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    TRANSISTOR 1047 VOLTAGE RATING Search Results

    TRANSISTOR 1047 VOLTAGE RATING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1047 VOLTAGE RATING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NSL5TT1 Advance Information High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Symbol Max Unit Collector-Emitter Voltage VCEO


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    Untitled

    Abstract: No abstract text available
    Text: MMBTA92LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Symbol MMBTA92 Unit Collector −Emitter Voltage Rating


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    PDF MMBTA92LT1 MMBTA92

    AN9322

    Abstract: RFP70N06 ronan
    Text: A Combined Single Pulse and Repetitive UIS Rating System Application Note A rating system for Unclamped Inductive Switching in PowerMOS transistors already widely accepted and implemented on Intersil PowerMOS transistor data sheets can be applied to a wide range of applications very easily


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    4N47

    Abstract: 4N48 4N49 OLH1047
    Text: OLH1047/1048/1049 Hermetic Phototransistor Optocoupler ISO LINK 8 2 0.390 ±0.005 7 6 5 7 BASE s ANODE 0.320 Max. OLH XXXX XXYY 0.300 Typ. COLLECTOR 1 6 2 3 0.020 Min. CATHODE 5 0.125 Min. 0.018 ±0.002 SCHEMATIC Features ♦ Current transfer ratio guaranteed


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    PDF OLH1047/1048/1049 3000Vdc OLH1047/ 4N47 4N48 4N49 OLH1047

    capacitor 474k 400v

    Abstract: weller soldering station pe-6197 12v dc cdi schematic diagram switched capacitor filter handbook mf10 jim williams ccfl transistor equivalent book FOR D 1047 e bike motor controller 12v dc cdi schematic diagram for cdi MBR115P
    Text: LINEAR TECHNOLOGY JUNE 1992 IN THIS ISSUE . . . COVER ARTICLE Introducing the LT1227: A Video Amplifier for All Seasons . 1 William H. Gross Editor's Page . 2 VOLUME II NUMBER 2 Introducing the LT1227: A Video Amplifier for All Seasons by William H. Gross


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    PDF LT1227: LTC1153 LTC1063 LTC1047: capacitor 474k 400v weller soldering station pe-6197 12v dc cdi schematic diagram switched capacitor filter handbook mf10 jim williams ccfl transistor equivalent book FOR D 1047 e bike motor controller 12v dc cdi schematic diagram for cdi MBR115P

    transistor 1548 b

    Abstract: transistor 1548 transistor D 1047
    Text: Satellite C om m unications Power Transistor PH 1600-14 14 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing CW Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C


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    PDF Curren-14 5b4220S 00012b? transistor 1548 b transistor 1548 transistor D 1047

    d 1047 transistor

    Abstract: transistor 1047 transistor 1047 D transistor 1047 voltage rating T2x TRANSISTOR Switching Transistor
    Text: Philips Semiconductors Product specification NPN switching transistor PMST4401 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and linear amplification,


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    PDF PMST4401 OT323 PMST4403. PMST4401 OT323) LBB26 d 1047 transistor transistor 1047 transistor 1047 D transistor 1047 voltage rating T2x TRANSISTOR Switching Transistor

    transistor buz 350

    Abstract: d 1047 transistor
    Text: SIEMENS BUZ 350 SIPMOS Power Transistor O • N channel • Enhancement mode ' • Avalanche-rated V ’ iOb'SS fé 3 P in i Pin 2 G Type Vbs BUZ 350 200 V b 22 A f h S on 0.12 w Pin 3 D S Package Ordering Code TO-218 AA C67078-S3117-A2 Maximum Ratings


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    PDF O-218 C67078-S3117-A2 O-218AA transistor buz 350 d 1047 transistor

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PU4312 PU4312 Silicon NPN/PNP Epitaxial Planar Type Package Dimensions Power Amplifier, Switching • Features • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEisatj • G ood lin earity o f DC cu rre n t gain (Iife )


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    PDF PU4312 DQ17G4b P114312

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Others A N 90C00 Series Transistor Arrays 4-circuit • Overview T h e A N 90C 00 series transistor arrays are monolithic ICs which have 4 transistor em itters com m only used. They are provided in 9-pin plastic SIL packages and can improve mounting density by miniaturization of the sets.


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    PDF 90C00 50ams AN90C10 600/jtA 500/i

    transistor 1047 BL 1

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TY PE HN1B01F U nit in mm A U D IO FREQU ENCY G ENERA L PURPOSE AMPLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1.6-0.1 Q Q1 : —El2 -E33 • High Voltage and High Current : V q e o = _ 50V, I q = —150mA Max. • High hjrg : h]TE = 120~400


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    PDF HN1B01F --150mA 150mA transistor 1047 BL 1

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 533 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R 2=10ki2 Ordering Code Pin Configuration XCs Q62702-C2382 1=B Package II CO o Marking BCR 533 LU II


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    PDF 10ki2) Q62702-C2382 OT-23 Thermal01 fi53SbQS

    k 246 transistor fet

    Abstract: transistor BD 246 transistor BD 110 d 1047 transistor a 1046 transistor
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


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    PDF BUK7675-55 SQT404 k 246 transistor fet transistor BD 246 transistor BD 110 d 1047 transistor a 1046 transistor

    HF 331 transistor

    Abstract: No abstract text available
    Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


