TRANSISTOR 1005 2G Search Results

TRANSISTOR 1005 2G Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 1005 2G Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FPD1500SOT89CE Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m	Original	FPD1500SOT8 FPD1500SOT89CE FPD1500SOT89CE mx1500 42dBm FPD1500SOT89CE: FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 4506 gh Transistor BJT 547 b 1850G	PDF
Transistor AC 51 0865 75 834 Abstract: No abstract text available Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m	Original	FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE mx1500ï FPD1500SOT89CESR FPD1500SOT89PCK FPD1500SOT89CESQ 85GHz DS111103 Transistor AC 51 0865 75 834	PDF
FPD1500SOT89E Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263 Text: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm	Original	FPD1500SOT89E FPD1500SOT8 FPD1500SOT89E 25mx1500m FPD1500SOT89E: FPD1500SOT89PCK FPD1500SOT89ESQ FPD1500SOT89ESR est 0114 FPD1500SOT89 MIL-HDBK-263	PDF
FPD1500SOT89CESR Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263 Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89E FPD1500SOT89CE EB1500SOT89CE-BC FPD1500SOT89CESR FPD1500SOT89E MIL-HDBK-263	PDF
Transistor AC 51 0865 75 730 Abstract: No abstract text available Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm	Original	FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE 25Pmx1500Pm FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 85GHz DS130523 Transistor AC 51 0865 75 730	PDF
FPD1500SOT89 Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89CESR FPD1500SOT89CESQ FPD1500SOT89CESB DS090612 FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh	PDF
FPD750SOT343E Abstract: FPD750 FPD750SOT343 0402CS FPD750SOT343CE toko 1201 Text: FPD750SOT343E FPD750SOT34 3E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive	Original	FPD750SOT343E FPD750SOT34 OT343 1850MHz) 2002/95/EC) 20dBm 37dBm FPD750SOT343CE mx750 FPD750SOT343E FPD750 FPD750SOT343 0402CS toko 1201	PDF
FPD6836SOT343E Abstract: 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540 Text: FPD6836SOT343E FPD6836SOT3 43ELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive	Original	FPD6836SOT343E FPD6836SOT3 43ELow-Noise OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343E mx750 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540	PDF
0402CS Abstract: FPD750SOT343 transistor 24 GHz Text: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm	Original	FPD750SOT343 FPD750SOT34 OT343 FPD750SOT343 mx750 1850MHz) 20dBm 37dBm 2002/95/EC) 11kaged 0402CS transistor 24 GHz	PDF
FPD750SOT343 Abstract: 0402CS 3.5GHz BJT Text: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm	Original	FPD750SOT343 FPD750SOT34 OT343 FPD750SOT343 mx750 1850MHz) 20dBm 37dBm 2002/95/EC) EB750SOT343-BE 0402CS 3.5GHz BJT	PDF
TRANSISTOR 726 Abstract: VSP8 Package NJG1507R Text: NJG1507R SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1507R is a GaAs SPDT switch IC which exhibits low loss and high isolation, and ideally suitable for T/R switch of the digital wireless phone. This switch is operated in the wide frequency range from 50MHz to 3.0GHz at low operating voltage from +2.5V with	Original	NJG1507R NJG1507R 50MHz 22dBm 27dBm TRANSISTOR 726 VSP8 Package	PDF
C5-10PF Abstract: spdt gaas 1ghz NJG1506R Text: NJG1506R SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1506R is a GaAs SPDT switch IC which features low loss, high isolation and low control current and ideally suitable for switching the RF receiving circuit of cellular phone. NJG1506R is operated in the wide frequency range from	Original	NJG1506R NJG1506R 50MHz 28dBm 19dBm 10dBm C5-10PF spdt gaas 1ghz	PDF
VSP8 Package Abstract: NJG1506R Text: NJG1506R SPDT SWITCH GaAs MMIC •GENERAL DESCRIPTION NJG1506R is a GaAs SPDT switch IC which features low loss, high isolation and low control current and ideally suitable for switching the RF receiving circuit of cellular phone. NJG1506R is operated in the wide frequency range from	Original	NJG1506R NJG1506R 50MHz 28dBm 19dBm 10dBm VSP8 Package	PDF
C5-10PF Abstract: spdt gaas 1ghz NJG1509F RF TRANSISTOR 2GHZ Text: NJG1509F SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1509F is a SPDT switch GaAs MMIC which features low loss, high isolation and low operating voltage, and ideally suitable for the T/R switch of digital wireless phone handsets. This switch is operated in the wide frequency range from	Original	NJG1509F NJG1509F 50MHz 22dBm. 27dBm 22dBm C5-10PF spdt gaas 1ghz RF TRANSISTOR 2GHZ	PDF

