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    TRANSIENT DIODE BGE Search Results

    TRANSIENT DIODE BGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    TRANSIENT DIODE BGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PK P6KE 200A

    Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
    Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop


    Original     		PDF EC111 EC2111v1E0804 PK P6KE 200A SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA

    Untitled

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HRA series SMCJ-HRA Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HRA High Reliability series is designed specifically to protect sensitive electronic equipment from


    Original     		PDF -PRF-19500. DO-214AB 16mm/13â RS-481 16mm/7â

    GEZ 44 A diode

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HR series SMCJ-HR Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HR High Reliability series is designed specifically to protect sensitive electronic equipment from


    Original     		PDF E230531 DO-214AB 16mm/7â RS-481 GEZ 44 A diode

    diode BFT 99

    Abstract: Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor
    Text: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly


    Original     		PDF CD214C DO-214AB diode BFT 99 Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor

    GEZ DIODES

    Abstract: diode BFT 99 GFX DIODE GHM PF t54c 214B CD214C CD214C-T170A CD214C-T26A diode smc bfk
    Text: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly


    Original     		PDF CD214C DO-214AB bid004) e/IPA0408 GEZ DIODES diode BFT 99 GFX DIODE GHM PF t54c 214B CD214C-T170A CD214C-T26A diode smc bfk

    GFX DIODE

    Abstract: Diode GFK t100a GGR diode GGP DIODE diode gfm Diode T75A GGT DIODE ON BDP 284 diode marking GDE on semiconductor
    Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series


    Original     		PDF CD214C DO-214AB GFX DIODE Diode GFK t100a GGR diode GGP DIODE diode gfm Diode T75A GGT DIODE ON BDP 284 diode marking GDE on semiconductor

    diode BFT 99

    Abstract: BEM 45 bfw 10 transistor GGT DIODE ON marking BHR marking code BFK GHM DIODE GFX DIODE GGR diode GHM PF
    Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series


    Original     		PDF CD214C DO-214AB diode BFT 99 BEM 45 bfw 10 transistor GGT DIODE ON marking BHR marking code BFK GHM DIODE GFX DIODE GGR diode GHM PF

    marking diode KE

    Abstract: diode ed 5ca marking KE diode diode BFT 99 GEZ DIODES GFX DIODE t100a t100c 214B CD214C
    Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series


    Original     		PDF CD214C DO-214AB marking diode KE diode ed 5ca marking KE diode diode BFT 99 GEZ DIODES GFX DIODE t100a t100c 214B

    Diode GFK

    Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode smc bfk ghr 84 diode bfk 79 a diode marking GDg on semiconductor gex 33 diode diode marking 307 GDE on semiconductor
    Text: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series


    Original     		PDF DO-214AB RS-481-A DO-214AB) Diode GFK GFX DIODE diode marking GDE on semiconductor Gex DIODE diode smc bfk ghr 84 diode bfk 79 a diode marking GDg on semiconductor gex 33 diode diode marking 307 GDE on semiconductor

    diode marking GDE on semiconductor

    Abstract: bgv DIODE bdv 83 do SMCJ6.0C bem diode GGM DIODE SMCJ408CA Diode GFK 48 gft 70 diode marking BFK on semiconductor
    Text: T PL IA N M CO *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 495 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series


    Original     		PDF DO-214AB DO-214AB) diode marking GDE on semiconductor bgv DIODE bdv 83 do SMCJ6.0C bem diode GGM DIODE SMCJ408CA Diode GFK 48 gft 70 diode marking BFK on semiconductor

    Diode GFK

    Abstract: DIODE BFT marking code GFX DIODE GEZ DIODE Diode GFK 48 general semiconductor marking code GFX BFM General Semiconductor diode smc bfk GGR diode GGP 16 DIODE
    Text: NT IA PL M CO S oH *R Features • ■ ■ ■ ■ Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly


