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    TRANSISTOR .280 4L STUD Search Results

    TRANSISTOR .280 4L STUD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR .280 4L STUD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UML25S

    Abstract: ASI10694
    Text: UML25S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML25S is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • PG = 9.5 dB Typical at 400 MHz • Economical .280” Stud Package


    Original     		PDF UML25S UML25S ASI10694 ASI10694

    MRF5176

    Abstract: No abstract text available
    Text: MRF5176 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5176 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD FEATURES: A 45° • PG = 10 dB Typical at 400 MHz • Economical .280” Stud Package


    Original     		PDF MRF5176 MRF5176

    UML25S

    Abstract: ASI10694
    Text: UML25S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML25S is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° • PG = 9.5 dB Typical at 400 MHz • Economical .280” Stud Package


    Original     		PDF UML25S UML25S ASI10694 ASI10694

    ULBM5

    Abstract: ASI10680
    Text: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is a gold metallized RF power transistor designed for 12.5 V, Class-C UHF communications applications. It utilizes emitter ballasting to achieve high reliability & ruggedness. PACKAGE STYLE .280 4L STUD


    Original     		PDF

    CD6105

    Abstract: No abstract text available
    Text: CD6105 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD6105 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • PG = 9.5 dB Typical at 400 MHz • Economical .280” Stud Package


    Original     		PDF CD6105 CD6105

    CD6105A

    Abstract: No abstract text available
    Text: CD6105A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD6105A is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • PG = 7.8 dB Typical at 400 MHz • Economical .280” Stud Package


    Original     		PDF CD6105A CD6105A

    TVU0.5

    Abstract: ASI10640
    Text: TVU0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5 is a gold metallized RF transistor designed for UFH linear applications for TV bands IV and V. It utilizes emitter ballasting for high linearity and ruggedness. PACKAGE STYLE .280 4L STUD A


    Original     		PDF

    ULBM10

    Abstract: ASI10682 TRANSISTOR TC 137
    Text: ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is a gold metallized RF power transistor designed for 12.5 V, Class-C application in 450-512 MHz frequency range. It utilizes emitter ballasting for high reliability and ruggedness. PACKAGE STYLE .280 4L STUD


    Original     		PDF ULBM10 ULBM10 ASI10682 TRANSISTOR TC 137

    cd2810

    Abstract: No abstract text available
    Text: CD2810 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD2810 is a UHF Communication Power Transistor for band IV and V Class A Applications up to 800 MHz. PACKAGE STYLE .280 4L STUD FEATURES: • Common Emitter • Omnigold Metallization System MAXIMUM RATINGS


    Original     		PDF CD2810 CD2810

    TRW54601

    Abstract: No abstract text available
    Text: TRW54601 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. FEATURES: • Diffused Ballast Resistors • Omnigold Metalization System • Common Emitter


    Original     		PDF TRW54601 TRW54601

    PT9702B

    Abstract: No abstract text available
    Text: PT9702B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9702B is a Common Emitter Device Designed for Class AB and C Amplifier Applications in the 220 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization


    Original     		PDF PT9702B PT9702B

    TPV394

    Abstract: No abstract text available
    Text: TPV394 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TPV394 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band II-III Transmitters. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting


    Original     		PDF TPV394 TPV394

    TPV591

    Abstract: No abstract text available
    Text: TPV591 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV591 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting


    Original     		PDF TPV591 TPV591

    TPV593

    Abstract: chroma 175 ic chroma sound cob
    Text: TPV593 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting


    Original     		PDF TPV593 TPV593 chroma 175 ic chroma sound cob

    PT9701B

    Abstract: No abstract text available
    Text: PT9701B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701B is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization


    Original     		PDF PT9701B PT9701B

    Untitled

    Abstract: No abstract text available
    Text: TPV 394 NPN RF POWER TRANSISTOR DESCRIPTION: The TPV 394 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band II-III Transmitters. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting


    Original     		PDF

    TPM401

    Abstract: No abstract text available
    Text: TPM401 NPN RF POWER TRANSISTOR DESCRIPTION: The TPM401 is a Common Emitter Device Designed for Class A and AB Amplifier Applications up to 1.0 GHz. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS


    Original     		PDF TPM401 TPM401

    pt9701

    Abstract: 55AD
    Text: PT9701 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization


    Original     		PDF PT9701 PT9701 55AD

    7550A

    Abstract: CD3968
    Text: CD3968 NPN RF POWER TRANSISTOR DESCRIPTION: The CD3968 is a Common Emitter Device Designed for Class C Amplifier Applications in the 960 MHz Mobile Radio Band. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting


    Original     		PDF CD3968 CD3968 7550A

    PT9704

    Abstract: TRANSISTOR pt9704 TRANSISTOR TC 137 transistor 832
    Text: PT9704 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9704 is Designed for wideband, large-signal amplifier Applications up to 500 MHz. PACKAGE STYLE .280" 4L STUD A 45° C FEATURES INCLUDE: E B • Gold Metalization • Diffused Ballast Resistors


    Original     		PDF PT9704 PT9704 TRANSISTOR pt9704 TRANSISTOR TC 137 transistor 832

    LT3014

    Abstract: No abstract text available
    Text: LT3014 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LT3014 is a Common Emitter Device Designed for General Purpose Class A and AB Amplifier Applications up to 1.0 GHz. FEATURES INCLUDE: PACKAGE STYLE .280 4L STUD • Gold Metalization • Emitter Ballasting


    Original     		PDF LT3014 LT3014

    MSC80806

    Abstract: No abstract text available
    Text: MSC80806 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC80806 is Designed for General Purpose Class A, Common Emitter Applications in the 500 MHz to 2.0 GHz Frequency Range. FEATURES INCLUDE: PACKAGE STYLE .280" 4L STUDLESS • Gold Metalization • Emitter Ballasting


    Original     		PDF MSC80806 MSC80806

    TPM401S

    Abstract: No abstract text available
    Text: TPM401S NPN RF POWER TRANSISTOR DESCRIPTION: The TPM401S is a Common Emitter Device Designed for Class A and AB Amplifier Applications up to 1.0 GHz. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS


    Original     		PDF TPM401S TPM401S

    BLX94A

    Abstract: BLX94
    Text: ASI BLX94A NPN RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI BLX94A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications from 50 to 500 MHz. FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting


    Original     		PDF BLX94A BLX94A BLX94