RN1110, RN1111

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2001-RN2006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors


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    PDF RN2001-RN2006 RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 RN1001 RN1006 RN2001

    nj TRANSISTOR

    Abstract: No abstract text available
    Text: TOSHIBA RN2107F-RN2109F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107F, RN2108F, RN2109F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors


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    PDF RN2107F-RN2109F RN2107F, RN2108F, RN2109F RN1107F RN1109F RN2107F RN2108F RN2107F-2109F nj TRANSISTOR

    RN4605

    Abstract: No abstract text available
    Text: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 -


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    PDF RN4605 RN4605

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2421-RN2427 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (M ax.)= _ 800mA)


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    PDF RN2421-RN2427 RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 800mA) RN1421

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2407,RN2408,RN2409 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2407, RN2408, RN2409 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS + 0.5 • With Built-in Bias Resistors • Simplify Circuit Design


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    PDF RN2407 RN2408 RN2409 RN2407, RN2408, RN2409 RN1407

    RN2223

    Abstract: ko iq
    Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)


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    PDF RN2221-RN2227 RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 --800mA) RN1221 RN2223 ko iq

    RN4603

    Abstract: No abstract text available
    Text: TOSHIBA RN4603 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4603 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 1.6-0.1 + 0.2 • • • •


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    PDF RN4603 RN4603

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2701 ~RN2706 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2701, RN2702, RN2703, RN2704, RN2705, RN2706 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (U ltra Super Mini Type with. 5


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    PDF RN2701 RN2706 RN2701, RN2702, RN2703, RN2704, RN2705, RN2701 RN2702

    transistor 2204

    Abstract: No abstract text available
    Text: TOSHIBA RN2201-RN2206 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors


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    PDF RN2201-RN2206 RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 RN1201 RN1206 RN2201 transistor 2204

    TRANSISTOR MARKING YB

    Abstract: RN2901 RN2902 RN2903 RN2904 RN2905 RN2906 TRANSISTOR MARKING TE US6
    Text: TOSHIBA RN2901-RN2906 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2901, RN2902, RN2903, RN2904, RN2905, RN2906 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with 6 leads)


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    PDF RN2901-RN2906 RN2901, RN2902, RN2903, RN2904, RN2905, RN2906 RN1901-RN1906 RN2901 RN2902 TRANSISTOR MARKING YB RN2903 RN2904 RN2905 RN2906 TRANSISTOR MARKING TE US6

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2010,RN2011 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2010, RN2011 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 5.1 M AX. • • • • With Built-in Bias Resistors Simplify Circuit Design


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    PDF RN2010 RN2011 RN2010, RN1010, RN1011

    YC 2604

    Abstract: toshiba Yb YC+2604
    Text: TOSHIBA RN2601 ~RN2606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2601, RN2602, RN2603, RN2604, RN2605, RN2606 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)


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    PDF RN2601 RN2606 RN2601, RN2602, RN2603, RN2604, RN2605, RN1601 RN1606 YC 2604 toshiba Yb YC+2604

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • W ith Bu ilt- in B ia s Resistors


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    PDF RN2401 RN2402 RN2403 RN2404 RN2405 RN2406 RN2401, RN2402, RN2403 RN2404,

    toshiba pnp rn

    Abstract: RN2314-RN2318
    Text: RN2314-RN2318 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2314, RN2315, RN2316, RN2317, RN2318 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 2.1 + 0 1 .1.25+0.1 • W ith Built-in Bias Resistors


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    PDF RN2314-RN2318 RN2314, RN2315, RN2316, RN2317, RN2318 RN1314 RN1318 RN2314 RN2315 toshiba pnp rn RN2314-RN2318

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •


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    PDF RN4610 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4986 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 (Ultra Super Mini Type


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    PDF RN4986

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4985 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • 2.1 • Including Two Devices in US6 (Ultra Super Mini Type


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    PDF RN4985

    LM 1709

    Abstract: No abstract text available
    Text: TOSHIBA RN2707-RN2709 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2707, RN2708, RN2709 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1 .2 5 1 0 .1 -m- » 1 - 1— • t !


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    PDF RN2707-RN2709 RN2707, RN2708, RN2709 RN2707 RN2708 LM 1709

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2307-RN2309 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2307, RN2308, RN2309 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 2.1 ¿ 0.1 • • • • 1.25±0.1 With Built-in Bias Resistors


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    PDF RN2307-RN2309 RN2307, RN2308, RN2309 RN1307 RN2307 RN2308 SC-70

    2607 transistor

    Abstract: 26-07 transistor 2609 N2609
    Text: TOSHIBA R N 2607-R N 2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)


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    PDF 2607-R RN2607, RN2608, RN2609 RN1607--RN1609 RN2607 RN2608 2607 transistor 26-07 transistor 2609 N2609

    RN25U

    Abstract: No abstract text available
    Text: TOSHIBA RN2501-RN2506 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2501, RN2502, RN2503, RN2504, RN2505, RN2506 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm Including Two Devices in SMV (Super Mini Type with 5 leads)


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    PDF RN2501-RN2506 RN2501, RN2502, RN2503, RN2504, RN2505, RN2506 RN1501-RN1506 RN2501 RN2502 RN25U