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    TRANSISTOR 05C Search Results

    TRANSISTOR 05C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 05C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.


    Original     		PDF WBFBP-05C WBFBP-05C DTC114E 100MHz

    marking A1 TRANSISTOR

    Abstract: marking G9 transistor 05c transistor marking G9 DTC114E
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.


    Original     		PDF WBFBP-05C WBFBP-05C DTC114E 100MHz marking A1 TRANSISTOR marking G9 transistor 05c transistor marking G9

    transistor A798

    Abstract: a1016 616 transistor
    Text: DOC. NO. 05CB-000392 PART NO. 0506-001002 PRFL IMINARY DATA SHEET NEC SILICON TRANSISTOR PA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The PA800T has built-in 2 low-voltage transistors which are designed


    Original     		PDF 05CB-000392 PA800T PA800T IS21eI2 2SC4228) transistor A798 a1016 616 transistor

    Step-Up

    Abstract: XC9131
    Text: XC9131 Series ETR0412-010 1A Driver Transistor Built-In, Multi Functional Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION XC9131 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a 0.2Ω(TYP.)


    Original     		PDF XC9131 ETR0412-010 Step-Up

    XC9131F05

    Abstract: LTF5022-LC XC9131F LMK212BJ-106KG XC9131 4020-2R VLS252012 XC9131H05C vlcf4020 LMK212BJ106KG
    Text: XC9131 Series ETR0412-008 1A Driver Transistor Built-In, Multi Functional Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION XC9131 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a 0.2Ω(TYP.)


    Original     		PDF XC9131 ETR0412-008 33load XC9131F05 LTF5022-LC XC9131F LMK212BJ-106KG 4020-2R VLS252012 XC9131H05C vlcf4020 LMK212BJ106KG

    Untitled

    Abstract: No abstract text available
    Text: FUMG9N Digital transistors built-in resistors Description Epitaxial planar type NPN silicon transistor (Built-in resistor type) WBFBP-05C (2x2×0.5) Features z Two DTC114E in a package. z Mounting cost and area can be cut in half. Application Dual Digital Transistors for Inverter Drive


    Original     		PDF WBFBP-05C DTC114E 150current 100MHz

    smd TRANSISTOR 05c sot23

    Abstract: transistor smd marking NA sot-23 smd diode marking 77 CMBT8050 smd transistor marking n 3 package 23 smd transistor 3K
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original     		PDF ISO/TS16949 CMBT8050 OT-23 C-120 CMBT8050Rev 240502E smd TRANSISTOR 05c sot23 transistor smd marking NA sot-23 smd diode marking 77 CMBT8050 smd transistor marking n 3 package 23 smd transistor 3K

    smd TRANSISTOR 05c sot23

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR CMBT 8050 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3


    Original     		PDF OT-23 C-120 smd TRANSISTOR 05c sot23

    smd TRANSISTOR 05c sot23

    Abstract: CMBT8050 ts 4141 TRANSISTOR smd tr415
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF CMBT8050 OT-23 C-120 CMBT8050Rev 240502E smd TRANSISTOR 05c sot23 CMBT8050 ts 4141 TRANSISTOR smd tr415

    smd TRANSISTOR 05c sot23

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF CMBT8050 OT-23 C-120 CMBT8050Rev 240502E smd TRANSISTOR 05c sot23

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PI N CONFI GURATI ON NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF CMBT8050 OT-23 C-120 CMBT8050Rev 240502E

    0A4B

    Abstract: keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


    Original     		PDF AN529 PIC16C5X PIC16C5X DS00529E-page 0A4B keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard

    4X4 HEX KEY PAD

    Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


    Original     		PDF AN529 PIC16C5X PIC16C5X 4X4 HEX KEY PAD keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF CMBT8050 OT-23 C-120 CMBT8050Rev 240502E

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    05cn10l

    Abstract: JESD22 PG-TO220-3
    Text: IPP05CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPP05CN10L PG-TO220-3 05CN10L 05cn10l JESD22 PG-TO220-3

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC TB D • 05Cm336 00037L.3 T ■ ALGR T -9 1-0 1 PRO CESS NJ35D Process NJ35D Dual N-Channel Junction Field-Effect Transistor Process N J35D is a monolithic dual N-channel junction field-effect transistor designed for use as a differential amplifier. The matching characteristics


    OCR Scan     		PDF 05Cm336 00037L NJ35D QS0433S 0DD37bM

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for


    OCR Scan     		PDF BU2522AX 1E-06

    78M0

    Abstract: stmicroelectronics diode sj transistor 6619 A982 l74m05 l78m
    Text: L78M00 SERIES POSITIVE VOLTAGE REGULATORS . OUTPUT CURRENT TO 0.5A . OUTPUT VOLTAGES OF 5; 6; 8; 9; 10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION The L78M00 series of three-terminal positive


    OCR Scan     		PDF L78M00 ISOWATT220, OT-82, OT-194 78M0 stmicroelectronics diode sj transistor 6619 A982 l74m05 l78m

    2SC5146

    Abstract: TRANSISTOR 2SA 2SK type Transistor 2SD 2SC2545, 2SC2546 2SC2547 2sb darlington 2sb647 2sd667 2sc458lg 2SC2546 2sb74
    Text: Product Profiles Bipolar PNP Transistor 2SA type Electrical characteristics Test Maximum ratings ^CEO Package SPAK TO-92 Type No, (V) 'c Pc (mA) (W) ^FE Test condition V_ condition vΠ(V) <c (mA) (sat) Cob 'C (mA) (mA) (pF) *T (MHz) Others 200 - (V) 2SA1337


    OCR Scan     		PDF 2SA1337 2SA1350 2SA1374 2SA1390 2SA673 2SA673A 2SC5146 TRANSISTOR 2SA 2SK type Transistor 2SD 2SC2545, 2SC2546 2SC2547 2sb darlington 2sb647 2sd667 2sc458lg 2SC2546 2sb74

    2N3924

    Abstract: 2n3924 equivalent
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 2N3924 T h e R F Line NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . o p t i m iz e d A n n u l a r t r a n s i s t o r f o r l a r g e - s i g n a l p o w e r a m p l if i e r a n d d r iv e r a p p l i c a t i o n s t o 3 0 0 M H z .


    OCR Scan     		PDF 2N3924 2N3924 2n3924 equivalent

    UA79M

    Abstract: A79M UA79M08M
    Text: TE XAS INSTR LIN/INTFC lflE » • OF D AT A F OR • 3-Terminal Regulators • Output Current Up to 500 mA ERRATA INFORMATION • No External Components • High Power Dissipation Capability • Internal Short-Circuit Current Limiting • Output Transistor Safe-Area Compensation


    OCR Scan     		PDF UA79M00 D2216, uA79M A79M UA79M08M

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPS611 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR T• P■ <MF; f i i■ 1■ FOR PHOTO SENSOR U nit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • [>5mm epoxy resin package (black • High sensitivity :I l = 120/;A (TYP.)


    OCR Scan     		PDF TPS611 TLN110 TLN205