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    TOSHIBA ZENER Search Results

    TOSHIBA ZENER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA ZENER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IGBT K 40 T 1202

    Abstract: No abstract text available
    Text: TOSHIBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 7 Unit in mm TOSHIBA TF1207 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.


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    TF1207 TF1207 IGBT K 40 T 1202 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TF1208 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 ? fl R Unit in mm ÏÏTOT- TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver


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    TF1208 TF1208 0/16m PDF

    fll50

    Abstract: No abstract text available
    Text: TOSHIBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 1 fl 7 Unit in mm ÏÏTOT- TOSHIBA TF1207 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.


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    TF1207 TF1207 VCC-15V RL-200U fll50 PDF

    200H

    Abstract: TF1208
    Text: TOSHIBA TF1208 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 8 TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability


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    TF1208 TF1208 200H PDF

    IGBT K 40 T 1202

    Abstract: 40 t 1202 igbt
    Text: TOSHIBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 ? fl f i TOSHIBA TF1206 is the IGBT gate driver designed for use U nit in mm ÏÏTOT- with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver


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    TF1206 TF1206 10-42A1A IGBT K 40 T 1202 40 t 1202 igbt PDF

    40 t 1202 igbt

    Abstract: JTS 4PIN 1042a1
    Text: TOSHIBA TF1205 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 1 f l ^ Unit in mm ÏÏTOT- TOSHIBA TF1205 is the IGBT gate driver designed fo r use w ith TOSHIBA Insulated Gate Bipolar Transistor M odule and it includes the optical isolator and IGBT gate driver


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    TF1205 TF1205 40 t 1202 igbt JTS 4PIN 1042a1 PDF

    tb31224cf

    Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
    Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future


    Original
    SCE0007A tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52 PDF

    Untitled

    Abstract: No abstract text available
    Text: TF1208 TOSHIBA TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 8 Unit in mm TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability


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    TF1208 TF1208 0/16mA 200ii PDF

    zener diode T 5z27

    Abstract: toshiba zener 5Z27 5Z30 3-10B1A
    Text: TOSHIBA 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27, 5Z30 POWER SURGE SUPPRESSOR Unit in mm -designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over-voltage conditions. , / .


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    961001EAA2' zener diode T 5z27 toshiba zener 5Z27 5Z30 3-10B1A PDF

    20M diode zener

    Abstract: MARKING LY toshiba U02Z300 U02Z300-X U02Z300-Y U02Z300-Z TOSHIBA DIODE GLASS
    Text: TOSHIBA U02Z300 TOSHIBA DIODE CONSTANT VOLTAGE REGULATION SILICON DIFFUSED JUNCTION TYPE ZENER DIODE U02Z300 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL p* Tj Tstg RATING 200


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    U02Z300 t-10ms 20M diode zener MARKING LY toshiba U02Z300 U02Z300-X U02Z300-Y U02Z300-Z TOSHIBA DIODE GLASS PDF

    TA78L008AP

    Abstract: TA78L005 TA78L005AP TA78L012AP N22V TA78L006AP TA78L007AP TA78L009AP TA78L010AP TA78L075AP
    Text: TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78L005AP, TA78L006AP, TA78L007AP, TA78L075AP TA78L008AP, TA78L009AP, TA78L010AP, TA78L012AP TA78L132AP, TA78L015AP, TA78L018AP, TA78L020AP, TA78L024AP


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    TA78L005 TA78L005AP, TA78L006AP, TA78L007AP, TA78L075AP TA78L008AP, TA78L009AP, TA78L010AP, TA78L012AP TA78L132AP, TA78L008AP TA78L005AP N22V TA78L006AP TA78L007AP TA78L009AP TA78L010AP PDF

    Zener IT 243

    Abstract: 3Z47 zener toshiba 3z47 diode 3Z12-3Z390 toshiba zener
    Text: 3Z12-3Z390 TOSHIBA TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 371?~373Q fl Unit in mm VOLTAGE DETECTOR AND SUPPRESSOR APPLICATIONS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package P = 3W


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    3Z12-3Z390 DO-201AD 961001EAA2 3Z12-3Z51) 3Z68-3Z90) Zener IT 243 3Z47 zener toshiba 3z47 diode 3Z12-3Z390 toshiba zener PDF

    transistor TA78L

    Abstract: TA78L TA78L008AP IC TA78L
    Text: TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78L005AP, TA78L006AP, TA78L007AP, TA78L075AP TA78L008AP, TA78L009AP, TA78L010AP, TA78L012AP TA78L132AP, TA78L015AP, TA78L018AP, TA78L020AP, TA78L024AP


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    TA78L TA78L005AP, TA78L006AP, TA78L007AP, TA78L075AP TA78L008AP, TA78L009AP, TA78L010AP, TA78L012AP TA78L132AP, transistor TA78L TA78L008AP IC TA78L PDF

    3Z27 DIODE

    Abstract: 3Z12 3Z27 3Z68 3Z200 3Z47 3Z110 3Z36 rd 3z27 3Z13
    Text: 3Z12-3Z390 TOSHIBA TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 3Z12-3Z390 Unit in mm VOLTAGE DETECTOR AN D SUPPRESSOR APPLICATIONS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package -o - P = 3W


