transistor 10mhz 60w
Abstract: transistor 38W 12.5W bypass transistor QPP-307
Text: QPP-307 60W; 2110-2170MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-307 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver or output stage of linear RF power amplifiers for cellular base stations.
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QPP-307
2110-2170MHz
QPP-307
H11860)
H11861)
transistor 10mhz 60w
transistor 38W
12.5W bypass transistor
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transistor 10mhz 60w
Abstract: 60W POWER AMPLIFIER CIRCUIT MAPLST2122-060CF transistor f1
Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 4/6/2005 MAPLST2122-060CF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.
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MAPLST2122-060CF
28VDC,
-45dB
096MHz)
2110MHz)
transistor 10mhz 60w
60W POWER AMPLIFIER CIRCUIT
MAPLST2122-060CF
transistor f1
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Crss RF
Abstract: No abstract text available
Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 2/18/03 MAPLST2122-060WF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.
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MAPLST2122-060WF
28VDC,
-45dB
096MHz)
2110MHz)
Crss RF
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Cree Microwave
Abstract: UGF21060 UGF21060F UGF21060P
Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21060
17GHz,
MRF21060/MRF21060S.
UGF21060
Cree Microwave
UGF21060F
UGF21060P
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transistor 10mhz 60w
Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21060
17GHz,
MRF21060/MRF21060S.
700mA
30kHz
2140MHz
84MHz
10MHz
UGF21060
transistor 10mhz 60w
UGF21060F
UGF21060P
mosfet class ab rf
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60W POWER AMPLIFIER
Abstract: UGF16060F UGF16060P UPF16060 transistor 10mhz 60w
Text: UPF16060 60W, 1.66 GHz, 26V Broadband RF Field Effect Transistor Power N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband Commercial and Industrial applications in the frequency band 1626 to 1660 MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA,
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UPF16060
16QAM,
400kHz)
600kHz)
540mA
1660MHz
UPF16060
60W POWER AMPLIFIER
UGF16060F
UGF16060P
transistor 10mhz 60w
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ
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BDY54
O-204AA)
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ
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BDY54
O-204AA)
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ATC100B
Abstract: MAPLST2122-090CF transistor f1
Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 MAPLST2122-090CF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power
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MAPLST2122-090CF
28VDC,
-45dB
096MHz)
2110MHz)
ATC100B
MAPLST2122-090CF
transistor f1
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Untitled
Abstract: No abstract text available
Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 2/18/2003 MAPLST2122-090WF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power
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MAPLST2122-090WF
28VDC,
-45dB
096MHz)
2110MHz)
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tf 115 250v 2a
Abstract: BUL53B
Text: BUL53BSM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA 11.5 2.0 0.25 3.5 1 3.0 3 FAST SWITCHING tf = 100ns 9.0 1.5 15.8 4.6 3.5 2 HIGH ENERGY RATING FEATURES 8.5 TO220 Ceramic Surface Mount Package
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BUL53BSM
100ns)
100mA
10MHz
tf 115 250v 2a
BUL53B
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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120v 10a transistor
Abstract: No abstract text available
Text: BDY90 MECHANICAL DATA NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 FEATURES 1.52 (0.06) 3.43 (0.135) 2 • • 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)
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BDY90
O-204AA)
120v 10a transistor
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Untitled
Abstract: No abstract text available
Text: BDY90 MECHANICAL DATA NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 • • 22.23 (0.875) max. 1 FEATURES 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)
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BDY90
O-204AA)
10MHz
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Untitled
Abstract: No abstract text available
Text: BUL53BSMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4 .1 4 0 .1 6 3 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )
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BUL53BSMD
100ns)
100mA
300ms
10MHz
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transistor bipolar driver schematic
Abstract: L9801 50W car power amplifier AN271 complementary bipolar transistor driver schematic Electronic car ignition circuit npn pnp transistor bipolar cross reference resistenc
Text: AN271 APPLICATION NOTE HIGH SIDE MONOLITHIC SWITCH IN MULTIPOWER-BCD TECHNOLOGY by C.Cini, C. Diazzi, D. Rossi, S. Stortii Recent advances in integrated circuit technology have allowed the realization of a new mixed process integrating isolated DMOS power transistors in combination with bipolar and CMOS signal structures on the same chip.