    Original     		PDF CD214C DO-214AB Diode GFK DIODE BFT marking code GFX DIODE GEZ DIODE Diode GFK 48 general semiconductor marking code GFX BFM General Semiconductor diode smc bfk GGR diode GGP 16 DIODE

    Diode GFK

    Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode marking BFK on semiconductor Diode BFM diode smc bfk Diode Gfg 33 GEZ DIODE DIODE gde 18
    Text: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series


    Original     		PDF DO-214AB RS-481-A DO-214AB) Diode GFK GFX DIODE diode marking GDE on semiconductor Gex DIODE diode marking BFK on semiconductor Diode BFM diode smc bfk Diode Gfg 33 GEZ DIODE DIODE gde 18

    BFK 79

    Abstract: diode marking GDE on semiconductor bem diode diode smc bfk Diode GFK 48 gdp 45 diode Diode GFK GFX DIODE Diode BFM bgv DIODE
    Text: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series


    Original     		PDF DO-214AB DO-214AB) BFK 79 diode marking GDE on semiconductor bem diode diode smc bfk Diode GFK 48 gdp 45 diode Diode GFK GFX DIODE Diode BFM bgv DIODE

    transient Diode bge

    Abstract: sml752r4an
    Text: _ SEMELAB 8133107 bGE D PLC 0 D 0 07 Ö E MH “ ISriLB 751 MOS POWER 4 M H “ SML802R4AN SML752R4AN SML802R8AN SML752R8AN SEME LAB 800V 750V 800V 750V 5.0A 5.0A 4.5A 4.5A 2.40Q 2.4012 2.8012 2.8012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF SML802R4AN SML752R4AN SML802R8AN SML752R8AN 802R4AN 752R8AN 802R8AN 752R4AN 100mS SML802R4/802R8AN transient Diode bge

    SML1002RCN

    Abstract: 1002rcn 1002R sml1002r4CN
    Text: SEHELAB bGE D PLC 0133107 GDOGTRG fi2fl « S M L B Mil FFË SEME MOS POWER 1 4 "T-3C1- im 1000V 900V 1000V 900V SML1002RCN SML902RCN SML1002R4CN SML902R4CN LAB 5.5A 5.5A 5.0A 5.0A 2.00Q 2.0012 2.4012 2.4012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF SML1002RCN SML902RCN SML1002R4CN SML902R4CN 902RCN 1002RCN 902R4CN 1002R4CN 100ms SML1002FV1002R4CN 1002R

    sml5560bn

    Abstract: SML6070BN G33s
    Text: SEMELAB PLC bGE D 5 1 3 3 157 ClDGObSS G33 • S M L B llll MOS POWER 4 ËFFË rT - 3 °l - IS llll SML6060BN SML5560BN SML6070BN SML5570BN SEME LAB 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Q 0.60Í2 0.70Q 0.70Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF SML6060BN SML5560BN SML6070BN SML5570BN 5560BN 6060BN 5570BN 6070BN SML6060/6070BN O-247AD G33s

    sml752r4gn

    Abstract: No abstract text available
    Text: S E ME LA B _ m PL C bGE D fll331fl7 D D D G Ô M t bTl • S M L B i = MOS POWER I M 4 T~-'3>°i - \3 SEME “ ■ I - 800V 750V 800V 750V SML802R4GN SML752R4GN SML802R8GN SML752R8GN LAB 2.4012 2.4012 2.8012 2.8012 4.3A 4.3A 4.0A 4.0A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF fll331fl7 SML802R4GN SML752R4GN SML802R8GN SML752R8GN 752R4GN 802R4GN 752R8GN 802R8GN De100

