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    TR/1FT TRANSISTOR Search Results

    TR/1FT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TR/1FT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1412

    Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
    Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type


    Original     		PDF 2SA1037AK SC-88A -50/iA -50pA --12V, AC221 2SC1412 VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK

    2N3904

    Abstract: 2N39D4 2N3304 pc 525 2N39Q4 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3
    Text: 2N3904 S/S TR r-r. ELECTRONICS GENERAL PURPOSE TRANSISTOR Colledor-Emitter Voltage: VCEOm40V Collector Dissipation: ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF 2N39Q4 VCEOm40V 2N3904 2N3904 2N3904) 2N39D4 2N3304 pc 525 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3

    et1600

    Abstract: Japanese Transistor TRANSISTOR P 3 80ng transistor N J
    Text: VISHAY Vishay Telefunken T Classification Chart for Opto Couplers G e n e ra l p u rp o s e CTR>I0% Standard 4N25/2<> a Transistor output -, * - 4 N 3 Ï-3 7 !. TRMÔWE. I B ase n.c. |- Transistor output H igh CTR Darlington output American pin connection


    OCR Scan     		PDF 4N25/2< V1CT6H/62 KK27PH KK24P 3010PiG 3020P ET1600 Japanese Transistor TRANSISTOR P 3 80ng transistor N J

    OA606

    Abstract: No abstract text available
    Text: /T ra n sisto rs DTB123TK DTB123TK Digital Transistors Includes Resistors 7 f/ T r a n s is to r Switch • • « ä 1) / W T X fflO fiÔ L É r t iK L T t'-S /c tb , ^ fä H / D im e n sio n s (Unit : mm) (1) Emitter (2) Base (3) Collector A m w ftftl-H m ti L T -l >


    OCR Scan     		PDF DTB123TK SC-59 --10V, 100MHz --50mA, OA606

    mosfet low vgs 1A

    Abstract: No abstract text available
    Text: 2SK1973F5 h y V v 7»$ /Transistors 2SK 1973F5 y ij □ > N f * * Jl MOS K7 > y 2 2 Silicon N-channel MOSFET ^ < y ^ /Switching • i'i-ffi^'Ü H /D im en sio n s U n it: mm 1) 1ft* 2) i S i i X - f v ^ ^ ^ t " — Ko 3) SOA 4) iE i* [is & * ''fs a m o 5)


    OCR Scan     		PDF 2SK1973F5 1973F5 mosfet low vgs 1A

    1Ft TRANSISTOR

    Abstract: tr/1Ft TRANSISTOR
    Text: TOSHIBA TPC8002 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8002 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R ßS (ON)“ H -5 m n (Typ.) High Forward Transfer Adm ittance: |Yfs| = 15S (Typ.)


    OCR Scan     		PDF TPC8002 1Ft TRANSISTOR tr/1Ft TRANSISTOR

    70910

    Abstract: transistor cny CNY17F-1X E91231
    Text: ISOCOM COMPONENTS LTD HôfibSlO QQQOSSM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a


    OCR Scan     		PDF 46fibSlQ 17F-1X, 17F-2X, 17F-3X, 17F-4X IF-20mA) 70910 transistor cny CNY17F-1X E91231

    2SC4458

    Abstract: No abstract text available
    Text: Ordering num ber: EN 3329 I SA ft/O i _ No.3329 2SC4458 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F eatu re s • High breakdown voltage, high reliability •Fast switching speed • Wide ASO • Adoption of MBIT process


    OCR Scan     		PDF 2SC4458 300//s 2SC4458

    1518 B TRANSISTOR

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    OCR Scan     		PDF PHP8N20E T0220AB 1518 B TRANSISTOR

    f0r1a

    Abstract: tt 18934 2SK786 Transistor S1D F0R1 111IN
    Text: 6427525 Tfl N E C ELECTRONICS D Ë | b M 27525 INC Ü Q 1 AT34 gsQ 13934 T-39-13 q T . PRELIMINARY SPECIFICATION MOS FIELD EFFECT ELECTRON DEVICE TRANSISTOR 2SK786 FAST SWITCHING N - C H A N N E L S I L I C O N POWER MOS Features Suitable for switching power supplies,


    OCR Scan     		PDF Jb42752S T-39-13 2SK786 f0r1a tt 18934 2SK786 Transistor S1D F0R1 111IN

    TC74HC4538P

    Abstract: Mono stable
    Text: TOSHIBA LO GI C/M EMO RY 116 O I 1017349 QOlfltlS l | TC74HC4538P/F T - S m TC74HC4538P/F DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR The TC74HC4538 Is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2M0S technology. It achieves the high speed operation similar to equivalent


    OCR Scan     		PDF TC74HC4538P/F TC74HC4538P/F TC74HC4538 001S1 TC74HC4538P/F-----OUTPUT TC74BC4538P/F TC74HC4538P Mono stable

    16N05L

    Abstract: RFD16N05L 16N05
    Text: m H a rris uj s e m ic o n d u c to r June 19 9 2 R F D 16N 05 L R F D 16 N 0 5 L S M N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-251 AA TOP VIEW • 1 6 A .5 0 V • r DS(ON) = 0.047Q • UIS SOA Rating Curves (Single Pulse)


    OCR Scan     		PDF O-251 O-252AA 22E-10 1e-30 11E-9 38E-9 0E-12 16N05L RFD16N05L 16N05

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1285C International IOR Rectifier HEXFET PO W ER M O S FE T IRFY044CM N-CHANNEL Product Summary 60 Volt, 0.040Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power M O SFET transistors. The effi­


