toshiba marking code transistor
Abstract: Audio Power Amplifier TOSHIBA TOSHIBA NOTE TOSHIBA Transistor 2SC5199 2-21F1A 2SA1942 2SC5199
Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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2SA1942
2SC5199
toshiba marking code transistor
Audio Power Amplifier TOSHIBA
TOSHIBA NOTE
TOSHIBA Transistor 2SC5199
2-21F1A
2SA1942
2SC5199
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2-21F1A
Abstract: 2SA1942 2SC5199
Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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2SA1942
2SC5199
2-21F1A
2SA1942
2SC5199
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2-21F1A
Abstract: 2SA1942 2SC5199
Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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2SA1942
2SC5199
2-21F1A
2SA1942
2SC5199
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Untitled
Abstract: No abstract text available
Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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2SA1942
2SC5199
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Untitled
Abstract: No abstract text available
Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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2SA1942
2SC5199
2-21F1A
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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2SA1942
2SC5199
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2SC5199
Abstract: 2-21F1A 2SA1942
Text: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.
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2SC5199
2SA1942
2SC5199
2-21F1A
2SA1942
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Untitled
Abstract: No abstract text available
Text: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.
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2SC5199
2SA1942
2-21F1A
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2SC5199
Abstract: 2-21F1A 2SA1942
Text: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.
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2SC5199
2SA1942
2SC5199
2-21F1A
2SA1942
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SMD TRANSISTOR H2A NPN
Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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BCE0016F
2SA1941 amp circuit
2SC3303
2SD880
TO3P package
2SA114
smd transistor h2a
2sb834
amplifier circuit using 2sa1943 and 2sc5200
TOSHIBA BIPOLAR POWER TRANSISTOR
amplifier design tta1943
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2sC5200, 2SA1943
Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current
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BCE0016D
2sC5200, 2SA1943
2SA1941 equivalent
2SC5353 equivalent
2sc5198 equivalent
amplifier circuit using 2sa1943 and 2sc5200
2SC2383 equivalent
tpcp8l01
2SA1962 equivalent
2SC4793 2sa1837
2sA1013 equivalent
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Untitled
Abstract: No abstract text available
Text: 2SC5199 TOSHIBA 2 S C 5 1 99 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • J Ì3 .3 + 0 .2 - Complementary to 2SA1942 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.
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2SC5199
2SA1942
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Untitled
Abstract: No abstract text available
Text: 2SC5199 TOSHIBA 2 S C 5 1 99 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm y>3.3 + 0.2 • • Complementary to 2SA1942 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. Í— — »! o <=[ '
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2SC5199
2SA1942
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1942 2 S A 1 942 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm ¡¡3.3 ±0.2 • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 3=^—1 M A X IM U M RATINGS Ta = 25°C
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2SA1942
2SC5199
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5199 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE j <;r < 51 QQ POWER AMPLIFIER APPLICATIONS. Unit in mm .3 + 0.2 20.5 M AX nnmn1pmf»nf»T*T7 fn 9.SA1QA9. Recommend for 80W High Fidelity Audio Frequency Amplifier O n t n n t Stn crp M A X IM U M R A T I N A Tx = '>S,°n
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2SC5199
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2-21F1A
Abstract: 2SA1942 2SC5199
Text: 2SC5199 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm • Complementary to 2SA1942 • Recommend for 80 W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C
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2SC5199
2SA1942
2-21F1A
2SA1942
2SC5199
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2SC5199
Abstract: 2-21F1A 2SA1942 TOSHIBA Transistor 2SC5199
Text: 2SC5199 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm • Complementary to 2SA1942 • Recommend for 80 W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C
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2SC5199
2SA1942
2SC5199
2-21F1A
2SA1942
TOSHIBA Transistor 2SC5199
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A1942
Abstract: 2-21F1A 2SA1942 2SC5199
Text: 2SA1942 TO SH IBA 2 S A 1 942 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Complementary to 2SC5199 Recommend for 80 W High Fidelity Audio Frequency Amplifier Oiitmit Sts fp. — x o - - MAXIMUM RATINGS Tc = 25°C
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2SA1942
2SC5199
A1942
2-21F1A
2SA1942
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A1942
Abstract: 80W TRANSISTOR AUDIO AMPLIFIER 2-21F1A 2SA1942 2SC5199
Text: 2SA1942 TO SHIBA 2 S A 1 942 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 43.3 ±0.2 20.5MAX. • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. E P “ o f
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2SA1942
2SC5199
A1942
80W TRANSISTOR AUDIO AMPLIFIER
2-21F1A
2SA1942
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Untitled
Abstract: No abstract text available
Text: 2SA1942 TOSHIBA 2 S A 1 942 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C
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2SA1942
2SC5199
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC5199 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 POWER AMPLIFIER APPLICATIONS. U nit in mm .3 + 0.2 20.5MAX • Complementary to 2SA1942 • Recommend for 80W High Fidelity Audio Frequency Amplifier O utput Stage. MAXIMUM RATINGS Ta = 25°C
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2SC5199
2SA1942
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Untitled
Abstract: No abstract text available
Text: 2SA1942 T O SH IB A 2 S A 1 942 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm .3 + 0.2 20.5M A X • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C
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2SA1942
2SC5199
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A1942
Abstract: 2-21F1A 2SA1942 2SC5199
Text: 2SA1942 TOSHIBA 2 S A 1 942 T O S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS • • SILICON PNP TRIPLE DIFFUSED TYPE Complementary to 2SC5199 Recommend for 80 W High Fidelity Audio Frequency Amplifier Oiitmit Sts fp. — x o - - M A X IM U M RATINGS Ta = 25°C
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2SA1942
2SC5199
000707EAA2'
A1942
2-21F1A
2SA1942
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