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    TRANSISTOR 1.2W Search Results

    TRANSISTOR 1.2W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1.2W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE106

    Abstract: No abstract text available
    Text: NTE106 Silicon PNP Transistor Switching Transistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V


    Original     		PDF NTE106 200mA NTE106

    Untitled

    Abstract: No abstract text available
    Text: ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating


    Original     		PDF ZXTP5401Z -150V -600mA ZXTN5551Z ZXTP5401ZTA D-81541

    TS16949

    Abstract: ZXTN5551Z ZXTP5401Z ZXTP5401ZTA marking p01 sot89 P01 SOT89
    Text: ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating


    Original     		PDF ZXTP5401Z -150V -600mA ZXTN5551Z ZXTP5401ZTA -160etex D-81541 TS16949 ZXTN5551Z ZXTP5401Z ZXTP5401ZTA marking p01 sot89 P01 SOT89

    KSP44M

    Abstract: No abstract text available
    Text: KSP44M KSP44M High Voltage Transistor • Collector-Emitter Voltage : BVCEO= 400V • Collector Dissipation : PC Max. =1.2W TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF KSP44M O-126 KSP44M

    ZXTN5551Z

    Abstract: TS16949 ZXTP5401Z ZXTN5551ZTA
    Text: ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features • 160V rating


    Original     		PDF ZXTN5551Z 600mA ZXTP5401Z ZXTN5551ZTA D-81541 ZXTN5551Z TS16949 ZXTP5401Z ZXTN5551ZTA

    KSP44M

    Abstract: No abstract text available
    Text: KSP44M KSP44M High Voltage Transistor • Collector-Emitter Voltage : BVCEO= 400V • Collector Dissipation : PC Max. =1.2W TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value


    Original     		PDF KSP44M O-126 KSP44M

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package


    Original     		PDF DXT5551 ZXTN5551Z 600mA ZXTP5401Z ZXTN5551ZTA ZXTN555 D-81541

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.


    Original     		PDF RD10MMS2 870MHz RD10MMS2 12Wtyp, 870MHz 800MHz-band

    2N2894

    Abstract: 2N2894CSM 12w 98 transistor
    Text: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


    Original     		PDF 2N2894CSM 100MHz 300ms, 2N2894 2N2894CSM 12w 98 transistor

    12W SOT23

    Abstract: 2N2484 2N2484CSM 2n2484 reliability data 2N2484 SOT23
    Text: SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR


    Original     		PDF 2N2484CSM 30MHz 140kHz 12W SOT23 2N2484 2N2484CSM 2n2484 reliability data 2N2484 SOT23

    12w 98 transistor

    Abstract: No abstract text available
    Text: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


    Original     		PDF 2N2894CSM 300ms, 2N2894CSM" 2N2894CSM 2N2894CSM-JQR-B 5/30m 400MHz 12w 98 transistor

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR


    Original     		PDF 2N2484CSM 2N2484CSM" 2N2484CSM 2N2484CSM-JQR-B

    ic 4081 datasheet

    Abstract: IC 4081 data sheet features of ic 4081 ic 4081 ic and 4081 2N2894 4081 datasheet 4081 transistor coms 4081 ic and 4081 datasheet
    Text: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) • SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) • HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS:


    Original     		PDF 2N2894 200mA -30mA ic 4081 datasheet IC 4081 data sheet features of ic 4081 ic 4081 ic and 4081 2N2894 4081 datasheet 4081 transistor coms 4081 ic and 4081 datasheet

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N3250CSM LAB GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) FEATURES 3 2 • SILICON PLANAR EPITAXIALPNP TRANSISTOR 0.76 ± 0.15


    Original     		PDF 2N3250CSM

    Untitled

    Abstract: No abstract text available
    Text: 2N2484 SEME LAB NPN SILICON AMPLIFIER TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.48 (0.019) 0.41 (0.016)


    Original     		PDF 2N2484 300ms,

    10KW

    Abstract: 2N2484
    Text: SEME 2N2484 LAB NPN SILICON AMPLIFIER TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.48 (0.019) 0.41 (0.016)


    Original     		PDF 2N2484 300ms, 10KW 2N2484

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRANSISTOR 2N3963 • General Purpose PNP Silicon Transistor • Low Power Amplifier Applications • Hermetic TO18 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage


    Original     		PDF 2N3963 -200mA 06mW/Â 86mW/Â 300us, O-206AA)

    2N3963

    Abstract: No abstract text available
    Text: SILICON PNP TRANSISTOR 2N3963 • General Purpose PNP Silicon Transistor • Low Power Amplifier Applications • Hermetic TO18 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage


    Original     		PDF 2N3963 -200mA 300us, O-206AA) 2N3963

    2C746

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL SILICON NPN TRANSISTOR 2C746 • Dual Silicon Planar Transistor • Hermetic TO77 MO-002AF Metal Package. • Ideally suited for General Purpose, AC and Transducer Amplifier and DC Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		PDF 2C746 MO-002AF) 500mW 600mW 2C746

    2C746

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL SILICON NPN TRANSISTOR 2C746 • Dual Silicon Planar Transistor • Hermetic TO77 MO-002AF Metal Package. • Ideally suited for General Purpose, AC and Transducer Amplifier and DC Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		PDF 2C746 MO-002AF) 500mW 600mW 2C746

    Ksp44 data

    Abstract: transistor KSP44 data
    Text: KSP44M/45M NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAG E TRANSISTOR • C ollector-E m itter Voltage: VCeo=KSP44: 400V KSP45: 350V • C ollector D issipation: Pc m ax =1.2W TO -126 ABSO LU TE M AXIMUM RATINGS (TA=25°C) C haracteristic C ollector Base Voltage


    OCR Scan     		PDF KSP44M/45M KSP44: KSP45: KSP44 KSP45 Ksp44 data transistor KSP44 data

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    12w 5d

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES


    OCR Scan     		PDF 2SC3629 2SC3629 520MHz, 12w 5d