1C12
Abstract: 1300nm TPA photodiode photo diode array InGaAs TPA-1C12 PIN 1300nm
Text: TPA-1C12 InGaAs PIN photodiode Array FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Surface reflectivity 2 Responsivity uniformity Dark Current
|
Original
|
PDF
|
TPA-1C12
1300nm
1300nm
1E-10
1E-11
1E-12
1E-13
250x250
1C12
TPA photodiode
photo diode array InGaAs
TPA-1C12
PIN 1300nm
|
TPA-8D12-001
Abstract: No abstract text available
Text: TPA-8D12-001 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.50 0.55 1.0 9.0 0.6 0.8 Responsivity 1 Dark Current
|
Original
|
PDF
|
TPA-8D12-001
850nm
1E-10
1E-11
1E-12
TPA-8D12-001
|
CV 203 5 pin
Abstract: GaAs array, 850nm PIN photodiode 850nm TPA-8D04-003 PIN photodiode chip 850nm TPA photodiode
Text: TPA-8D04-003 GaAs PIN photodiode array FEATURES: •1x4 array bar with 250 um pitch. • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R RS ∆R ID VBD C TR/TF 0.50
|
Original
|
PDF
|
TPA-8D04-003
850nm
1E-10
1E-11
1E-12
1E-13
CV 203 5 pin
GaAs array, 850nm
PIN photodiode 850nm
TPA-8D04-003
PIN photodiode chip 850nm
TPA photodiode
|
TPA photodiode
Abstract: PIN photodiode chip 850nm PIN photodiode 850nm
Text: TPA-8D04-002 GaAs PIN photodiode chip FEATURES: •1xN array bar with 250 um pitch N≥2 • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R RS ∆R ID VBD C TR/TF
|
Original
|
PDF
|
TPA-8D04-002
850nm
1E-10
1E-11
1E-12
TPA photodiode
PIN photodiode chip 850nm
PIN photodiode 850nm
|
GaAs array, 850nm
Abstract: PIN photodiode 850nm TPA-8D04-005
Text: TPA-8D04-005 GaAs PIN photodiode array FEATURES: • 1x4 array bar with 250 um pitch • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.5 0.55 0.2
|
Original
|
PDF
|
TPA-8D04-005
850nm
850nm
1E-10
1E-11
1E-12
1E-13
1E-14
GaAs array, 850nm
PIN photodiode 850nm
TPA-8D04-005
|
TEM00
Abstract: NTC Thermistor 8 kOhm
Text: Version 0.90 09.06.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-0773-00020-1500-BFY02-0000 General Product Information
|
Original
|
PDF
|
EYP-DFB-0773-00020-1500-BFY02-0000
TEM00
NTC Thermistor 8 kOhm
|
laser diode lifetime
Abstract: diode laser bragg TEM00 Thermistor 200 dbr laser
Text: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION BAL DFB/DBR Laser EYP-DBR-1080-00020-2000-BFY02-0000 General Product Information
|
Original
|
PDF
|
EYP-DBR-1080-00020-2000-BFY02-0000
laser diode lifetime
diode laser bragg
TEM00
Thermistor 200
dbr laser
|
laser diode RW
Abstract: laser diode specification sheet fabry perot laser spectrum fabry perot TEM00 laser diode pinout EYP-RWL-0730-00020-1500-SOT02-0000 diode device data on semiconductor
Text: 1.00 05.06.2007 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry/Perot Laser with Ridgle Waveguide RWL DATA SHEET RW Laser EYP-RWL-0730-00020-1500-SOT02-0000 Absolute Maximum Ratings Symbol Unit Operational Temperature at case
|
Original
|
PDF
|
EYP-RWL-0730-00020-1500-SOT02-0000
laser diode RW
laser diode specification sheet
fabry perot laser spectrum
fabry perot
TEM00
laser diode pinout
EYP-RWL-0730-00020-1500-SOT02-0000
diode device data on semiconductor
|
TEM00
Abstract: No abstract text available
Text: DATA SHEET EYP-DFB-0785-00040-1500-BFY02-0000 Version 0.92 2009-05-06 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 785 nm DFB Laser with hermetic Butterfly Housing
|
Original
|
PDF
|
EYP-DFB-0785-00040-1500-BFY02-0000
10rease
TEM00
|
EYP-DFB-0852-00050-1500-BFY02-0000
