TRANSISTOR 1150 Search Results

TRANSISTOR 1150 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 1150 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
diode gp 429 Abstract: HV400 Text: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty	Original	HVV1012-100 HVV1012-100 1025-1150Avionics 1025-1150MHz, 429-HVVi diode gp 429 HV400	PDF
Radar Abstract: diode gp 429 HV400 Text: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty	Original	HVV1012-100 HVV1012-100 1025-1150Avionics 1025-1150MHz, 429-HVVi Radar diode gp 429 HV400	PDF
Radar Abstract: diode gp 429 HV400 hvvi transistor 1150 Text: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,	Original	HVV1012-050 HVV1012-050 HVV1012-050MHz, Pulsed10 HVV1012-060 1025-1150MHz, 10sPACKAGE Radar diode gp 429 HV400 hvvi transistor 1150	PDF
NI-400 Abstract: diode gp 429 HV400 Text: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,	Original	HVV1012-050 HVV1012-050 HVV1012-050MHz, Pulsed10 HVV1012-060 1025-1150MHz, 10sPACKAGE NI-400 diode gp 429 HV400	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S800 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1012S800 is designed for L-Band avionics systems operating at 1025 to 1150 MHz.	Original	IB1012S800 IB1012S800 IB1012S800-REV-PR1-DS-REV-NC	PDF
str 6707 Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202 Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.	Original	M3D067 BF859 O-202 MBH794 O-202) SCA63 115002/00/03/pp8 str 6707 philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1012S50 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating	Original	IB1012S50 IB1012S50 IB1012S50-REV-NC-DS-REV-A	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S20 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1012S20 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating	Original	IB1012S20 IB1012S20 IB1012S20-REV-NC-DS-REV-NC	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S10 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1012S10 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating	Original	IB1012S10 IB1012S10 IB1012S10-REV-NC-DS-REV-B	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB1012S500 is designed for systems operating over the instantaneous bandwidth of 1025-1150 MHz. While operating in class C mode under DME pulsing	Original	IB1012S500 IB1012S500 IB1012S500-REV-NC-DS-REV-NC	PDF
2SA1444 equivalent Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992	Original	X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent	PDF
1000MP Abstract: No abstract text available Text: 1000MP 0.6 Watts, 18 Volts 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW The 1000MP is a COMMON EMITTER transistor capable of providing 0.6 Watt of Class A, RF output power to 1150 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization	Original	1000MP 1000MP	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S150 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor The high power pulsed avionics transistor part number IB1012S150 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating in class C mode under DME pulse conditions at	Original	IB1012S150 IB1012S150 IB1012S150-REV-NC-DS-REV-NC	PDF
transistor BD 512 Abstract: IB1012S1100 Text: Part Number: Integra IB1012S1100 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1012S1100 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating in class C mode under DME pulse conditions at	Original	IB1012S1100 IB1012S1100 IB1012S1100-REV-NC-DS-REV-A transistor BD 512	PDF

1015 TRANSISTOR DATASHEET Abstract: transistor 1015 transistor a 1015 1015 TRANSISTOR Text: 1015 MP 15 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes	Original	25oC2 1015 TRANSISTOR DATASHEET transistor 1015 transistor a 1015 1015 TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated	OCR Scan	SQQ300BA60 200ns) hrEfe750	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
Untitled Abstract: No abstract text available Text: TRANSISTOR MODULE SQP200A40/60 UL;E76102 M S Q D 2 0 0 A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for	OCR Scan	SQP200A40/60 E76102 400/600V CI022aS SQD200A	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F 1500 The RF Line M icrowave Pulse Power Transistor Motorola Preferred Device Designed for 1025-1150 MHz pulse common base amplifier applications such as DME. • 500 W PEAK . 1025-1150 MHz MICROWAVE POWER TRANSISTOR	OCR Scan	MRF1500	PDF
motorola 269-5 Abstract: z627 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor . . . designed for 1 0 25-1 150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 150 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR	OCR Scan	MRF10500 MRF10150 motorola 269-5 z627	PDF
2689* transistor Abstract: MRF1035 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor Designed for 10 25-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 70 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON	OCR Scan	MRF10500 MRF10350 376C00 MRF10070 2689* transistor MRF1035	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
QCA50AA100 Abstract: No abstract text available Text: TRANSISTOR MODULE QCA50AA100 U L ;E 76102 M is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. T he mounting base of the module is electrically isolated	OCR Scan	QCA50AA100 QCA50AA100 E76102 15Crt	PDF
Untitled Abstract: No abstract text available Text: 7 ^ 1 g M 3 00051*13 57T TRANSISTOR MODULE OCA15QA/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlin gton power transistor module with two high speed, high power Darlington transis tors. Each transistor has a reverse paral leled fast recovery diode.	OCR Scan	OCA15QA/QBB150A40/60 E76102 QCA150A QBB150A QCAI50A--Series-connected QBBI50A 400/600V QCA150A/QBB150A	PDF

TRANSISTOR 1150 Search Results

TRANSISTOR 1150 Result Highlights (5)

TRANSISTOR 1150 Datasheets Context Search

diode gp 429

Radar

Radar

NI-400

Untitled

str 6707

Untitled

Untitled

Untitled

Untitled

2SA1444 equivalent

1000MP

Untitled

transistor BD 512

1015 TRANSISTOR DATASHEET

Untitled

la 4440 amplifier circuit diagram 300 watt

Untitled

Untitled

motorola 269-5

2689* transistor

2sb504

QCA50AA100

Untitled