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    TRANSISTOR 100MHZ Search Results

    TRANSISTOR 100MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 100MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DUAL TRANSISTOR

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.


    Original     		PDF OT-363 QW-R218-024 DUAL TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD22K Preliminary DUAL TRANSISTOR DIGITAL TRANSISTOR BUILT-IN RESISTORS  DESCRIPTION The UTC UD22K is a dual transistor, including an NPN transistor and a PNP transistor.  FEATURES * Built-in bias resistors that implies easy ON/OFF applications.


    Original     		PDF UD22K UD22K UD22KG-AL6-R OT-363 QW-R221-020

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD2H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION The UTC UD2H are Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate interference.


    Original     		PDF OT-26 QW-R218-018

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE SAT  TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


    Original     		PDF 2SB1424 2SB1424 2SB1424G-x-AB3-R OT-89 QW-R208-044

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.


    Original     		PDF OT-26 QW-R218-020

    n24 transistor

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are


    Original     		PDF MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are


    Original     		PDF MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R OT-363 QW-R218-017

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    DSA00897

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are


    Original     		PDF MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R OT-363 QW-R218-017 DSA00897

    2SB1424

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 Preliminary LOW VCE SAT „ PNP SILICON TRANSISTOR TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


    Original     		PDF 2SB1424 2SB1424 2SB1424L 2SB1424G 2SB1424-x-AB3-R 2SB1424L-x-AB3-R 2SB1424G-x-AB3-R OT-89 QW-R208-044

    2N3904

    Abstract: 2n3904 TRANSISTOR PNP 2n3904 transistor 2N3904, transistor 2N3904 plastic 22N3904 data sheet transistor 2n3906 03 transistor 2N3904 SOT-23 2N3904 transistor data sheet free download
    Text: 2N3904 TRANSISTOR NPN PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors TO-92 FEATURES NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with


    Original     		PDF 2N3904 2N3906 OT-23 MMBT3904 2N3904 2n3904 TRANSISTOR PNP 2n3904 transistor 2N3904, transistor 2N3904 plastic 22N3904 data sheet transistor 2n3906 03 transistor 2N3904 SOT-23 2N3904 transistor data sheet free download

    2n3904 transistor

    Abstract: 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 2N3906 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP
    Text: TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with


    Original     		PDF 2N3904 O--92 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz 2n3904 transistor 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP

    2n3906 equivalent transistor

    Abstract: 2N3906 NPN Transistor Transistor 2N3904 2N3906 SOT-23 2N3906 tr 2n3906 transistor 2n3906 applications PNP switching transistor 2N3906 mhz 2N3906 TO-92 2n3906 PNP transistor DC current gain
    Text: 2N3906 TRANSISTOR PNP PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors TO-92 FEATURES PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with


    Original     		PDF 2N3906 2N3904 OT-23 MMBT3906 2n3906 equivalent transistor 2N3906 NPN Transistor Transistor 2N3904 2N3906 SOT-23 2N3906 tr 2n3906 transistor 2n3906 applications PNP switching transistor 2N3906 mhz 2N3906 TO-92 2n3906 PNP transistor DC current gain

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA13 Preliminary NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MMBTA13 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC MAS = 350 mW


    Original     		PDF MMBTA13 MMBTA13 MMBTA13L-AE3-R MMBTA13G-AE3-R OT-23 QW-R206-006

    DUAL TRANSISTOR

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ FEATURES *Two MMBT2907A chips in an SMT package. *Transistor elements are independent, eliminating interference. *High collector current. Ic = -500mA „ EQUIVALENT CIRCUITS


    Original     		PDF IMT17 MMBT2907A -500mA IMT17L-AG6 IMT17G-AG6-R OT-26 QW-R215-006 DUAL TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PZTA14 NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC PZTA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Power Dissipation: PC MAX = 1W „ ORDERING INFORMATION


    Original     		PDF PZTA14 PZTA14 PZTA14L-AA3-R PZTA14G-AA3-R OT-223 QW-R207-004,

    mpsa13l

    Abstract: mpsa13 MPSA13G
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free


    Original     		PDF MPSA13 MPSA13 MPSA13L-AB3-R MPSA13G-AB3-R OT-89 MPSA13L-T92-B MPSA13G-T92-B MPSA13L-T92-K MPSA13G-T92-K MPSA13L-T92-A-B mpsa13l MPSA13G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA13 Preliminary NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION 3 The UTC MMBTA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC MAS = 350 mW


    Original     		PDF MMBTA13 MMBTA13 OT-23 O-236) MMBTA13G-AE3-R QW-R206-006

    UN1518

    Abstract: UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) *Pb-free plating product number: UN1518L „ ORDERING INFORMATION Order Number


    Original     		PDF UN1518 UN1518L UN1518-AE3-R UN1518L-AE3-R OT-23 QW-R206-088 UN1518 UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor

    MPSA13L

    Abstract: utc mpsa13
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA13 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V „ ORDERING INFORMATION Order Number Normal Lead Free


    Original     		PDF MPSA13 MPSA13 OT-89 MPSA13-AB3-R MPSA13L-AB3-R MPSA13G-AB3-R MPSA13-T92-B MPSA13L-T92-B MPSA13G-T92-B MPSA13-T92-K MPSA13L utc mpsa13

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA113 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA113 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V „ ORDERING INFORMATION Ordering Number Normal Lead Free


    Original     		PDF MPSA113 MPSA113 OT-89 MPSA113-AB3-R MPSA113L-AB3-R MPSA113G-AB3-R MPSA113-T92-B MPSA113L-T92-B MPSA113G-T92-B MPSA113-T92-K

    Untitled

    Abstract: No abstract text available
    Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA


    Original     		PDF IMX17 2SD1484K 500mA OT-26 QW-R215-001 500mA, 100mA -20mA, 100MHz

    MPSA13L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free


    Original     		PDF MPSA13 MPSA13 MPSA13L-AB3-R MPSA13G-AB3-R OT-89 MPSA13L-T92-B MPSA13G-T92-B MPSA13L-T92-K MPSA13G-T92-K QW-R208-001 MPSA13L

    diode r207

    Abstract: PZTA14
    Text: UNISONIC TECHNOLOGIES CO., LTD PZTA14 NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC PZTA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Power Dissipation: PC MAX = 1W Lead-free: PZTA14L


    Original     		PDF PZTA14 PZTA14 PZTA14L PZTA14G PZTA14-AA3-R PZTA14L-AA3-R PZTA14G-AA3-R OT-223 QW-R207-004 diode r207