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    TOSHIBA TRANSISTOR C5716 Search Results

    TOSHIBA TRANSISTOR C5716 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TRANSISTOR C5716 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C5716

    Abstract: TOSHIBA Transistor c5716 2SC5716 2-16E3A
    Text: 2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Color TV • High voltage: VCBO = 1700 V • High speed: tf 2 = 0.2 µs (typ.) • Collector metal (fin) is fully covered with mold resin.


    Original     		2SC5716 C5716 TOSHIBA Transistor c5716 2SC5716 2-16E3A PDF

    C5716

    Abstract: TOSHIBA Transistor c5716
    Text: 2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Color TV • High voltage: VCBO = 1700 V • High speed: tf 2 = 0.2 µs (typ.) • Collector metal (fin) is fully covered with mold resin.


    Original     		2SC5716 2-16E3A C5716 TOSHIBA Transistor c5716 PDF