f tip42c
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP41C
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TIP42C
TIP42C
TIP41C
TIP42CL-TA3-x-T
TIP42CG-TA3-x-T
TIP42CL-TF3-x-T
TIP42CG-TF3-x-T
TIP42CL-TN3-x-R
TIP42CG-TN3-x-R
TIP42CL-TN3-x-T
f tip42c
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PNP transistor 263
Abstract: tip41c tip42c TIP42CL TIP42CL-TN3-T f tip42c TIP41C TIP42C TIP42C-TA3-T TIP42C-TN3-R TIP42C-TN3-T
Text: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP41C
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TIP42C
TIP42C
TIP41C
TIP42CL
TIP42C-TA3-T
TIP42CL-TA3-T
TIP42C-TN3-R
TIP42CL-TN3-R
TIP42C-TN3-T
TIP42CL-TN3-T
PNP transistor 263
tip41c tip42c
TIP42CL
TIP42CL-TN3-T
f tip42c
TIP41C
TIP42C-TA3-T
TIP42C-TN3-R
TIP42C-TN3-T
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2SC3835
Abstract: humidifier circuit switch NPN TC4125
Text: UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL RATING UNIT Collector-Base Voltage
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2SC3835
QW-R214-002
2SC3835
humidifier circuit
switch NPN
TC4125
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NR6020T4R7M
Abstract: R1245K003-TR R1245N NR6028T100M GRM32ER71A476 nr4018 Nippon capacitors NR4018T R1245N001 Taiyo 93-R 503
Text: R1245x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-269-120118 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output
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R1245x
EA-269-120118
R1245
Room403,
Room109,
NR6020T4R7M
R1245K003-TR
R1245N
NR6028T100M
GRM32ER71A476
nr4018
Nippon capacitors
NR4018T
R1245N001
Taiyo 93-R 503
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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95160
Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR 2sC5200, 2SA1943 2sa1943 2sa1943 amplifier transistor 2SA1943 100105 ic 2sa1943 transistor 2SC5200 2sc5200 amplifier circuit
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1943 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5200 APPLICATIONS
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2SA1943
-230V
2SC5200
95160
power amplifier 2sc5200 2sa1943 TRANSISTOR
2sC5200, 2SA1943
2sa1943
2sa1943 amplifier
transistor 2SA1943
100105 ic
2sa1943 transistor
2SC5200
2sc5200 amplifier circuit
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HM62W8511HC
Abstract: HM62W8511HCJP-10 HM62W8511HCLJP-10 Hitachi DSA00358
Text: HM62W8511HC Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1201 (Z) Preliminary Rev. 0.0 Sep. 20, 2000 Description The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
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HM62W8511HC
512-kword
ADE-203-1201
400-mil
36-pin
Equal2100
HM62W8511HCJP-10
HM62W8511HCLJP-10
Hitachi DSA00358
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Hitachi DSA00280
Abstract: No abstract text available
Text: HM62W8511HC Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1201A (Z) Preliminary Rev. 0.1 Jul. 13, 2001 Description The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
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HM62W8511HC
512-kword
ADE-203-1201A
400-mil
36-pin
D-85622
Hitachi DSA00280
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2N4449
Abstract: 2N2369AU
Text: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 317 Devices 2N2369A 2N2369AU 2N2369AUA 2N2369AUB Qualified Level 2N4449 2N4449U 2N4449UA 2N4449UB JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage
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MIL-PRF-19500/
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N4449
2N4449U
2N4449UA
2N4449UB
2N2369A;
2N4449
2N2369AU
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2N708
Abstract: 2N708 JANTX
Text: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/312 Devices Qualified Level 2N708 JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Total Power Dissipation
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MIL-PRF-19500/312
2N708
O-206AA)
-IB21
2N708
2N708 JANTX
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2N5153
Abstract: 2N5151 2N5151L 2N5153L
Text: TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 Devices Qualified Level 2N5151 2N5151L JAN JANTX JANTXV 2N5153 2N5153L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
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MIL-PRF-19500/545
2N5151
2N5151L
2N5153
2N5153L
2N5151L,
2N5153
2N5151
2N5151L
2N5153L
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2n3468
Abstract: 2N3468 JANTX
Text: TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 348 Devices Qualified Level 2N3467 2N3467L JAN JANTX JANTXV 2N3468 2N3468L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