    OCR Scan     		PDF 1285C IRFY044CM 4A55452

    JI32

    Abstract: 2SK482 T460 t460 transistor diode sg 5 ts
    Text: NEC m ^ T Y = 7 > i > 7 * MOS f v r x Field Effect P ow er Transistor _ 2SK482 FET n im m N-Channel MOS Field E ffect P ow er T ra n s is to r Sw itching Industrial Use 2SK482ii, tfjIiEfcCON-f-v —MOS FET"C, Xj -yj - fl-J & l*]/P A C K A G E DIM ENSIO NS


    OCR Scan     		PDF 2SK482 2SK482Ã JI32 2SK482 T460 t460 transistor diode sg 5 ts

    WH025

    Abstract: TC-6248
    Text: Compound Transistor GN1A4P ^-fi ‘ mm ft m 2.1 ± 0 .1 o '< -i T 7 s ft £ f i;£ [* j$ ( R i = 10 k£2, R 2 = 47 1.2 5 ± 0 .1 kQ) )C O G A 1 A 4 P t =J > 7 ° | J y > ? U T - fé flf- e è M a r k in g (T a = 25 °C) m u 1»S 3 L- 7 7 • 3 ? •''i -


    OCR Scan     		PDF PWS10 WH025 TC-6248

    Untitled

    Abstract: No abstract text available
    Text: m m o a CM150E3U-24H x Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Chopper IGBTMOD U-Series Module 150 Amperes/1200 Volts Tq Measured Description: -1 = 1 Î c I 1= 1 1= 1 H Powerex Chopper IGBTMOD™ Modules are designed for use in


    OCR Scan     		PDF CM150E3U-24H Amperes/1200 15697-tBOO

    Avantek uto 512

    Abstract: ANA 658 Avantek amplifier Avantek* UTC AVANTEK utc Avantek rf amplifier RF power amplifier 49 MHz AVANTEK TO-8 Avantek amplifier UTC
    Text: AVANTEK Q INC a v a MME n t b » H . . k HMVîbb 0 0 0 7 e]? 1 !A V A . UTO/UTC 512 Series ,. Thln-Fllm Cascadable Amplifier 5 to 500 MHz o\ FEATURES APPLICATIONS • • • • • IF/RF Amplification Frequency Range: 5 to 500 MHz Medium Gain: 20.0 dB Typ


    OCR Scan     		PDF 11415b 0007e] T-14-oH Avantek uto 512 ANA 658 Avantek amplifier Avantek* UTC AVANTEK utc Avantek rf amplifier RF power amplifier 49 MHz AVANTEK TO-8 Avantek amplifier UTC

    Untitled

    Abstract: No abstract text available
    Text: SILICON MONOLITHIC BIPO LAR LINEAR INTEGRATED CIRCUIT TA8006ASN 5V V O L T A G E R E G U L A T O R W IT H W A T C H D O G T IM E R The TA8006ASN is an 1C specially designed for microcomputer systems. It incorporates a highly accurate coristant-voltage power supply 5 ± 0.1V and various


    OCR Scan     		PDF TA8006ASN TA8006ASN

    K2400F1

    Abstract: metal halide ignitor circuit IGNITOR Z 400 M IGNITOR Z 400 M k k2401 KZ20D hid lamp ignitor application notes HQI-T250W OSRAM ignitor ignitor circuit 400
    Text: SIDAC 95 - 330 Volts Genera! Description The Sidac is a silicon bilateral voltage triggered sw itch with greater pow er-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac sw itches on through a negative resistance region


    OCR Scan     		PDF DO-15X -214AA TQ-202AB K2400F1 metal halide ignitor circuit IGNITOR Z 400 M IGNITOR Z 400 M k k2401 KZ20D hid lamp ignitor application notes HQI-T250W OSRAM ignitor ignitor circuit 400

    se5020

    Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
    Text: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES


    OCR Scan     		PDF 2SA1464 2SC3739 se5020 marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM

    2N404

    Abstract: 2N404 transistor OC 74 germanium transistor germanium transistor 2n404a 2N404A J971 2N404 JAN
    Text: MIL -S-19500/20C 22 March .1971 _ SUPERSEDING MIL -S -195 0 0 /2 OB 23 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, LOW-POWER TYPES 2N404 AND 2N404A T his sp ecification is mandatory for usg by all D ep artm ents and A gen cies of the Departm ent of D efen se .


    OCR Scan     		PDF -S-19500/20C 2N404 2N404A 2N404A 2N404. -19500/20C MIL-S-19500, MIL-S-19500 2N404 transistor OC 74 germanium transistor germanium transistor 2n404a J971 2N404 JAN

    VPA05

    Abstract: No abstract text available
    Text: I Ordering number: EN3S26 FBET Hybrid 1C VPM04 Video Pack, Three-channel, RGB Video Output Amplifier for Medium-resolution CRT Displays No. 3526 SA%YO F i / / / .f •j OVERVIEW 4 X . ,.:s ' :v ".vt-Äs. It "X > ' PINOUT The VPM04 is a composite, three-channel, video output


    OCR Scan     		PDF EN3S26 VPM04 VPA05

    Untitled

    Abstract: No abstract text available
    Text: NJL5196K/97K GENERAL PURPOSE PHOTO REFLECTOR • GENERAL DESCRIPTION The NJL5196K/5197K are super miniature and super thin general purpose photo reflectors, which can be soldering by reflow-method. These are compatible to NJL5181K/5183K in the characteristics, and attain high


    OCR Scan     		PDF NJL5196K/97K NJL5196K/5197K NJL5181K/5183K

    D1302

    Abstract: D1303 FM1111 2N2620 D1185 MPF1000 D1103 BFX78 MFE2098 TIXS79
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. 2N4092AÃ 2N4093AÃ 2N4094t 2N4095t CFM13026 ul82t U182T RM3036 D1302 D1303 FM1111 2N2620 D1185 MPF1000 D1103 BFX78 MFE2098 TIXS79