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    3Z12-3Z390 D0-201AD 961001EAA2 3Z27 DIODE 3Z12 3Z27 3Z68 3Z200 3Z47 3Z110 3Z36 rd 3z27 3Z13 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA U1ZB6.8-U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8-U1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION. p3 TRANSIENT SUPPRESSORS. • • • + Average Power Dissipation : P = 1.0 W Zener Voltage : Vz = 6.8~390 V Surface Mounting Plastic Mold Package


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    8-U1ZB390 1ZB390 PDF

    2SC2982

    Abstract: 02CZ24 TA8313 TA8313F
    Text: TOSHIBA TENTATIVE TA8313F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA8313F LED DRIVER FOR CAMERA TA8313F is Multi Chip IC incorporates 4 low saturation discrete transistors and one Zener Diode. This IC is suitable for a camera use LED drive


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    TA8313F TA8313 TA8313F 02CZ24 980910EBA2 SSOP16-P-225-1 2SC2982 02CZ24 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA U5ZA27 Z ,U5ZA27C TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE U5ZA27ÍZ), U5ZA27C Unit in mm BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM : ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES ELECTRONIC SYSTEM FOR COMMERCIAL USE ELECTRONIC SYSTEM FOR INDUSTRIAL USE


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    U5ZA27 U5ZA27C 961001EAA2' PDF

    120V ZENER

    Abstract: 1ZC12 1ZC120 1ZC12-1ZC120 1ZC13 1ZC15 1ZC16 1ZC18 1ZC20 1ZC22
    Text: TOSHIBA 1ZC12-1ZC120 TENTATIVE TOSHIBA ZENER DIODE SILICON DIFFUSE TYPE 1ZC12-1ZC120 Unit in mm CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES 6 Average Power Dissipation : P = 1.0 W Zener Voltage : VZ = 12- 120 V Tolerance of Zener Voltage Vg : ±10%


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    1ZC12-1ZC120 1ZC120) 961001EAA2 1ZC36 1ZC39 1ZC43 1ZC47 1ZC51 1ZC56 120V ZENER 1ZC12 1ZC120 1ZC12-1ZC120 1ZC13 1ZC15 1ZC16 1ZC18 1ZC20 1ZC22 PDF

    TF1207

    Abstract: No abstract text available
    Text: TO SH IBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 7 TOSHIBA TF1207 is the IGBT gate driver designed for use U n it in mm with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.


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    TF1207 TF1207 PDF

    l24SB

    Abstract: ta7555 ta78r TA78M05 TA78M05SB TA78M06SB TA78M08SB TA78M09SB 105SB TA78M12SB
    Text: TOSHIBA TA78M05,06,08~10,12,15,18,20,24SB TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78M05SB, TA78M06SB, TA78M08SB, TA78M09SB, TA78M10SB TA78M12SB, TA78M15SB, TA78M18SB, TA78M20SB, TA78M24SB 0.5A THREE TERMINAL POSITIVE VOLTAGE REGULATORS


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    TA78M05 TA78M05SB, TA78M06SB, TA78M08SB, TA78M09SB, TA78M10SB TA78M12SB, TA78M15SB, TA78M18SB, TA78M20SB, l24SB ta7555 ta78r TA78M05SB TA78M06SB TA78M08SB TA78M09SB 105SB TA78M12SB PDF

    ZENER DIODE J3

    Abstract: 1SZ57-1SZ59 ZENER C 3V zener diode marking 5d zener diode T3 Marking zener diode mark J3 1SZ57 1SZ57 diode diode j5d zener diode T3
    Text: W7 TOSHIBA {D IS CRET E/ OP TO } ÍmTI^O^SSO □ 9097250 TOSHIBA DISCRETE/OPTO 1SZ571SZ59 67C 09381 3 7 D Silicon Planar Type Tem perature Compensated Zener Diode INDUSTRIAL APPLICATIONS Unit in mm VOLTAGE REGULATION AND VOLTAGE STANDARD APPLICATIONS.


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    1SZ57--1SZ59 1SZ59) 1SZ58 1SZ59 ZENER DIODE J3 1SZ57-1SZ59 ZENER C 3V zener diode marking 5d zener diode T3 Marking zener diode mark J3 1SZ57 1SZ57 diode diode j5d zener diode T3 PDF

    DF2S12FU

    Abstract: No abstract text available
    Text: TOSHIBA DF2S12FU TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE DF2S12FU DIODES FOR PROTECTING AGAINST ESD • • • Two-pin ultra-small packages are suitable for higher mounting densities. Small Total Capacitance : Cx = 15 pF Typ. Zener Voltage correspond to E24 Series.


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    DF2S12FU DF2S12FU PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA DF2S12FU TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE DF2S12FU DIODES FOR PROTECTING AGAINST ESD • • • Two-pin ultra-small packages are suitable for higher mounting densities. Small Total Capacitance : Ct = 15 pF Typ. Zener Voltage correspond to E24 Series.


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    DF2S12FU PDF

    TF1206

    Abstract: 200H
    Text: TO SH IBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 6 TOSHIBA TF1206 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability


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    TF1206 TF1206 200H PDF