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MIL-PRF-19500/
2N3467
2N3467L
2N3468
2N3468L
O-205AD)
2n3468
2N3468 JANTX
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2N3741
Abstract: 2N3740 1000C
Text: TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/441 Devices Qualified Level 2N3740 JAN JANTX JANTXV 2N3741 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
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MIL-PRF-19500/441
2N3740
2N3741
1000C
O-213AA)
2N3741
2N3740
1000C
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TO-206AB
Abstract: 2N3486A 2N3485A
Text: TECHNICAL DATA PNP SILICON SMALL SIGNAL TRANSISTOR Qualified per MIL-PRF-19500/392 Devices Qualified Level 2N3485A JAN JANTX JANTXV 2N3486A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
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MIL-PRF-19500/392
2N3485A
2N3486A
TO-206AB
2N3486A
2N3485A
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2N6287 JANTX
Abstract: 1000C 2N6286 2N6287
Text: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/505 Devices Qualified Level 2N6286 JANTX JANTXV 2N6287 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
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MIL-PRF-19500/505
2N6286
2N6287
1000C
O-204AA)
2N6287 JANTX
1000C
2N6286
2N6287
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3131 003314*1 3*1*1 M A P X Product specilication NPN 2 GHz wideband transistor 1 N Ar1ER PHILIPS/DISCRETE ^ DESCRIPTION BFW93 blE ]> PINNING NPN transistor in a plastic SOT37 envelope. PIN It is intended tor use in VHF and UHF applications, primarily
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bbS3131
BFW93
BFW93/02
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2SK926
Abstract: 2sk92 25RIA VQC10
Text: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE D E S C R IP T IO N 2SK926 The 2 S K 926 is N-channel MOS Field Effect Power PACKAGE DIMENSIONS Transistor designed for switching power supplies., D C -D C in mil irrxtert (inches)
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2SK926
2SK926
19BBM
2sk92
25RIA
VQC10
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MJ12010
Abstract: MR91S
Text: MOTOROLA SC XSTRS/R F 15 E 0 | t>3b72SM 00 05 1 0 3 2 | # MOTOROLA • SEMICONDUCTOR MJ12010 TECHNICAL DATA 10 A M P E R E HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . specifically designed for use in C R T deflection circuits. • Collector-Emitter Voltage — V c E X “ 950 Volts
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3b72SM
MJ12010
11II1
MJ12010
MR91S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL 2 S A 1201 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1201) POWER AMPLIFIER APPLICATIONS • High Voltage • High Transition Frequency : f p = 120MHz (Typ.) • P(} = 1~2W (Mounted on Ceramic Substrate)
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2SA1201
2SA1201)
--120V
120MHz
2SC2881
250mm2
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Untitled
Abstract: No abstract text available
Text: KSR2201 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R e sisto r Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor(R,=4.7KQ, R2=4.7KD) • Complement to KSR 1201 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
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KSR2201
1b4142
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pj47k
Abstract: pj 999 KSR1201 KSR2201
Text: PNP EPITAXIAL SILICON TRANSISTOR KSR2201 SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (Ri =4.7K£1, R2=4.7K£i) • C om plem ent to KSR 1201 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR2201
KSR1201
O-92S
-10nA,
pj47k
pj 999
KSR1201
KSR2201
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C4722
Abstract: No abstract text available
Text: \ P P I i l \ l l II'll \ < l l ’ Compensation for Linear Regulators by k io r.in In the m ajority o f low drop and qu asi low d rop com posite N P N -P N P ) regulators, the pass device or the pass device driver, is a lateral PN P transistor. The lateral PN P transistor is inherently a Ion' frequ en cy c u to ff device w ith a poor transient response.
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Untitled
Abstract: No abstract text available
Text: •€> P e FORWARD INTERNATIONAL ELECTRONICS LTD. 2SA950 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER * Complement To2SC212Q * Collector Current Ic=-800mA ABSOLUTE MAXIMUM RATINGS at Tanfc=25°C Characteristic
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2SA950
To2SC212Q
-800mA
-100uA
-100mA
-500mA
500mA
-20mA
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