Abstract: diode type NTC Thermistor TEM00 NTC Thermistor 8 kOhm dbr diode
Text: DATA SHEET EYP-DFB-0852-00050-1500-BFY02-0000 Version 1.05 2009-01-07 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 852 nm DFB Laser with hermetic Butterfly Housing
|
Original
|
PDF
|
EYP-DFB-0852-00050-1500-BFY02-0000
EYP-DFB-0852-00050-1500-BFY02-0000
diode type NTC Thermistor
TEM00
NTC Thermistor 8 kOhm
dbr diode
|
TEM00
Abstract: laser diode 760 NTC Thermistor 100 KOhm
Text: DATA SHEET EYP-DFB-0760-00050-1500-BFY02-0000 Version 0.91 2009-01-07 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 760 nm DFB Laser with hermetic Butterfly Housing
|
Original
|
PDF
|
EYP-DFB-0760-00050-1500-BFY02-0000
TEM00
laser diode 760
NTC Thermistor 100 KOhm
|
TEM00
Abstract: NTC Thermistor 100 KOhm 763nm
Text: DATA SHEET EYP-DFB-0763-00010-1500-BFY02-0000 Version 0.92 2009-01-07 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 763 nm DFB Laser with hermetic Butterfly Housing
|
Original
|
PDF
|
EYP-DFB-0763-00010-1500-BFY02-0000
TEM00
NTC Thermistor 100 KOhm
763nm
|
1083
Abstract: TEM00
Text: DATA SHEET EYP-DFB-1083-00030-1500-BFY02-0x0x Version 0.90 2009-04-27 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 1083 nm DFB Laser with hermetic Butterfly Housing
|
Original
|
PDF
|
EYP-DFB-1083-00030-1500-BFY02-0x0x
1083
TEM00
|
1060 nm GaAs Laser Diode
Abstract: TEM00 5d-fb
Text: DATA SHEET EYP-DFB-1060-00040-1500-BFY02-0000 Version 1.02 2009-01-07 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 1060 nm DFB Laser with hermetic Butterfly Housing
|
Original
|
PDF
|
EYP-DFB-1060-00040-1500-BFY02-0000
1060 nm GaAs Laser Diode
TEM00
5d-fb
|
|
|
0795
Abstract: TEM00 EYP-DFB-0795-00040-1500-BFY02-0000 laser diode pinout NTC Thermistor 8 kOhm
Text: DATA SHEET EYP-DFB-0795-00040-1500-BFY02-0000 Version 0.90 2009-05-06 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 795 nm DFB Laser with hermetic Butterfly Housing
|
Original
|
PDF
|
EYP-DFB-0795-00040-1500-BFY02-0000
10rease
0795
TEM00
EYP-DFB-0795-00040-1500-BFY02-0000
laser diode pinout
NTC Thermistor 8 kOhm
|
hcnr201 4-20 ma
Abstract: hncr200 hcnr 201 optocoupler application analog optocoupler hcnr201 HCNR200 datasheet hcnr 200 current sensor lm158 hcnr201 4-20 ma amp hcnr201 optocoupler application HCNR201
Text: HCNR200 and HCNR201 Applications in Motor Drive and Current Loop Application Note 5394 Abstract Introduction This note covers operation and applications of the HCNR200 and HCNR201 high-linearity analog optocouplers. Internal operation and the servo control mechanism
|
Original
|
PDF
|
HCNR200
HCNR201
HCNR201
HCNR200/201
5989-2099EN,
5989-2100EN,
AV02-1333EN
hcnr201 4-20 ma
hncr200
hcnr 201 optocoupler application
analog optocoupler hcnr201
datasheet hcnr 200
current sensor lm158
hcnr201 4-20 ma amp
hcnr201 optocoupler application
|
SFP reference design kit
Abstract: AN-1166 HDMP-1687 1000BASE-SX HFBR-5701L HFBR-5710L 696.1 LC-Connector diode 105y t 63 n 1200
Text: Application Note For GigaBit Ethernet Physical Layer Solution Utilizing Small Form Factor Pluggable SFP Optical Transceivers and Quad-Channel SerDes Application Note 1243 Introduction Avago Technologies’ objective in creating this application note is to generate a ready-to-use physical
|
Original
|
PDF
|
5701L/5710L)
HDMP-1687)
HFBR-5710L
5988-3449EN
SFP reference design kit
AN-1166
HDMP-1687
