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    Motorola Semiconductor Products MTP6N60E

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    TP6N60E Datasheets Context Search

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    TP6N60

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP6N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP6N60E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n


    OCR Scan     		PDF MTP6N60E/D TP6N60E 21A-09 TP6N60

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    6N60E

    Abstract: p6n60e TP6N60E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 6N 60E TM O S E -F E T ™ P o w er Field E ffe c t T ran sistor M otorola P referred Device N-Channel Enhancement-Mode Silicon G te TMOS POWER FET 6.0 AMPERES 600 VOLTS ^DS on * 1.2 OHMS


    OCR Scan     		PDF MTP6N60E 6N60E p6n60e TP6N60E