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    9435 GM

    Abstract: TC1201 9435 72 TRANSCOM TC1201 6526 89 18 8244-27 TC2201
    Text: TC2201 REV.2_04/12/2004 Plastic Packaged Low Noise PHEMT GaAs FETs FEATURES • • • • • • • PHOTO ENLARGEMENT 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 7 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 8 dB Typical Linear Power Gain at 12 GHz


    Original     		PDF TC2201 TC2201 TC1201 9435 GM 9435 72 TRANSCOM TC1201 6526 89 18 8244-27

    TC1201

    Abstract: TC3921 WG SOT143R
    Text: TC3921 REV1_20070503 Low-Cost Single-Bias Medium Power PHEMT GaAs FETs FEATURES PHOTO ENLARGEMENT ! 22 dBm Typical Output Power at 6 GHz ! High Linear Power Gain: GL = 12 dB Typical at 6 GHz ! Lg = 0.25 µm, Wg = 300 µm ! 100 % DC Tested ! Low Cost Plastic SOT143R Package


    Original     		PDF TC3921 OT143R TC3921 TC1201 WG SOT143R

    TC1201

    Abstract: TC1202 TC1601 tc1501 TC1806 TC1101 TC1102 TC1301 TC1304 TC1801
    Text: 20060526 FET Chips Products Selection Guide I. Super Lower Noise GaAs FETs Product No. Freq. GHz N.F. (dB) P-1 dB (dBm) Gain (dB) Notes TC1101 12 0.5 18.5 15 Chip TC1101V 12 0.5 18.5 15 Chip / with via hole TC1102 12 0.5 - 13 Chip TC1201 12 0.5 21.5 12 Chip


    Original     		PDF TC1101 TC1101V TC1102 TC1201 TC1201V TC1202 TC1301 TC1301V TC1304 TC1304V TC1201 TC1202 TC1601 tc1501 TC1806 TC1101 TC1102 TC1301 TC1304 TC1801