1000BASE-SX
HFBR-5701L
HFBR-5710L
696.1
LC-Connector
diode 105y
t 63 n 1200
|
ARINC 629 sim
Abstract: m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629
Text: The Microelectronic Specialists Product SHORT FORM January 2001 AEROFLEX UTMC UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE ■ 1760 ■ ■ ■ ■ ■ ■ ■ ■ 84,132 84 1.0E6* Q,V 5962-92118 ■ ■ ■ ■ ■ ■ ■
|
Original
|
PDF
|
UT69151
800-645-UTMC
800-THE-1553
800-THE-1553
ARINC 629 sim
m38510/55501
AMP ARINC-629 SIM
MT72038
smd cmos 4435
CQFP 240
arinc 629 controller
P2X smd
CERAMIC PIN GRID ARRAY CPGA lead frame
arinc 629
|
TH7421A
Abstract: thomson vd 167 thomson ccd
Text: SSE D • T02bû72 0001002 TT7 ■ THCH /"-‘W ' - S~S~ O THOMSON COMPOSANTS M ILITAIRES ET SPATIAUX TH 7421A THOMSON MIL ET SPATIAUX 300 PIXEL SWIR MULTIPLEXED LINEAR ARRAYS ex :THX 31800 DESCRIPTION The TH 7421A is a module of 299 InGaAs photodiodes and
|
OCR Scan
|
PDF
|
TH7421A
TH7421AVAA
TH7421AVAB
TH7421AVAC
TH7421AVAD
TH7421A
thomson vd 167
thomson ccd
|
Bipolar HJ 2611b
Abstract: hj 2611b LC7860K 2611B LA6510 LA9200N 2611B HJ C 2611B EFM 9201 LC7881
Text: |Ordering number: EN2611B| Monolithic Linear IC LA9200NM, LA9201M No. 2611B S A Ü V O F Analog Signal Processors for Compact Disc Players 1 O VERVIEW PINOUT The LA9200NM and LA9201M are bipolar, analog signal processors for use in com pact disc players. They
|
OCR Scan
|
PDF
|
EN2611B|
2611B
LA9200NM,
LA9201M
LA9200NM
LA9201M
LC7860K
LC7863K
Bipolar HJ 2611b
hj 2611b
2611B
LA6510
LA9200N
2611B HJ
C 2611B
EFM 9201
LC7881
|
sanyo v38
Abstract: 2611B LC7860K EN 2611B sanyo Laser pickup LA9200NM SANYO LC7881 EFM 9201 LA9201M LC7881
Text: b3E T> 7 T 1 7 D 7 fci 0 0 1 1 T B 7 » T S A J SANYO SEMICONDUCTOR CORP LA9200NM, 9201M 3102 2 6 IIB £ 3 5 M onolithic Linear IC 3052A A n alog Signal Processor for C o m p a ct D isc Players O V ER VIEW PINOUT The LA9200NM and LA9201M are bipolar, analog
|
OCR Scan
|
PDF
|
LA9200NM,
9201M
7T17D7fci
3052a
26IIB
LA9200NM
LA9201M
LC7860K
sanyo v38
2611B
EN 2611B
sanyo Laser pickup
SANYO LC7881
EFM 9201
LC7881
|
SANYO LC7881
Abstract: sanyo v38 LC7860k
Text: b3E T> 7 T 1 7 D 7 fci 0 0 1 1 T B 7 » T S A J SANYO SEMICONDUCTOR CORP LA9200NM, 9201M 3102 2 6 IIB £ 3 5 M onolithic Linear IC 3052A A n alog Signal Processor for C o m p a ct D isc Players O V ER VIEW PINOUT The LA9200NM and LA9201M are bipolar, analog
|
OCR Scan
|
PDF
|
LA9200NM,
9201M
7T17D7fci
3052a
26IIB
LA9200NM
LA9201M
LC7860K
SANYO LC7881
sanyo v38
|
LA9200N
Abstract: la9200
Text: b3E D 7Ti7G7fci D Ü 1 1 S3 S T27 » T S A J SANYO S E M I C O N D U C T O R CORP LA9200NM, 9201M 3102 2611B M o n o lith ic Linear IC 3052A Analog Signal Processor for lompact Disc Players OVERVIEW PINOUT The LA9200NM and LA9201M are bipolar, analog signal processors for use in compact disc players. They
|
OCR Scan
|
PDF
|
LA9200NM,
9201M
LA9200NM
LA9201M
LC7860K
LC7863K
LC7881
LA9200N
la9200
|
LA9200N
Abstract: 7860K FMU 100 2611B K786 LC7860k LA9200NM LC7881 SF 9201 EN2611B
Text: IOrdering number: EN2611B Monolithic Linear 1C i SA\YOrF No. 2611B LA9200NM, LA9201M Analog Signal Processors for Compact Disc Players _ / OVERVIEW ~N,_ PINOUT The LA9200NM and LA9201M arc bipolar, analog signal processors for use in compact disc players. They
|
OCR Scan
|
PDF
|
EN2611B
LA9200NM,
LA9201M
LA9200NM
LA9201M
LC7860K
LC7863K
LC7881
LA9200N
7860K
FMU 100
2611B
K786
SF 9201
EN2611B
|
