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    Text: STP5N 30L S TP5N30LFI V dss RDS on 300 V 300 V E D ED TYP E N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR A A ¿57 STP5N30L S T P 5 N 3 0 LFI S G S -T H O M S O N ¡m e ra « Id 5 A 3.5 A . TYPICAL RDs(on) = 1.25 Q . . AVALANCHE RUGGED TECHNOLOGY


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    PDF TP5N30LFI STP5N30L STP5N30L/FI ISQWATT220