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AN271
transistor bipolar driver schematic
L9801
50W car power amplifier
AN271
complementary bipolar transistor driver schematic
Electronic car ignition circuit
npn pnp transistor bipolar cross reference
resistenc
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complementary bipolar transistor driver schematic
Abstract: L9801 12V DC to 19V dC converter schematic diagram
Text: APPLICATION NOTE HIGH SIDE MONOLITHIC SWITCH IN MULTIPOWER-BCD TECHNOLOGY b y C.Cin i, C. Diazzi, D. Ro ssi, S. Sto rti Recent advances in integrated circuit technology have allowed the realization of a new mixed process integrating isolated DMOS power transistors in
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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CLC431
Abstract: CLC432 CLC5665 698W
Text: N CLC5665 Low Distortion Amplifier with Disable General Description Features The CLC5665 is a low-cost, wideband amplifier that provides very low 2nd and 3rd harmonic distortion at 1MHz -89/-92dBc . The great slew rate of 1800V/ms, bandwidth of 90MHz (Av = +1) and
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CLC5665
CLC5665
-89/-92dBc)
800V/ms,
90MHz
20MHz
CLC431
CLC432
698W
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FUJITSU MICROWAVE TRANSISTOR
Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
Text: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band
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IMT-2000
FLL600IQ-2C
151mA
FUJITSU MICROWAVE TRANSISTOR
60W POWER AMPLIFIER CIRCUIT
Fujitsu GaAs FET application note
FLL600IQ-2
fujitsu power amplifier GHz
push pull class AB RF linear 1.3 GHz
4433B
GAAS FET AMPLIFIER f 10Mhz to 2 GHz
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VARIABLE POWER SUPPLY. 0 - 30V, LM723
Abstract: LM741 audio amplifiers IC LM741 timer circuit diagram lm35 sensor interfacing with adc0808 diagram LM338 TO-3 spice model LM741 AND LM386 Audio Amplifier lm1485 LM1084 spice LF351 op-amp audio equalizer smd code marking 162 sot23-5
Text: Welcome to National Semiconductor’s Summer 2000 Edition of the Linear/Mixed-Signal Designer’s Guide! Included in this guide are: • • • • • Alphanumeric index Product selection trees Product selection guides Package descriptions CD-ROM with complete datasheets, a pdf version of this guide, and other valuable information
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FUJITSU MICROWAVE TRANSISTOR
Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band
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FLL600IQ-3
60-Wpush-pull
117mA
FUJITSU MICROWAVE TRANSISTOR
understanding thermal basics for microwave power
Fujitsu GaAs FET application note
4433B
high power fet amplifier schematic
mmds passband filter
fll600iq
ATC 100A 4pF
push pull class AB RF linear 1.3 GHz
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LAB 250 LB
Abstract: No abstract text available
Text: Illl = & = Illl SEME BUL53B-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA • CERAMIC SURFACE MOUNT PACKAGE :- ► , • FULL MIL/AEROSPACE TEMPERATURE RANGE 2.0 3.5 < ► 4— * 9'f <-
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BUL53B-SM
100ns)
T0220
100mA
100mA
10MHz
LAB 250 LB
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UA78HGSC
Abstract: SL490DP N82S100 TCA280A ne5534h UA78HGS mw RADIO RECEIVER IC zn414 TCA280A equivalent MM58174 ML929DP
Text: V o ltag e R eg ulator S electio n C hart Positive Three Terminal Regulators Output Current§ Package + 5V + 6V + 8V + 12V + 15V + 18V + 24V TO-92 LM78L05ACZ — — _ _ LM78L12ACZ LM78L15ACZ 0.1A .0 — — TO-92 LM340LAZ-5 _ _ LM340LAZ-12 LM340LAZ-15
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LM78L05ACZ
LM78L12ACZ
LM78L15ACZ
LM340LAZ-5
LM340LAZ-12
LM340LAZ-15
LM2931Z5
LM78L05ACH
LM78L12ACH
LM78L15ACH
UA78HGSC
SL490DP
N82S100
TCA280A
ne5534h
UA78HGS
mw RADIO RECEIVER IC zn414
TCA280A equivalent
MM58174
ML929DP
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