transistor bc 564 Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540 Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive	Original	FPD6836SOT343 FPD6836SOT3 OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343 mx750 FPD6836SOT343E EB6836SOT343CE-BA transistor bc 564 bc 5578 0604HQ OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540	PDF
FPD750 Abstract: FPD750SOT343CE 3.5GHz BJT Text: FPD750SOT343CE FPD750SOT34 3CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive	Original	FPD750SOT34 FPD750SOT343CE OT343 FPD750SOT343CE mx750 1850MHz) 85GHz D750SOT343CECESR FPD750SOT343CECESQ FPD750SOT343CECESB FPD750 3.5GHz BJT	PDF
transistor BC 245 Abstract: transistor bc 241 transistor BC 56 transistor BF 245 transistor bc 33 BC 114 transistor transistor bf 179 transistor BC-245 TRANSISTOR BC 181 bc 162 transistor Text: Summary of Types SIEMENS ICs for Satellite Receivers Page Type Function TDA 6130-5X4 2-GHz Mixer 22 TDA 6140-5X TV SAT IF-FM-Demodulator 30 TDA 6142-5X FM-Demodulator for SAT TV with Switchable Input 38 TDA 6151 -5;5X Satellite-Video IC 48 TDA 6160-2S Multistandard Sound IF	OCR Scan	6130-5X4 6140-5X 6142-5X 6160-2S 6160-2X 6170X 6180X BCX51 transistor BC 245 transistor bc 241 transistor BC 56 transistor BF 245 transistor bc 33 BC 114 transistor transistor bf 179 transistor BC-245 TRANSISTOR BC 181 bc 162 transistor	PDF
smd transistor marking 2J Abstract: TRANSISTOR SMD MARKING CODE 2b TRANSISTOR SMD MARKING CODE 1d smd code LY smd transistor marking ly SMD transistor MARKING CODE 2B qml-38535 Text: R E V IS IO N S LTR DESCRIPTION DATE APPROVED YR-M O-DA REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING REV SHEET 10 AMSCN/A 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 Tuan Nguyen CHECKED BY Larry Shaw	OCR Scan	5962-E309-97 D3D17D smd transistor marking 2J TRANSISTOR SMD MARKING CODE 2b TRANSISTOR SMD MARKING CODE 1d smd code LY smd transistor marking ly SMD transistor MARKING CODE 2B qml-38535	PDF
Untitled Abstract: No abstract text available Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability	OCR Scan	bb53T31 BFQ67W OT323 UBC870 OT323. OT323	PDF
ai 757 Abstract: transistors ai 757 invertor P 721 transistor ai 757 NJG1508F INVERTOR APPLICATION NOTE Text: 4 ÆÊt A NJG1508F GaAs SPDT SWITCH IC GENERAL DESCRIPTION • PACKAGE OUTLINE NJG1508F is a GaAs SPDT switch IC featuring a low loss,a high isolation and a low control current. In the wide frequency range from 100MHz to 3GHz,The this IC operates at a low voltage from 2.5V.	OCR Scan	NJG1508F NJG1508F 100MHz 19dBm 10dBm ai 757 transistors ai 757 invertor P 721 transistor ai 757 INVERTOR APPLICATION NOTE	PDF
jrc 0720 Abstract: JRC 2100 8 pin JRC 2100 2100 jrc 1165 JRC transistor 5-1147 0720 JRC sy 171 2300 jrc Catalog JRC Text: NJG1506R GaAs SPDT SWITCH IC • GENARAL DESCRIPTION NJG1506R is a GaAs SPDT switch IC featuring a low loss, a high isolation and a low control current. In the wide frequency range from 100MHz to 3GHz, this IC operates at a low voltage from 2.5V. Avery small package is adopted.	OCR Scan	NJG1506R NJG1506R 100MHz 19dBm jrc 0720 JRC 2100 8 pin JRC 2100 2100 jrc 1165 JRC transistor 5-1147 0720 JRC sy 171 2300 jrc Catalog JRC	PDF
Untitled Abstract: No abstract text available Text: NJG1506R GaAs SPDT SWITCH IC • GENARAL DESCRIPTION NJG1506R is a GaAs SPDT switch IC featuring a low loss, a high isolation and a low control current. In the wide frequency range from 100MHz to 3GHz, this IC operates at a low voltage from 2.5V. Avery small package is adopted.	OCR Scan	NJG1506R 100MHz NJG1506R 19dBm	PDF
JRC 2100 Abstract: JRC 2100 8 pin 2100 jrc transistor 2S D 716 1136 jrc P 721 g f IC JRC 1226 pc 817 UA 758 pc zo 107 Text: NJG1509F GaAs SPDT SWITCH IC • GENERAL DESCRIPTION NJG1509F is a GaAs SPDT switch IC operating from 100MHz to 3GHz. This Switch features low loss, high isolation and low voltage operation from +2.5V. It is suited for the T/R switch of digital cordless phone.	OCR Scan	NJG1509F NJG1509F 100MHz 22dBm. 27dBm 22dBm 22dBm JRC 2100 JRC 2100 8 pin 2100 jrc transistor 2S D 716 1136 jrc P 721 g f IC JRC 1226 pc 817 UA 758 pc zo 107	PDF
JRC 2100 Abstract: Catalog JRC JRC 2100 8 pin rule jem -1170 2100 jrc jrc 1351 jrc 0728 1351 jrc vcu 2100 33D5 T Text: NJG1507R GaAs SPDT SWITCH 1C I GENERAL DESCRIPTION NJG1507R is a GaAs SPDT switch IC operating from 100MHz to 3GHz. This Switch features low loss, high isolation and low voltage operation from +2.5V. It is suited for the T/R switch of digital cordless phone.	OCR Scan	NJG1507R NJG1507R 100MHz 22dBm. 27dBm 22dBm JRC 2100 Catalog JRC JRC 2100 8 pin rule jem -1170 2100 jrc jrc 1351 jrc 0728 1351 jrc vcu 2100 33D5 T	PDF

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TRANSISTOR 1005 2G Search Results

TRANSISTOR 1005 2G Result Highlights (5)

TRANSISTOR 1005 2G Datasheets Context Search

FPD1500SOT89CE

Transistor AC 51 0865 75 834

FPD1500SOT89E

FPD1500SOT89CESR

Transistor AC 51 0865 75 730

FPD1500SOT89

FPD750SOT343E

FPD6836SOT343E

0402CS

FPD750SOT343

TRANSISTOR 726

C5-10PF

VSP8 Package

C5-10PF

transistor bc 564

FPD750

transistor BC 245

smd transistor marking 2J

Untitled

ai 757

jrc 0720

Untitled

JRC 2100

JRC 2100