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    PDF BLY92A HF 331 transistor

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y X $ / T ransistors FMW6 FMW6 NPN '><J = l> h 7 > ' s Z $ iS J l l# lliffl/R F Amplifier Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor vfiilS l/D im e n sio n s Unit : mm Str >4 V ;V v4i ~ r • 1) ^ — >'f — 5— T — JUK ) "j *t — v T '


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    PDF 500MHz 0V/10mA 20mA/4mA

    Q62702-F1359

    Abstract: 12L marking transistor 7g mmic+SMD+amplifier+marking+code+19s
    Text: SIEMENS BFG 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF OT-223 Q62702-F1359 900MHz Q62702-F1359 12L marking transistor 7g mmic+SMD+amplifier+marking+code+19s

    3N142

    Abstract: ta7306 RCA-3N142 M098 100CC IU 1047 General Electric Solid State rca transistor RCA Solid State Power Transistor
    Text: dT G E SOLID STATE de |3B75D6] i o o m i a i 1 I '11" _ Small-Signal MOSFETs 3875081 G E SOLID STATE 01E 14989 Silicon Insulated-Gate Field-Effect Transistor 3N142 D T - 3 1 *2-s For Industrial and Military Applications to 175 MHz Features: • Large dynamic range


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    PDF 3N142 92CS-I4096 3N142 ta7306 RCA-3N142 M098 100CC IU 1047 General Electric Solid State rca transistor RCA Solid State Power Transistor

    8060 transistor

    Abstract: NT 407 F TRANSISTOR mps 442 0533 OHMITE MPS-H24
    Text: MPS-H24 silicon NPN SILICON VH F TRANSISTOR NPN SILICON EP ITA X IA L TRANSISTOR . . . designed for V H F mixer applications in T V receivers. Excellent Conversion Gain — 24 dB (Typ) Low Collector-Base Capacitance — Ccb = 0.36 pF (Max) High Current-Gain—Bandwidth Product —


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    PDF MPS-H24 470pF 8060 transistor NT 407 F TRANSISTOR mps 442 0533 OHMITE MPS-H24

    d 1047 transistor

    Abstract: BLY92A yl 1042 transistor t33d transistor A106 ferroxcube wideband hf choke philips Trimmer 60 pf
    Text: II DtiE d N AMER P HILIPS/DISCRETE 86D 0 1952* D 7 • oom no s 3 3 4*9 BLY92A * _ A_ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


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    PDF bly92a OT-48/2. d 1047 transistor BLY92A yl 1042 transistor t33d transistor A106 ferroxcube wideband hf choke philips Trimmer 60 pf

    NE556-1

    Abstract: NE5561 8-pin smps power control ic inverter buck current-fed
    Text: Product specification Philips Semiconductors Linear Products Switched-mode power supply control circuit DESCRIPTION NE/SE5561 PIN CONFIGURATION The NE5561/SE5561 is a control circuit for use in switched-mode power supplies. It contains an internal temperature- compensated


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    PDF NE/SE5561 NE5561/SE5561 NE5561 NE556-1 8-pin smps power control ic inverter buck current-fed

    inverter NE5561

    Abstract: NE5561 LCC package 0889 SE5561FE NE556-1 12v DC led liting circuits pulse width modulator for smps SE556 NE5561D NE5561N
    Text: Product specification P hilips Sem iconductors Linear Products Switched-mode power supply control circuit NE/SE5561 PIN CONFIGURATION DESCRIPTION The NE5561 /SE5561 is a control circuit for use In switched-mode power supplies. It contains an internal temperature- compensated


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    PDF NE/SE5561 NE5561 SE5561 711062b inverter NE5561 LCC package 0889 SE5561FE NE556-1 12v DC led liting circuits pulse width modulator for smps SE556 NE5561D NE5561N

    Untitled

    Abstract: No abstract text available
    Text: f 4832 HARRIS Dual 5V Regulator With Logic Controlled Startup For Automotive Applications AD VA N CE INFO RM ATIO N February 1991 Features • Description Dual 5V Regulator The TA14832 is a Dual 5 Voltage Regulator IC in standard silicon bipolar technology. It is supplied with features that


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    PDF TA14832 150/lH 22/1F

    si1029x

    Abstract: No abstract text available
    Text: Si1029X_ Vishay Siliconix New Product Complementary N- and P-Channel 60-V D-S MOSFET TrenchFE T PRODUCT SUMMARY M OSFETs VDS(V) N-Channel P-Channel 60 -60 rDS(on) (Q ) l0 (m A ) 1.40 @ Vqq = 10 V 500 3 @ VGS = 4.5 V


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    PDF Si1029X S-03518-- 11-Apr-01 SM029X S-03518--Rev. 11-Apr-01

    LB1615

    Abstract: 3037A sanyo motor 3 phase sanyo 3 phase motor
    Text: SANYO SEMICONDUCTOR CORP 15E D g 7 CH 7 Q7 L> 0 Q0 B B 44 b LB1615 3037A ; • M o n o lit h ic D ig ita l IC 3-Phase DD Motor Driver 1811A The LB1615 is a 3-phase DD motor driver IC ideally suited for use in VTR capstan motor drive, drum motor drive, reel motor drive, and floppy disk motor drive


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    PDF LB1615 LB1615 LB16I5 3037A sanyo motor 3 phase sanyo 3 phase motor