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Toshiba America Electronic Components TPCP8503(TE85L F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	TPCP8503(TE85L F)		7,200			1 $1.387 10 $1.387 100 $1.387 1000 $1.387 10000 $0.4161	Buy Now

TPCP8503 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MA801 Abstract: No abstract text available Text: TPCP8503 TOSHIBA Transistor Silicon NPN Triple Diffused Type TPCP8503 High-Voltage Switching Applications Unit: mm 0.33±0.05 0.05 M A High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) 2.4±0.1 • (IC = 20 mA, IB = 0.5 mA)	Original	TPCP8503 MA801	PDF
TPCP8503 Abstract: No abstract text available Text: TPCP8503 TOSHIBA Transistor Silicon NPN Triple Diffused Type TPCP8503 High-Voltage Switching Applications Unit: mm 0.33±0.05 0.05 M A High breakdown voltage: VCEO = 600 V Low saturation voltage: VCE sat = 1.0 V (max) 2.4±0.1 • • (IC = 20 mA, IB = 0.5 mA)	Original	TPCP8503 TPCP8503	PDF
ESM 740 Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.	Original	SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
transistor 2sc5353 Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000	Original	DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA	PDF