Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TPC8207 Search Results

    SF Impression Pixel

    TPC8207 Price and Stock

    Toshiba America Electronic Components TPC8207(TE12L)

    MOSFET 2N-CH 20V 6A 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TPC8207(TE12L) Digi-Reel 1
    • 1 $1.18
    • 10 $1.18
    • 100 $1.18
    • 1000 $1.18
    • 10000 $1.18
    		Buy Now
    Quest Components TPC8207(TE12L) 2,225
    • 1 $1.456
    • 10 $1.456
    • 100 $1.456
    • 1000 $0.5824
    • 10000 $0.5096
    		Buy Now

    Toshiba America Electronic Components TPC8207(TE12L,Q)

    MOSFET 2N-CH 20V 6A 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TPC8207(TE12L,Q) Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.34375
    		Buy Now

    TPC8207 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPC8207 Toshiba TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,6A I(D),SO Original PDF
    TPC8207 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8207 Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) Original PDF
    TPC8207(TE12L) Toshiba FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 20V 6A 8-SOP Original PDF
    TPC8207(TE12L,Q) Toshiba FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH DUAL 20V 6A SOP-8 Original PDF

    TPC8207 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPC8207

    Abstract: A1930
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207 TPC8207 A1930

    A1930

    Abstract: TPC8207
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207 A1930 TPC8207

    Untitled

    Abstract: No abstract text available
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Small footprint due to small thin package. • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207

    Untitled

    Abstract: No abstract text available
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207

    tpc8207

    Abstract: No abstract text available
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207 tpc8207

    TPC8207

    Abstract: No abstract text available
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207 TPC8207

    Untitled

    Abstract: No abstract text available
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Small footprint due to small thin package. • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207

    TPC8207

    Abstract: No abstract text available
    Text: TPC8207 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII TPC8207 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。 •


    Original     		PDF TPC8207 TPC8207

    Untitled

    Abstract: No abstract text available
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207

    TPC8207

    Abstract: No abstract text available
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207 TPC8207

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    tpc8107

    Abstract: tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002
    Text: Power MOSFETs TPC Series PRODUCT GUIDE Toshiba Power Compact Series devices have been developed for use in high-speed switching applications and in various interfaces. Toshiba has developed this high-efficiency low ON-resistance series using processes specially formulated to ensure that the devices can be used in


    Original     		PDF 3525C-0209 tpc8107 tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    TAR5S15

    Abstract: AF200 TPCS8204 QFP160 TAR5SB15 TC74LVX TMPR4955AF tar5sb TPCS8206 QFP-160
    Text: 東 芝 半 導 体 情 報 誌 アイ 1 2001・1月号 発 行 ／（ 株 ）東 芝セミコンダクター社 電子デバイス営業事業部 営業企画部 T E L . 0 3-3 4 5 7-3 4 0 5 F A X . 0 3-5 4 4 4-9 4 3 1 C O N T E Vol.102 N T TX System RISCの広告が


    Original     		PDF TMPR4955AF-200 RISC044-548-2214 TX49/H2 TX49/H2) AF-200 200MHz 200MHz100MHz QFP160 TC74LVX4051/5011ARM946E-STMSoC TAR5S15 AF200 TPCS8204 QFP160 TAR5SB15 TC74LVX TMPR4955AF tar5sb TPCS8206 QFP-160

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent

    Untitled

    Abstract: No abstract text available
    Text: TE N TA TIVE T O S H IB A TPC8207 TO SH IB A FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O S H I TPC8207 Lithium Ion Battery Applications High Speed and High Efficiency DC-DC Converters Note Book PC .Portable Equipments Applications •Low drain-source ON resistance


    OCR Scan     		PDF TPC8207 10/Li