tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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Power247TM,
tip122 tip127 audio board
BUK 450-1000
Transistor Selection Guide
tip122 tip127 audio amp
FJL6920 equivalent
car amp
TIP41/TIP42
kse13009
TRANSISTOR TIP31
FJL6920
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TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
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2SB1132
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES 1 * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) TO-252 *Pb-free plating product number: 2SB1132L
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2SB1132
OT-89
2SB1132
-500mA/-50mA)
O-252
2SB1132L
2SB1132-x-AB3-R
2SB1132L-x-AB3-R
2SB1132-x-TN3-R
2SB1132L-x-TN3-R
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CSR Bluecore2
Abstract: xcs921 CDRH3D16 CSR Bluetooth CSR Bluetooth Driver CL-54
Text: December 12, 2003 Ver. S2 XCS921 Series Driver Transistor Built-In Synchronous Step-Down DC/DC Converters for CSR, BC2 Preliminary APPLICATIONS z For CSR Bluetooth chip sets BC2 z Bluetooth headset P channel driver transistor built-in Synchronous N channel switching transistor built-in
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XCS921
300mA
OT-25
CSR Bluecore2
CDRH3D16
CSR Bluetooth
CSR Bluetooth Driver
CL-54
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BLA1011-200
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain
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M3D379
BLA1011-200
OT502A
f4825
BLA1011-200
BP317
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702 TRANSISTOR smd
Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N smd transistor marking B5 702 N smd transistor TRANSISTOR SMD MARKING CODE LF 70.2 TRANSISTOR smd 702 k TRANSISTOR smd 702 transistor smd code
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23 Philips Semiconductors Product specification PNP switching transistor BSR12 FEATURES • Low current max. 100 mA handbook, halfpage
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M3D088
BSR12
BSR12
MAM256
BSR12/C
ICP1020807
01-Jul-2011
702 TRANSISTOR smd
TRANSISTOR SMD MARKING CODE 702
702 TRANSISTOR smd SOT23
TRANSISTOR SMD 702 N
smd transistor marking B5
702 N smd transistor
TRANSISTOR SMD MARKING CODE LF
70.2 TRANSISTOR smd
702 k TRANSISTOR smd
702 transistor smd code
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Nov 21 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain
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M3D379
BLA1011-200
OT502A)
BLA1011-200
OT502A
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BLA1011-200
Abstract: SMD0508
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 May 15 2002 Mar 18 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A
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M3D379
BLA1011-200
OT502A
SCA74
613524/06/pp12
BLA1011-200
SMD0508
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Mar 02 2001 Apr 17 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A
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M3D379
BLA1011-200
OT502A
BLA1011-200
613524/04/pp12
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486DX-CPU
Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling
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multilayer ceramic capacitor philips
Abstract: BLA1011-200
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Apr 17 2001 May 15 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A
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M3D379
BLA1011-200
OT502A
613524/05/pp12
multilayer ceramic capacitor philips
BLA1011-200
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SMD0508
Abstract: BLA1011-200
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2002 Mar 18 2003 Nov 11 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A
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M3D379
BLA1011-200
OT502A
SCA75
R77/07/pp10
SMD0508
BLA1011-200
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Untitled
Abstract: No abstract text available
Text: preliminary data version 03/03 V23990-P434-F-PM flow PACK 1, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition
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V23990-P434-F-PM
D81359
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utc 2030
Abstract: marking 2G MMBTA55 MMBTA56 MMBTA56-AE3-R MMBTA56L MMBTA56L-AE3-R 4 1020 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 *Pb-free plating product number: MMBTA56L ORDERING INFORMATION Order Number Normal
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MMBTA56
350mW
OT-23
MMBTA56L
MMBTA56-AE3-R
MMBTA56L-AE3-R
QW-R206-090
utc 2030
marking 2G
MMBTA55
MMBTA56
MMBTA56-AE3-R
MMBTA56L
MMBTA56L-AE3-R
4 1020 transistor
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160N04
Abstract: MP-25ZT nec a640
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note
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NP160N04TDG
NP160N04TDG
NP160N04TDG-E1-AY
NP160N04TDG-E2-AY
O-263-7pin
MP-25ZT)
160N04
MP-25ZT
nec a640
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EIA-418D
Abstract: No abstract text available
Text: 2N2944AUB – 2N2946AUB PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944AUB through 2N2946AUB PNP silicon transistor device is military qualified up to
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2N2944AUB
2N2946AUB
MIL-PRF-19500/382
2N2944AUB
2N2946AUB
2N2944A
2N2946A
MIL-PRF-19500/382
T4-LDS-0236-1,
EIA-418D
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2SC4774
Abstract: 2SC4774-AL3-R 2SC4774L-AL3-R c4g TRANSISTOR transistor C4G
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA 3 FEATURES * Very low output-on resistance (RON). * Low capacitance. 1 2 SOT-323 *Pb-free plating product number: 2SC4774L ORDERING INFORMATION
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2SC4774
OT-323
2SC4774L
2SC4774-AL3-R
2SC4774L-AL3-R
QW-R220-017
2SC4774
2SC4774-AL3-R
2SC4774L-AL3-R
c4g TRANSISTOR
transistor C4G
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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transistor 131 8D
Abstract: transistor k 3728 QBE+61.2+dp2
Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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BLY90
transistor 131 8D
transistor k 3728
QBE+61.2+dp2
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TRANSISTOR FS 10 TM
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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PHP15N06E
T0220AB
TRANSISTOR FS 10 TM
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-eifect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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PHP15N06E
T0220AB
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PDF
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GIS 110 kV
Abstract: N25Y
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench' technology the device
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BUK7620-55
SQT404
GIS 110 kV
N25Y
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2sa1630
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SA1630 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1630 is a resin sealed silicon PNP epitaxial type transistor OUTLINE DRAWING Uni> designed for low frequency voltage amplify application.
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2SA1630
2SA1630
2SC4266.
-30mA
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