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    TRANSISTOR 1211 Search Results

    TRANSISTOR 1211 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1211 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFG135 amplifier

    Abstract: BFG135 BFG135 - BFG135 MBB300
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor


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    BFG135 OT223 CGY2020G SCA50 647021/1200/01/pp12 BFG135 amplifier BFG135 BFG135 - BFG135 MBB300 PDF

    BFR540

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a


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    BFR540 BFR540 125006/03/pp16 MSB003 PDF

    BFG35

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor


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    BFG35 OT223 MSB002 OT223. 125006/03/pp16 BFG35 PDF

    BFG198

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a


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    BFG198 OT223 MSB002 OT223. CGY2020G SCA50 647021/1200/01/pp12 BFG198 PDF

    BUJ103AX

    Abstract: BP317 BU1706AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


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    BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX PDF

    BP317

    Abstract: BU1706AX BUJ204AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


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    BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


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    BUJ103A O220AB SCA60 135104/240/02/pp12 PDF

    BUJ204A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


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    BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A PDF

    str 6707

    Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.


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    M3D067 BF859 O-202 MBH794 O-202) SCA63 115002/00/03/pp8 str 6707 philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202 PDF

    transistor BUJ100

    Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
    Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V


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    BUJ100 transistor BUJ100 cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor cfl circuit PDF

    339 marking code SMD transistor

    Abstract: TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES • Power dissipation comparable to


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    M3D425 PDTA114EEF SC-89 OT490) PDTC114EEF. SCA60 115104/00/01/pp8 339 marking code SMD transistor TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358 PDF

    PDTA124XE

    Abstract: PDTC124
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES


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    M3D173 PDTA124XE SC-75 OT416) PDTC124XE. SCA55 117047/1200/01/pp8 PDTC124 PDF

    PHC20306

    Abstract: BP317 MS-012AA MAM118
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PHC20306 Complementary enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification Complementary enhancement mode MOS transistor


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    PHC20306 SC13b OT96-1 SCA54 135108/00/01/pp8 PHC20306 BP317 MS-012AA MAM118 PDF

    sot416 marking code 26

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES


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    M3D173 PDTA123JE PDTA123JE MAM345 SC-75 OT416) SCA55 117047/1200/01/pp8 sot416 marking code 26 PDF

    BY206

    Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION


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    M3D088 BRY61 MGL167 MGC421 SCA63 115002/00/03/pp8 BY206 BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note PDF

    TSP 817

    Abstract: BUK9830-30 PHT6N03LT
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PHT6N03LT TrenchMOS transistor Logic level FET Product specification Supersedes data of September 1997 File under Discrete Semiconductors, SC13a November 1997 Philips Semiconductors Product specification TrenchMOS transistor


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    PHT6N03LT SC13a OT223 SCA56 137087/600/02/pp11 TSP 817 BUK9830-30 PHT6N03LT PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES


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    M3D173 PDTC123JE SC-75 OT416) PDTA123JE. MGA893 PDTC123JE SCA56 117047/1200/01/pp8 PDF

    BC337

    Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


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    BUK107-50DS SC13a SCA54 137087/1200/02/pp12 BC337 BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage PDF

    PDTC123ET

    Abstract: PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET


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    M3D088 PDTA123ET PDTC123ET. SCA55 117047/1200/01/pp8 PDTC123ET PDF

    MX0912B351Y

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A


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    MX0912B351Y OT439A SCA53 127147/00/02/pp12 MX0912B351Y PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BLV2347 UHF power transistor Objective specification File under Discrete Semiconductors, SC08b Philips Semiconductors 1997 Oct 14 PHILIPS Philips Semiconductors Objective specification UHF power transistor BLV2347 FEATURES PINNING - SOT468A


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    BLV2347 SC08b OT468A SCA55 i27067/oo/oi/P PDF

    Philips electrolytic 106 screw

    Abstract: STR aluminium electrolytic capacitor
    Text: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y


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    RX1214B350Y RX1214B350Y SCA53 127147/00/02/pp12 Philips electrolytic 106 screw STR aluminium electrolytic capacitor PDF

    MARKING SMD pnp TRANSISTOR ec

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PDTC124XEF NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor


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    PDTC124XEF PDTC124XEF SCA64 5002/00/02/pp8 MARKING SMD pnp TRANSISTOR ec PDF