PBSS4160U
Abstract: BCP52 BCX52 PBSS5160U asot323
Text: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 09 August 2004 Objective data sheet 1. Product profile 1.1 General description PNP low VCEsat (BISS) transistor in a SOT323 (SC-70) plastic package. NPN complement: PBSS4160U. 1.2 Features •
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PBSS5160U
OT323
SC-70)
PBSS4160U.
BCP52
BCX52.
PBSS4160U
BCX52
PBSS5160U
asot323
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PBSS4160U
Abstract: PBSS5160U
Text: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 11 August 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.
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PBSS5160U
OT323
SC-70)
PBSS4160U.
PBSS4160U
PBSS5160U
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RN1325A
Abstract: RN1321A RN1322A RN1323A RN1324A RN1326A RN1327A RN2321A RN2327A
Text: RN1321A~RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current driving is possible.
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RN1321ARN1327A
RN1321A
RN1322A
RN1323A
RN1324A
RN1325A
RN1326A
RN1327A
RN2321A
RN2327A
RN1324A
RN1327A
RN2327A
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RN1321A
Abstract: RN1322A RN1323A RN1324A RN1325A RN1326A RN1327A RN2321A RN2327A
Text: RN1321A~RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z High current driving is possible.
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RN1321ARN1327A
RN1321A
RN1322A
RN1323A
RN1324A
RN1325A
RN1326A
RN1327A
RN2321A
RN2327A
RN1324A
RN1327A
RN2327A
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Untitled
Abstract: No abstract text available
Text: RN1321A~RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current driving is possible.
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RN1321ARN1327A
RN1321A
RN1322A
RN1323A
RN1324A
RN1325A
RN1326A
RN1327A
RN2321A
RN2327A
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RN1322A
Abstract: RN1323A RN1324A RN1325A RN1326A RN1327A RN2321A RN2324A RN2327A RN1321A
Text: RN1321A~RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1321A,RN1322A,RN1323A,RN2324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current driving is possible.
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RN1321ARN1327A
RN1321A
RN1322A
RN1323A
RN2324A
RN1325A
RN1326A
RN1327A
RN2321A
RN2327A
RN1324A
RN1327A
RN2324A
RN2327A
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Untitled
Abstract: No abstract text available
Text: RN1321A~RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z High current driving is possible.
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RN1321ARN1327A
RN1321A
RN1322A
RN1323A
RN1324A
RN1325A
RN1326A
RN1327A
RN2321A
RN2327A
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HT3088A
Abstract: ht3088 Rhythm Percussion Generator percussion generator HT-3088a IC percussion CMOS drum generator h 9645 drum sound ic key16
Text: HT3088A 8-Rhythm Generator And 8-Percussion Instrument Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current 8 percussion instruments • • • 8 rhythms 3Hz LED flash 24 pin dual-in-line package
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HT3088A
HT3088A
KEY16)
KEY16
KEY16,
KEY10
KEY11
KEY12
KEY13
KEY14
ht3088
Rhythm Percussion Generator
percussion generator
HT-3088a
IC percussion
CMOS drum generator
h 9645
drum sound ic
key16
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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c4460
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in Switched Mode Power Supplies SMPS , motor
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PHD10N10E
OT428
c4460
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Response AA0482
Abstract: 49/Response AA0482
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this
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DSP56303
Response AA0482
49/Response AA0482
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684 k 100
Abstract: BFT93 BFR93 BFR93A TRANSISTOR D 1765 lc 945 p transistor NPN
Text: bbSBTBl 0 0 £5 3*15 TDM HIAPX — N AUER PHILIPS/DISCRETE b?E » PNP 5 GHz wideband transistor Philips Semiconductors — DESCRIPTION Product specification ^ BFT93 ^ PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF
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BFT93
BFR93
BFR93A.
684 k 100
BFT93
BFR93A
TRANSISTOR D 1765
lc 945 p transistor NPN
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CHN 645
Abstract: transistor chn 115 chn 726 MRF511 chn 706 CHN 612 CHN 851 chn 625 CHN 650 transistor chn 726
Text: MRF511 SILICON l ’h e R ,F L i n e HIGH FREQUENCY TRANSISTOR NPN S IL IC O N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed specifically for broadband applications requiring low distortion characteristics and noise figure. Specified for use in C A T V applications.
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MRF511
CHN 645
transistor chn 115
chn 726
MRF511
chn 706
CHN 612
CHN 851
chn 625
CHN 650
transistor chn 726
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TAG 8907
Abstract: lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671 BFR93
Text: Philips Semiconductors •■ 71 10 05 b d O b ^ h l S IS ■ P H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in
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711005b
BFT93
BFR93
BFR93A.
TAG 8907
lc 945 p transistor
BFT93
1348 transistor
B 1446 transistor
B 1449 transistor
2F PNP SOT23
lc 945 transistor
SiS 671
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Untitled
Abstract: No abstract text available
Text: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF
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BFT93
BFR93
BFR93A.
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Untitled
Abstract: No abstract text available
Text: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )
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2SB1412
2SB1386
2SD2118
2SD2166.
SC-62
3B1326/2SB1436
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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DARLINGTON TRANSISTOR ARRAYS pu1501
Abstract: PU1501 PU4471 pu1601 PU4135 PU7000 PU3127 pu4126 PU4128 PU7456
Text: Transistors Selection Guide by Applications and Functions I Power Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) PU4000 Series 8 Pin -SIP Package (D72) (D73) Equivalent Circuit ^ ^ " \S tr u c tu r e PUA3000 Series I 10 Pin *S IP Package (D74)
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PU3000
PUA3000
PU4000
PU3110
PU3210
PU4110
PU4210
PU4410
PU4510
PU4310
DARLINGTON TRANSISTOR ARRAYS pu1501
PU1501
PU4471
pu1601
PU4135
PU7000
PU3127
pu4126
PU4128
PU7456
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PDF
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Untitled
Abstract: No abstract text available
Text: VOLTAGE CONTROLLED OSCILLATOR TOM9100 9 0 0 -1 4 0 0 MHz Available as: TOM9100, 4 Pin TO-8 T4 TON9100-3, 4 Pin Surface Mount (SM3) TOP9100-4, 4 Pin Flatpack (FP4) B X09100, Connectorized Housing (H1) Features • ■ ■ ■ Low Noise Bipolar Transistor
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OM9100
OM9100,
ON9100-3,
OP9100-4,
X09100,
MIN00
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2N7221 JANTX
Abstract: IQR 2400 2N7221 IRFM340 JANTXV2N7221
Text: Data Sheet No. PD-9.490C INTERNATIONAL RECTIFIER \ I & R \ REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM34Q 2 INI7221 JANTX2N7221 JANTXV2N7221 [REF: MIL-S-195QO/596 400 Volt, 0.55 Ohm HEXFET Product Summary The HEXFET® technology is the key to International
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IRFM340
JANTXV2N7221
MIL-S-19SOO/59S]
irfm340d
irfm340u
O-254
MIL-S-19500
I-332
2N7221 JANTX
IQR 2400
2N7221
IRFM340
JANTXV2N7221
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marking 93A
Abstract: transistor marking code 1325 b 11061
Text: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 BFR 93A R2s Q62702-F1086 1= B ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1086
OT-23
900MHz
marking 93A
transistor marking code 1325
b 11061
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