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    Text: ¿57 S G S -T H O M S O N ¡m e ra « S T P 20 N06 s t p 2 0 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP20N06 S TP20N06FI V dss RDS on Id 60 V 60 V < 0 .085 Q. < 0 .085 Q. 20 A 13 A • TYPICAL RDS(on) = 0.06 Q . . AVALANCHE RUGGED TECHNOLOGY


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    PDF STP20N06 TP20N06FI STP20N06/FI ISQWATT220