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    TOSHIBA TRANSISTOR SILICON PCT Search Results

    TOSHIBA TRANSISTOR SILICON PCT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TRANSISTOR SILICON PCT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RN1101ACT

    Abstract: RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN1106ACT RN2101ACT RN2106ACT
    Text: RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    RN1101ACT RN1106ACT RN1101ACT RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN2101ACT RN2106ACT RN1103ACT RN1106ACT RN2106ACT PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    RN2101CT RN2106CT RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN1101CT RN1106CT PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107CT, RN1108CT, RN1109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications


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    RN1107CT RN1109CT RN1107CT, RN1108CT, RN2107CT RN2109CT RN1108CT PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101ACT, RN1102ACT, RN1103ACT RN1104ACT, RN1105ACT, RN1106ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    RN1101ACT RN1106ACT RN1101ACT, RN1102ACT, RN1103ACT RN1104ACT, RN1105ACT, RN2101ACT RN2106ACT PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    RN1101ACT RN1106ACT RN1101ACT RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN2101ACT RN2106ACT PDF

    RN1101ACT

    Abstract: RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN1106ACT RN2101ACT RN2106ACT
    Text: RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    RN1101ACT RN1106ACT RN1101ACT RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN2101ACT RN2106ACT RN1103ACT RN1106ACT RN2106ACT PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1101CT ~ RN1106CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101CT, RN1102CT, RN1103CT RN1104CT, RN1105CT, RN1106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    RN1101CT RN1106CT RN1101CT, RN1102CT, RN1103CT RN1104CT, RN1105CT, RN2101CT RN2106CT PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT, RN2108CT, RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications


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    RN2107CT RN2109CT RN2107CT, RN2108CT, RN1107CT RN1109CT PDF

    RN2112ACT

    Abstract: RN2113ACT
    Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


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    RN2112ACT RN2113ACT RN1112CT, RN1113CT RN2113ACT PDF

    RN1101ACT

    Abstract: RN1106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN2106ACT 1D43
    Text: RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications


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    RN2101ACT RN2106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN1101ACT RN1106ACT RN1106ACT RN2103ACT RN2106ACT 1D43 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT, RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


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    RN2112ACT RN2113ACT RN2112ACT, RN1112CT, RN1113CT PDF

    RN4605

    Abstract: No abstract text available
    Text: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 -


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    RN4605 RN4605 PDF

    RN4603

    Abstract: No abstract text available
    Text: TOSHIBA RN4603 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4603 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 1.6-0.1 + 0.2 • • • •


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    RN4603 RN4603 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •


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    RN4610 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4985 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • 2.1 • Including Two Devices in US6 (Ultra Super Mini Type


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    RN4985 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4988 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 • Including Two Devices in US6 (U ltra Super Mini Type


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    RN4988 PDF

    RN4610

    Abstract: No abstract text available
    Text: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •


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    RN4610 RN4610 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4991 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) R N AQQ1 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 2.1 ±0.1 • Including Two Devices in US6 (Ultra Super Mini Type


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    RN4991 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4984 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 (U ltra Super Mini Type


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    RN4984 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4990 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RMlQOn SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ±0.1 • Including Two Devices in US6 (U ltra Super Mini Type


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    RN4990 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4602 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N I R I ) ? SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm + 0.2 2 .8 -0 .3 + 0.2 1 .6 - 0.1


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    RN4602 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N a f i n Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 + 0.2 1. 6 - 0.1 3- •


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    RN4605 47ktt PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4981 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ±0.1 • Including Two Devices in US6 (U ltra Super Mini Type


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    RN4981 PDF

    transistor wr2

    Abstract: No abstract text available
    Text: TOSHIBA RN4606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A fi fl f i Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 .8 + 0.2 - 0.3 + 0.2 1 . 6 - 0.1


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    RN4606 961001EAA2' transistor wr2 PDF