    501R1BN

    Abstract: sml451r1bn
    Text: SEMELAB PLC bGE D 6133107 D000b3b WO ISflLB 4 MOS POWER = 1 1 = " T SML5085BN SML4585BN SML501R1BN SML451R1BN SEM E LAB 500V 450V 500V 450V y \ - \ s 9.5A 9.5A 9.0A 9.0A 0.85Q 0.Q5Q. 1.10Q 1.1 OQ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		PDF D000b3b SML5085BN SML4585BN SML501R1BN SML451R1BN 4585BN 5085BN 451R1BN 501R1BN O-247AD sml451r1bn

    CR diode transient

    Abstract: 4065AN sml3565an SML3580AN
    Text: SEflELAB PLC bGE D 0133187 □□G07SG m i ISMLB lili SEME SML4065AN SML3565AN SML4080AN SML3580AN LAB 400V 10.0A 0.6512 350V 10.0A 0.6512 400V 9.0A 0.8012 350V 9.0A 0.80Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF G07SG SML4065AN SML3565AN SML4080AN SML3580AN 3580AN 4065AN 3565AN 4080AN 100mS CR diode transient SML3580AN

    5540a

    Abstract: 6040an sml5540an u772 5540AN
    Text: _ SEMELAB bGE PLC 3133107 D □□□□?□ T3T ISMLB MOS POWER à Ë ^Ë 'T Z ° l- -15 SML6040AN SML5540AN SML6045AN SML5545AN SEME LAB 600V 550V 600V 550V 15.5A 15.5A 14.5A 14.5A 0.40U 0.40Q 0.45Í2 0.45Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF 5540AN 6040AN 5545AN 6045AN SML5540/5545AN SML6040/604SAN 5540a sml5540an u772

    sml8075an

    Abstract: sml7575an sml7590an sml8090an 8075an
    Text: _ SEMELAB PLC bGE D • fll3 31fi7 UM Ü 0 0 07 ô b 3T7 « S f l L B MOS POWER “ im ” SML8075AN SML7575AN SML8090AN SML7590AN SEME LAB 800V 750V 800V 750V 11.5A 11.5A 10.5A 10.5A 4 0.75 Q 0.75 Q 0.90 fl 0.90 0 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF 31fi7 SML8075AN SML7575AN SML8090AN SML7590AN 8075AN 7590AN 7575AN 8090AN

    DDMS770

    Abstract: PC1210 SiEMENS EC 350 98 0
    Text: bGE ]> • Ô235b05 00457ti5 T3S M S I E C SIEMENS SIEMENS AKTI ENGESELLSCHAF ■7- 2 3 - Ö SI MOPAC Module VDS / d 7 BSM 294 F = 1000 V = 2 x 18 A R DS on = 0.63 £2 • • • • • • • Power module Half-bridge FREDFET N channel Enhancement mode


    OCR Scan     		PDF 023SbOS C67076-A1151-A2 fl23Sbà S1M00189 DDMS770 PC1210 SiEMENS EC 350 98 0

    BSM25GD120D

    Abstract: No abstract text available
    Text: bGE » ûaaSbGS 0045032 47T « S I E G • SIEMENS SIEMENS AKTIENGESELLSCHAF - 9 7 BSM 25 GD 120 D IGBT Module Preliminary Data V CE = 1200 V / c = 6 x 35 A at Tc = 25 C I c = 6 x 25 A at Tc = 80 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes


    OCR Scan     		PDF C67076-A2505-A2 sii00219 sii00220 BSM25GD120D

    BSM15GD100D

    Abstract: C160 004S7 VM305171
    Text: bGE D • fl235bG5 0DMS712 Tb3 ■ SIEG SIEMENS SIENENS AKTIENûESELLSCHAF ~TïJ3rC7 IGBT Module BSM15GD100D Preliminary Data V CE = 1000 V = 6 x 25 A at Tc = / c = 6 x 15 A at T c = 80 ‘C Ic • • • • • 25 C Power m odule 3-phase full bridge Including fast free-wheel diodes


    OCR Scan     		PDF BSM15GD100D VM305171 C67076-A2500-A2 235b05 125-C BSM15GD100D C160 004S7 VM305171