BC868
Abstract: BC868-25 marking Code philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 2003 Dec 02 2004 Nov 08 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC868
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M3D109
BC868
SCA76
R75/07/pp9
BC868
BC868-25
marking Code philips
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BC868
Abstract: BC868-25
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 02 2004 Nov 08 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC868 FEATURES
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M3D109
BC868
R75/07/pp9
BC868
BC868-25
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200w power amplifier circuit diagram
Abstract: AN1385 LDMOS digital ISL21400 MRF9080
Text: LDMOS Transistor Bias Control in Basestation RF Power Amplifiers Using Intersil’s ISL21400 Application Note February 27, 2007 Introduction AN1385.0 The ISL21400 Programmable Output Temperature Sensor IC LDMOS transistors are used for RF Power Amplification in
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ISL21400
AN1385
ISL21400
200w power amplifier circuit diagram
LDMOS digital
MRF9080
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Untitled
Abstract: No abstract text available
Text: MSD42WT1, MSD42T1 Preferred Device NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface mount
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MSD42WT1,
MSD42T1
SC-70/SOT-323
SC-59
SC-70
OT-323)
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PHC2300
Abstract: FET pair n-channel p-channel
Text: PHC2300 Complementary TrenchMOS logic level FET Rev. 04 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is
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PHC2300
PHC2300
FET pair n-channel p-channel
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transistor smd code marking nc
Abstract: No abstract text available
Text: SO T4 57 PMN27UP 20 V, 5.7 A P-channel Trench MOSFET Rev. 1 — 13 July 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN27UP
OT457
SC-74)
transistor smd code marking nc
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PHC2300
Abstract: 6 PIN case mos fet p-channel nxp phc2300
Text: SO 8 PHC2300 Complementary enhancement mode MOS transistors Rev. 05 — 24 February 2011 Product data sheet 1. Product profile 1.1 General description One N-channel and one P-channel enhancement mode Field-Effect Transistor FET in a plastic package. This product is designed and qualified for use in computing,
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PHC2300
PHC2300
6 PIN case mos fet p-channel
nxp phc2300
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zy smd transistor
Abstract: transistor smd zy transistor SMD marking ZY NXP SMD mosfet MARKING CODE pmn34up TRANSISTOR SMD MARKING CODE zy SMD mosfet MARKING code T
Text: SO T4 57 PMN34UP 20 V, 5 A P-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN34UP
OT457
SC-74)
zy smd transistor
transistor smd zy
transistor SMD marking ZY
NXP SMD mosfet MARKING CODE
pmn34up
TRANSISTOR SMD MARKING CODE zy
SMD mosfet MARKING code T
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SOT457 N-Channel
Abstract: No abstract text available
Text: SO T4 57 PMN25EN 30 V, 6.2 A N-channel Trench MOSFET Rev. 1 — 29 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN25EN
OT457
SC-74)
SOT457 N-Channel
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d30n02
Abstract: No abstract text available
Text: S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m W ) Max ID R ugged and reliable. 20V
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DU/D30N02
O-252
O-251
O-252AA
Tube/TO-252
O-252
d30n02
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D 1414 transistor
Abstract: HCPL 454 optocoupler 630 HCNW4506 OPTOCOUPLER 6N137 hcpl 8200 optocoupler a 4504 A 7860 Optocoupler HSSR-8060 2601 optocoupler
Text: Single Channel 1 MBd Transistor Output Optocoupler 6N135/6 Type Part Number Package Prop VDE Insulation CTR CMR – V/µs (VCM) 300 400 Delay VIORM UL = 1 min. Page mil mil If tPHL tPLH Min. Max. 1000 10000 15000 DIP SO8 DIP mA µs (max.) % % (10 V) (1.5 kV) (1.5 kV) 630 Vp 1414 Vp 2500 V 5000 V No.
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6N135/6
6N135
HCPL-0500
HCNW135
6N136
HCPL-0501
HCNW136
HCPL-4502
HCPL-0452
HCNW4502
D 1414 transistor
HCPL 454
optocoupler 630
HCNW4506
OPTOCOUPLER 6N137
hcpl 8200
optocoupler a 4504
A 7860 Optocoupler
HSSR-8060
2601 optocoupler
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Untitled
Abstract: No abstract text available
Text: S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m W ) Max ID R ugged and reliable. 20V
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DU/D30N02
O-252
O-251
O-252AA
O-252
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Untitled
Abstract: No abstract text available
Text: DATASHEET EPC1011 EPC1011 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 25 mW ID , 12 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC1011
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Untitled
Abstract: No abstract text available
Text: DATASHEET EPC1015 EPC1015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC1015
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.
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BSD22
OT-143
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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delay line ms-19
Abstract: D 1414 transistor HCPL 8200 HSSR-8060 HCPL-0703 8060 transistor
Text: q i Single Channel 1 MBd Transistor Output Optocoupler 6N135/6 Type Part Number 300 mil DIP 6N135 HCPL-0500 HCNW135 / 6N136 HCPL-0501 HCNW136 / HCPL-4502I1] HCPL-0452M1 HCNW4502I1! / HCPL-4503H] HCPL-0453I1! HCNW450311! / HCPL-4504I1] HCPL-045411! HCNW450411!
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6N135/6
6N135
HCPL-0500
HCNW135
6N136
HCPL-0501
HCNW136
HCPL-4502I1]
HCPL-0452M1
HCNW4502I1!
delay line ms-19
D 1414 transistor
HCPL 8200
HSSR-8060
HCPL-0703
8060 transistor
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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IRFM9240
Abstract: 2N7237 23XT
Text: Data Sheet No. PD-9.497D INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED IRFM9S40 2N 7237 JANS2N7237 JANTX2N7237 JANTXV2N7237 HEXFET TRANSISTOR : P-CHANNEL REF: M IL -S -1 9 5 0 0 /5 9 5 ] -200 Volt, 0.51 Ohm HEXFET Product Summary
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IRFM9S40
JANS2N7237
JANTX2N7237
JANTXV2N7237
IRFM9240D
IRFM9240U
O-254
MIL-S-19500
I-388
IRFM9240
2N7237
23XT
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Untitled
Abstract: No abstract text available
Text: S IE M E N S PNP Silicon High-Voltage Transistor BFN 21 • Suitable for video output stages in T V sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F N 20 NPN
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Q62702-F1059
OT-89
35L05
fl235b05
0535bG5
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1316
OT-23
BFR183
900MHz
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