LB122T
Abstract: HLB122T to-126 npn switching transistor 400v
Text: HI-SINCERITY Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching
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HT200208
HLB122T
HLB122T
O-126
183oC
217oC
260oC
LB122T
to-126 npn switching transistor 400v
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HLB122I
Abstract: transistor k 2837
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2003.04.16 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching
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HE9030
HLB122I
HLB122I
O-251
transistor k 2837
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HLB122T
Abstract: transistor k 2837
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/3 HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching
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HT200208
HLB122T
HLB122T
O-126
transistor k 2837
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HLB122I
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching
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HE9030
HLB122I
HLB122I
O-251
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HLB122D
Abstract: TP 1322 Transistor C G 774 6-1 transistor k 2837
Text: HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HLB122D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122D is a medium power transistor designed for use in switching
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HD200206
HLB122D
HLB122D
O-126ML
183oC
217oC
260oC
TP 1322
Transistor C G 774 6-1
transistor k 2837
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PT 1017
Abstract: transistor mark code H1 TL 434 transistor k 2837 HLB122I y1 marking code transistor Y2 MARKING MARK Y1 Transistor
Text: HI-SINCERITY Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching
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HE9030
HLB122I
HLB122I
O-251
183oC
217oC
260oC
PT 1017
transistor mark code H1
TL 434
transistor k 2837
y1 marking code transistor
Y2 MARKING
MARK Y1 Transistor
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Untitled
Abstract: No abstract text available
Text: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5311DW1T1
MUN5316DW1T1
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2sc3088
Abstract: No abstract text available
Text: Ordering number:ENN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3088] 15.6
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ENN1017B
2SC3088
00V/4A
VCBO800V)
2SC3088]
PW300
Cycle10%
2sc3088
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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transistor 131 8D
Abstract: transistor k 3728 QBE+61.2+dp2
Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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BLY90
transistor 131 8D
transistor k 3728
QBE+61.2+dp2
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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PHP12N10E
T0220AB
PHP12N1OE
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable lor surface mounting. Using ’trench’ technology the device
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BUK7618-55
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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c38 transistor
Abstract: 2160 transistor Johanson Piston Trimmer
Text: ERICSSON ^ PTB 20235 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a
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BATC100)
c38 transistor
2160 transistor
Johanson Piston Trimmer
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Untitled
Abstract: No abstract text available
Text: I Ordering num ber:EN 1017B j 2SC3088 NPN Triple D iffused Planar Silicon Transistor 500V/4A Switching Regulator Applications Features . High breakdown voltage VCBq ^800V . Fast switching speed. . Wide ASO. Absolute Maxiaua Ratings at Ta=25°C Collector-to-Base Voltage
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1017B
2SC3088
00V/4A
300ps,
0D2DD47
T707b
G0S004Ã
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2SC3088
Abstract: No abstract text available
Text: Ordering number: EN 1017B I _ 2SC3088 No.1017B NPN Triple Diffused Planar Silicon Transistor Fo r Sw i t c h i n g Re g u l a t o r s Features . High breakdown voltage VCB0£800V . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25°C
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1017B
2SC3088
PVK300ps,
2SC3088
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YTFP450
Abstract: No abstract text available
Text: 45E ]> TOSHIBA DISCRETE/OPTO TOSHIBA FIELD EFFECT TRANSISTOR • SOTTESO 0017102 3 «T0S4 - YTFP450 SILICON N CHANNEL MOS TYPE (tt - MOSI) '■3? INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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YTFP450
500nA
250uA
20ki5)
00A/us
YTFP450
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Untitled
Abstract: No abstract text available
Text: bbSB'iai Q0HS1DB b4T « A P X Philips Semiconductors _ Product specification NPN 1 GHz video transistor BFQ166 AHER PHILIPS/ DIS CRETE FEATURES b?E ]> PINNING • Low output capacitance • High gain bandwidth product
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BFQ166
OT223
MB843S
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transistor c516
Abstract: c516 transistor bu108
Text: TBA920S J \ _ HORIZONTAL COMBINATION The TBA920 is a monolithic integrated circuit intended for television receivers with transistor, thyris tor, or tube-equipped output stages. It combines the following functions: - noise gated sync separator
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TBA920S
TBA920
transistor c516
c516 transistor
bu108
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