2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
|
Original
|
PDF
|
3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
|
MS-012AA
Abstract: PHK12NQ03LT
Text: PHK12NQ03LT TrenchMOS logic level FET Rev. 01 — 22 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1technology. Product availability: PHK12NQ03LT in SOT96-1 SO8 .
|
Original
|
PDF
|
PHK12NQ03LT
M3D315
PHK12NQ03LT
OT96-1
OT96-1,
MS-012AA
|
HP optocoupler 3000
Abstract: E55361 HCPL-3000 V01L V02H 5965-3584E
Text: OPTOCOUPLERS H Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current IO2 2.0 A Peak, 0.6 A Continuous IO1 (1.0 A Peak, 0.5 A Continuous) • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at
|
Original
|
PDF
|
HCPL-3000
HCPL-3000
HP optocoupler 3000
E55361
V01L
V02H
5965-3584E
|
Untitled
Abstract: No abstract text available
Text: SI4884 TrenchMOS logic level FET Rev. 01 — 15 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI4884 in SOT96-1 SO8 .
|
Original
|
PDF
|
SI4884
M3D315
SI4884
OT96-1
OT96-1,
MBK187
MBB076
|
Untitled
Abstract: No abstract text available
Text: PI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PI4884 in SOT96-1 SO8 .
|
Original
|
PDF
|
PI4884
M3D315
PI4884
OT96-1
OT96-1,
|
Untitled
Abstract: No abstract text available
Text: PI4884 TrenchMOS logic level FET Rev. 01 — 15 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PI4884 in SOT96-1 SO8 .
|
Original
|
PDF
|
PI4884
M3D315
PI4884
OT96-1
OT96-1,
MBK187
MBB076
|
SI4884
Abstract: MS-012AA
Text: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .
|
Original
|
PDF
|
SI4884
M3D315
SI4884
OT96-1
OT96-1,
MS-012AA
|
ultra low igss
Abstract: PMN23UN
Text: PMN23UN µTrenchMOS ultra low level FET Rev. 01 — 16 June 2004 M3D302 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • TrenchMOS™ technology
|
Original
|
PDF
|
PMN23UN
M3D302
OT457
ultra low igss
PMN23UN
|
E55361
Abstract: HCPL-3000 V01L V02H
Text: H Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current IO2 2.0 A Peak, 0.6 A Continuous IO1 (1.0 A Peak, 0.5 A Continuous) • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at VCM = 600 V
|
Original
|
PDF
|
HCPL-3000
HCPL-3000
E55361
V01L
V02H
|
PHK12NQ03LT
Abstract: No abstract text available
Text: PHK12NQ03LT N-channel TrenchMOS logic level FET Rev. 02 — 02 March 2004 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low on-state resistance
|
Original
|
PDF
|
PHK12NQ03LT
M3D315
OT96-1
MBB076
PHK12NQ03LT
|
V2bF
Abstract: Digital Alarm Clock digital clock with alarm STM-16 TX3S35 TX3S36 TX5S34
Text: TX5S34, TX3S35, TX3S36 2.5 Gb/s Optical Transmitter Module Nanovation’s 1510nm Supervise Receive Photoelectronic Module incorporates a positive-intrinsic-negative PIN diode or a field effect transistor (FET) as well as an IC main amplifier, shaper and equalizer. The product, which can be used for DWDM
|
Original
|
PDF
|
TX5S34,
TX3S35,
TX3S36
1510nm
V2bF
Digital Alarm Clock
digital clock with alarm
STM-16
TX3S35
TX5S34
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
PDF
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
2n4427 MOTOROLA
Abstract: 2N4427
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4427 The R F Line 1 W - 1 7 5 MHz NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH FREQUENCY TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator N PN SILIC O N applications in m ilita ry and industrial equipm ent. Suitable fo r use
|
OCR Scan
|
PDF
|
2N4427
2n4427 MOTOROLA
2N4427
|
|
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
|
OCR Scan
|
PDF
|
|
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
|
OCR Scan
|
PDF
|
CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT428 PIN SYMBOL PARAMETER MAX. UNIT Drain-source voltage Drain current DC Total power dissipation Drain-source on-state resistance 60 12 50 0.15 V A W n MIN.
|
OCR Scan
|
PDF
|
PHD3055E
OT428
|
d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .
|
OCR Scan
|
PDF
|
2SK2503
RK7002
TC363TS
DTC314TS
TC114G
100mA
TA124G
DTC144G
d2396
TRANSISTOR PNP B1443
D2396 equivalent
B1569A
TRANSISTORS PNP 50 V 1 A B1443
B1186A
transistor c5147
b1344
transistor equivalent b1443
K2460
|
transistor marking R2s
Abstract: AMI siemens BFR93AW k150t
Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA 1=B Q62702-F1489 h R2s m BFR 93AW ro ESP: Electrostatic discharge sensitive device, observe handling precaution!
|
OCR Scan
|
PDF
|
Q62702-F1489
OT-323
900MHz
transistor marking R2s
AMI siemens
BFR93AW
k150t
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-Em itter Voltage C ollector-Base Voltage Em itter-Base Voltage Symbol Value Unit v CEO 50 Vdc VCBO 60 Vdc v EBO 6.0 Vdc Collector Current — Continuous
|
OCR Scan
|
PDF
|
MPS6428
b3b75SS
|
Untitled
Abstract: No abstract text available
Text: Wfipl m L ftm HEW LETT PACKARD Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current I q 2 2 . 0 A Peak, 0 . 6 A Continuous I0 1 ( 1 . 0 A Peak, 0 . 5 A Continuous) • 1.5 kV/|is Minimum Common
|
OCR Scan
|
PDF
|
HCPL-3000
HCPL-3000
|
Untitled
Abstract: No abstract text available
Text: H EW LETT PACKARD 0PT 0C 0U P L E R S m Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current Iq 2 2 . 0 A Peak, 0 . 6 A Continuous I01 (1.0 A Peak, 0.5 A Continuous) • 1.5 kV/jis Minimum Common
|
OCR Scan
|
PDF
|
HCPL-3000
HCPL-3000
00157b0
|
Untitled
Abstract: No abstract text available
Text: 0PT0C0UPLERS What HEW LETT I "KM P A C K A R D Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 F eatures D escription • High Output Current The H CPL-3000 c o n sists o f a Silicon-doped GaAs LED optically coupled to an integ rated circuit
|
OCR Scan
|
PDF
|
HCPL-3000
CPL-3000
|
smd transistor xf
Abstract: smd 809 x transistor blt50 4F smd transistor transistor 2222 smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F
Text: P h ilip ^ e m ic o n d u c to r ^ ^ B i 711D Ö 2b G D b 'iB b ö 142 H 1 P H IN ^ P jjo d u c ^ p e c ific a tjo n UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION BLT50 QUICK REFERENCE DATA
|
OCR Scan
|
PDF
|
711062b
BLT50
OT223
PINNING-SOT223
MEA222
UEA223
smd transistor xf
smd 809 x transistor
blt50
4F smd transistor
transistor 2222
smd transistor 809
philips Trimmer 60 pf
transistor 3B1 smd
UHF TRANSISTOR
transistor 4F
|