NTE106
Abstract: No abstract text available
Text: NTE106 Silicon PNP Transistor Switching Transistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
|
Original
|
NTE106
200mA
NTE106
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating
|
Original
|
ZXTP5401Z
-150V
-600mA
ZXTN5551Z
ZXTP5401ZTA
D-81541
|
PDF
|
TS16949
Abstract: ZXTN5551Z ZXTP5401Z ZXTP5401ZTA marking p01 sot89 P01 SOT89
Text: ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating
|
Original
|
ZXTP5401Z
-150V
-600mA
ZXTN5551Z
ZXTP5401ZTA
-160etex
D-81541
TS16949
ZXTN5551Z
ZXTP5401Z
ZXTP5401ZTA
marking p01 sot89
P01 SOT89
|
PDF
|
KSP44M
Abstract: No abstract text available
Text: KSP44M KSP44M High Voltage Transistor • Collector-Emitter Voltage : BVCEO= 400V • Collector Dissipation : PC Max. =1.2W TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
|
Original
|
KSP44M
O-126
KSP44M
|
PDF
|
ZXTN5551Z
Abstract: TS16949 ZXTP5401Z ZXTN5551ZTA
Text: ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features • 160V rating
|
Original
|
ZXTN5551Z
600mA
ZXTP5401Z
ZXTN5551ZTA
D-81541
ZXTN5551Z
TS16949
ZXTP5401Z
ZXTN5551ZTA
|
PDF
|
KSP44M
Abstract: No abstract text available
Text: KSP44M KSP44M High Voltage Transistor • Collector-Emitter Voltage : BVCEO= 400V • Collector Dissipation : PC Max. =1.2W TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value
|
Original
|
KSP44M
O-126
KSP44M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package
|
Original
|
DXT5551
ZXTN5551Z
600mA
ZXTP5401Z
ZXTN5551ZTA
ZXTN555
D-81541
|
PDF
|
Ksp44 data
Abstract: transistor KSP44 data
Text: KSP44M/45M NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAG E TRANSISTOR • C ollector-E m itter Voltage: VCeo=KSP44: 400V KSP45: 350V • C ollector D issipation: Pc m ax =1.2W TO -126 ABSO LU TE M AXIMUM RATINGS (TA=25°C) C haracteristic C ollector Base Voltage
|
OCR Scan
|
KSP44M/45M
KSP44:
KSP45:
KSP44
KSP45
Ksp44 data
transistor KSP44 data
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.
|
Original
|
RD10MMS2
870MHz
RD10MMS2
12Wtyp,
870MHz
800MHz-band
|
PDF
|
2N2894
Abstract: 2N2894CSM 12w 98 transistor
Text: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
|
Original
|
2N2894CSM
100MHz
300ms,
2N2894
2N2894CSM
12w 98 transistor
|
PDF
|
12W SOT23
Abstract: 2N2484 2N2484CSM 2n2484 reliability data 2N2484 SOT23
Text: SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
|
Original
|
2N2484CSM
30MHz
140kHz
12W SOT23
2N2484
2N2484CSM
2n2484 reliability data
2N2484 SOT23
|
PDF
|
12w 98 transistor
Abstract: No abstract text available
Text: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
|
Original
|
2N2894CSM
300ms,
2N2894CSM"
2N2894CSM
2N2894CSM-JQR-B
5/30m
400MHz
12w 98 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
|
Original
|
2N2484CSM
2N2484CSM"
2N2484CSM
2N2484CSM-JQR-B
|
PDF
|
ic 4081 datasheet
Abstract: IC 4081 data sheet features of ic 4081 ic 4081 ic and 4081 2N2894 4081 datasheet 4081 transistor coms 4081 ic and 4081 datasheet
Text: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) • SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) • HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS:
|
Original
|
2N2894
200mA
-30mA
ic 4081 datasheet
IC 4081 data sheet
features of ic 4081
ic 4081
ic and 4081
2N2894
4081 datasheet
4081 transistor
coms 4081
ic and 4081 datasheet
|
PDF
|
|
|
MRF660
Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040
|
Original
|
2N2876
2N3137
2N3375
2N3553
2N3632
2N3733
2N3924
2N3926
2N3927
2N3948
MRF660
MRF485
KTC1969
MRF150MP
MRF496
2SC2029B
MRF648
MRF646
MRF429MP
MRF648 Data Sheet
|
PDF
|
2N3250CSM
Abstract: No abstract text available
Text: SEME 2N3250CSM LAB GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) FEATURES 3 2 • SILICON PLANAR EPITAXIALPNP TRANSISTOR 0.76 ± 0.15
|
Original
|
2N3250CSM
-10mA
2N3250CSM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEME 2N3250CSM LAB GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) FEATURES 3 2 • SILICON PLANAR EPITAXIALPNP TRANSISTOR 0.76 ± 0.15
|
Original
|
2N3250CSM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N2484 SEME LAB NPN SILICON AMPLIFIER TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.48 (0.019) 0.41 (0.016)
|
Original
|
2N2484
300ms,
|
PDF
|
10KW
Abstract: 2N2484
Text: SEME 2N2484 LAB NPN SILICON AMPLIFIER TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.48 (0.019) 0.41 (0.016)
|
Original
|
2N2484
300ms,
10KW
2N2484
|
PDF
|
12w 5d
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES
|
OCR Scan
|
2SC3629
2SC3629
520MHz,
12w 5d
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SILICON PNP TRANSISTOR 2N3963 • General Purpose PNP Silicon Transistor • Low Power Amplifier Applications • Hermetic TO18 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage
|
Original
|
2N3963
-200mA
06mW/Â
86mW/Â
300us,
O-206AA)
|
PDF
|
2N3963
Abstract: No abstract text available
Text: SILICON PNP TRANSISTOR 2N3963 • General Purpose PNP Silicon Transistor • Low Power Amplifier Applications • Hermetic TO18 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage
|
Original
|
2N3963
-200mA
300us,
O-206AA)
2N3963
|
PDF
|
2C746
Abstract: No abstract text available
Text: GENERAL PURPOSE DUAL SILICON NPN TRANSISTOR 2C746 • Dual Silicon Planar Transistor • Hermetic TO77 MO-002AF Metal Package. • Ideally suited for General Purpose, AC and Transducer Amplifier and DC Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
|
Original
|
2C746
MO-002AF)
500mW
600mW
2C746
|
PDF
|
2C746
Abstract: No abstract text available
Text: GENERAL PURPOSE DUAL SILICON NPN TRANSISTOR 2C746 • Dual Silicon Planar Transistor • Hermetic TO77 MO-002AF Metal Package. • Ideally suited for General Purpose, AC and Transducer Amplifier and DC Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
|
Original
|
2C746
MO-002AF)
500mW
600mW
2C746
|
PDF
|
