Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 07N03L Search Results

    TRANSISTOR 07N03L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 07N03L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IPU07N03LA Preliminary data OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  n-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Low On-Resistance RDS(on) VDS 25 V RDS(on) 6.5 m ID 30


    Original     		PDF IPU07N03LA Q67042-S4150 07N03LA

    07N03LB

    Abstract: 07N03 07n03l IPP07N03LB JESD22
    Text: IPP07N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 6.6 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPP07N03LB PG-TO220-3-1 07N03LB 07N03LB 07N03 07n03l JESD22

    07N03LB

    Abstract: 07n03l 07N03 IPP07N03LB JESD22
    Text: IPP07N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 6.6 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPP07N03LB PG-TO220-3-1 07N03LB 07N03LB 07n03l 07N03 JESD22

    07n03l

    Abstract: 07N03LA 07N03 SMD TRANSISTOR MARKING code DD IPU07N03LA P-TO251-3-1 P-TO252-3-11
    Text: IPU07N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 6.5 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original     		PDF IPU07N03LA P-TO251-3-1 P-TO252-3-11 Q67042-S4150 07N03LA 07n03l 07N03LA 07N03 SMD TRANSISTOR MARKING code DD IPU07N03LA P-TO251-3-1 P-TO252-3-11

    Untitled

    Abstract: No abstract text available
    Text: IPP07N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 6.6 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPP07N03LB PG-TO220-3-1 07N03LB

    07N03LB

    Abstract: 07n03 07n03l Q67045-A5049
    Text: IPP07N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 6.6 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPP07N03LB PG-TO220-3-1 Q67045-A5049 07N03LB 07N03LB 07n03 07n03l Q67045-A5049

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265