10N60P
Abstract: g 10N60 TJM 10
Text: PolarHVTM HiPerFET Power MOSFET IXFA 10N60P IXFP 10N60P VDSS = 600 V = 10 A ID25 Ω RDS on ≤ 740 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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10N60P
10N60P
g 10N60
TJM 10
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60Z-Q
10N60Z-Q
10N60ZL-TF1-T
10N60ZG-TF1-T
QW-R502-B05
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
10N60KL-TF3-T
10N60KG-TF3-T
O-220F
10N60KL-TF1-T
10N60at
QW-R502-743
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10N60K
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
O-220F
QW-R502-743
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
10N60KL-TF3-T
10N60KG-TF3-T
O-220F
10N60KL-TF1-T
10N60KG-TF1-T
O-22at
QW-R502-743
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
O-220F
O-220F1
QW-R502-743
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60Z Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60Z
10N60Z
QW-R502-936
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10N60G
Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
O-220
O-220F1
O-220F2
QW-R502-119
10N60G
mosfet 10a 600v
10N60G-TF3-T
utc 10n60l
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tf 10n60
Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
QW-R502-119
tf 10n60
MOSFET 10n60
equivalent+of+10N60+mosfet
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10N60G TO-220F
Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
QW-R502-119
10N60G TO-220F
UTC10N60L,10N60L,
UTC10N60L,10N60L
utc 10n60l
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UTC10N60
Abstract: utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10n60 QW-R502-119 10N60G-TQ2-T 10N60L-TQ2-T
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
10N60
QW-R502-119
UTC10N60
utc 10n60l
10N60G
10N60G-TF3-T
10N60L
10N60L-TF2-T
10N60G-TQ2-T
10N60L-TQ2-T
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10N60G TO-220F
Abstract: MOSFET 10n60 utc 10n60l 10N60 TO-220-F2 10N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
O-220
10N60
O-220F
O-220F1
O-220F2
QW-R502-119
10N60G TO-220F
MOSFET 10n60
utc 10n60l
TO-220-F2
10N60G
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 10N60K Preliminary Power MOSFET 1 0 A, 6 0 0 V N -CH AN N EL POWER M OSFET 1 DESCRI PT I ON The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
O-220F
O-220F1
QW-R502-743
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10N60L
Abstract: 10N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
O-220
10N60
O-220F
O-220F1
O-220F2
QW-R502-119
10N60L
10N60G
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UTC10N60
Abstract: 10N60G-TF1-T tr 10n60 10N60L-TQ2-T 10N60G TO-220F UTC 10N60L
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
O-220
10N60
O-220F
O-220F1
O-220F2
QW-R502-119
UTC10N60
10N60G-TF1-T
tr 10n60
10N60L-TQ2-T
10N60G TO-220F
UTC 10N60L
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IXTP10N60PM
Abstract: No abstract text available
Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
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10N60PM
O-220
405B2
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10N60PM
Abstract: IXTP10N60PM
Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
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10N60PM
O-220
405B2
10N60PM
IXTP10N60PM
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MOSFET IXYS TO-263
Abstract: No abstract text available
Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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10N60P
10N60P
O-220
O-263
405B2
MOSFET IXYS TO-263
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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10N60P
10N60P
O-263
O-220
405B2
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Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions
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10N60C5M
O-220
20090209d
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10N60C5M
Abstract: kw0649 IGBT GS c16tj 10N60C
Text: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions
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10N60C5M
O-220
10N60C5M
kw0649
IGBT GS
c16tj
10N60C
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10N60C
Abstract: C3525
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET
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10N60C5M
O-220
10N60C
C3525
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10N60C
Abstract: 10N60C5M
Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions
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10N60C5M
O-220
20090209d
10N60C
10N60C5M
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SGW10N60RUFD
Abstract: igbt 300V 10A
Text: C O -P A K IG B T SGW 10N60RUFD FE A TU R ES D2-PAK * Short Circuit rated 10uS @ Tc=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V @ lc=1 OA * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) 4* A P P LIC A TIO N S
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SGW10N60RUFD
SGW10N60RUFD
igbt 300V 10A
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