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    TOSHIBA TC140G Search Results

    TOSHIBA TC140G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TC140G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tc140g

    Abstract: TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18
    Text: *1A’ li ' 'S/Si _ TOSHIBA 1t TOSHIBA AMERICA ELECTRONIC COMPOMEWTS, IIMC 1.0 micron TC140G CMOS Gate Array Features Description • Process: 1.0 micron drawn HC2MOS Si-gate double layer metal Raw gates: 2K to 172K Usable gates: up to 68K Gate speed: 0.4ns 2-input NAND gate, fanout - 2, tpd.


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    TC140G 167th MAS-0097/3-92 TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ‘ arsai "<ÖS TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. TC160G/160E CMOS Gate Array/Embedded Array 0.8 micron Description Features The TC160G and TC160E with embedded functions series of 0.8 micron gate arrays has a 300ps gate speed and up to 21 OK* usable gates. These members of the DSA family


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    TC160G/160E TC160G TC160E 300ps 300ps MAS-0152/3-92 PDF

    TC150GC8

    Abstract: TC150GH2 toshiba tc110g TC140G toshiba tc140g TC110G TC150G89 toshiba toggle nand tc120g
    Text: TOSHIBA TOSHIBA. A M E R IC A ELECTRONIC C O M PO N E N TS , IIMC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 100K useable gates— one of the highest in the industry.


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    TC150GCMOS TC150G TC110G, TC120G TC140G wo220 MAS-0062/3-90 TC150GC8 TC150GH2 toshiba tc110g toshiba tc140g TC110G TC150G89 toshiba toggle nand PDF

    TC140G44

    Abstract: TC140G27 toshiba tc140g
    Text: TOSHIBA TO SH IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. 1.0 micron TC140G CMOS Gate Array Description Features The TC140G series of 1.0 micron gate arrays has a 0.4ns gate speed and up to 172K raw gates. — Provides a 35% reduction in delay times compared to


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    TC140G MAS-0097/3-90 TC140G44 TC140G27 toshiba tc140g PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N TS , INC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 10OK useable gates—one of the highest in the industry.


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    TC150G TC110G, TC120G TC140G MAS-0062/3-90 PDF

    74HC inverter tri-state output

    Abstract: TC140G toshiba tc110g TC14L010 74HC buffer tri-state output bt12 74hc* open drain buffer FP144 TC11L003 TC110G
    Text: TOSHIBA ASIC TO SH IB A A M ER ICA E LE C T R O N IC CO M PO N EN TS, INC. IEC 1 4 1990 TC11L CMOS Gate Array TC14L CMOS Gate Array These tw o gate array fam ilies provide a unique solution for designs which have a high ratio of pin count to gates. T oshiba’s optim ized assem bly tech n o lo g y allow s the use of


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    TC11L TC14L 64-bit MAS-0095/9-90 74HC inverter tri-state output TC140G toshiba tc110g TC14L010 74HC buffer tri-state output bt12 74hc* open drain buffer FP144 TC11L003 TC110G PDF

    2SKI34

    Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
    Text: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t


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    J22587 90-3D 2SKI34 TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576 PDF

    HC165A

    Abstract: TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A
    Text: MOS Industrial ICs AD Converter - je Conversion Resolution Time Type No. Conversion Mode Input Channel TC5090AP 8b it 2ms Integration method 1 TC5091AP Bbit 2ms " 6 TC5092AP 13bit 8.2ms ’ 8 TC5093AP 8b it 50ps Successive approximation 8 Output Formst


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    TC5090AP TC5091AP TC5092AP TC5093AP TC35094P TC35095AP/AF TC35096AP/AF TC35097AP TC35098AP TC35080P HC165A TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A PDF

    toshiba tc110g

    Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
    Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective


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    74LS82

    Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
    Text: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte­ grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p­


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    74ls82

    Abstract: 74245 BIDIRECTIONAL BUFFER IC 74ls150 ph 4531 diode 4583 dual schmitt trigger ic D flip flop 7474 74245 BUFFER IC ic 7483 BCD adder data sheet ic 74139 Quad 2 input nand gate cd 4093
    Text: General Features The SCxD4 series of high perform ance CM O S gate arrays offers the user the ability to realise custom ised VLSI inte­ grated circuits featuring the speed perform ance previously obtainable only with bipo lar tech nolog ies whilst retaining all


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