MRF660
Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040
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2N2876
2N3137
2N3375
2N3553
2N3632
2N3733
2N3924
2N3926
2N3927
2N3948
MRF660
MRF485
KTC1969
MRF150MP
MRF496
2SC2029B
MRF648
MRF646
MRF429MP
MRF648 Data Sheet
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB2226M80 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2226M80 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.25-2.55 GHz. While operating
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IB2226M80
IB2226M80
IB2226M80-REV-PR1-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: PD - 95782A IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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5782A
IRG4BC20W-SPbF
150kHz
EIA-418.
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TACAN transistor
Abstract: No abstract text available
Text: MS2209 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION Features • · · · · REFRACTORY/GOLD METALIZATION LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY EMITTER SITE BALLASTED DESCRIPTION: THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND,
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MS2209
MS2209
100ns
10msec,
TACAN transistor
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Untitled
Abstract: No abstract text available
Text: PD - 95782A IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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5782A
IRG4BC20W-SPbF
150kHz
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD - 95782 IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC20W-SPbF
150kHz
EIA-418.
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IRF530S
Abstract: No abstract text available
Text: PD - 95782 IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC20W-SPbF
150kHz
EIA-418.
IRF530S
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Untitled
Abstract: No abstract text available
Text: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20SPbF
O-220AB
O-220AB
O-220AB.
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Untitled
Abstract: No abstract text available
Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5639A
IRG4BC20SPbF
O-220AB
O-220AB
I4BC20SPbF
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Untitled
Abstract: No abstract text available
Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5639A
IRG4BC20SPbF
O-220AB
O-220AB
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IRF 042
Abstract: IRG4BC20UDPBF
Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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4909A
IRG4BC20UDPbF
O-220AB
IRF 042
IRG4BC20UDPBF
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555 triangular wave
Abstract: IRG4BC20U
Text: PD - 9.1448C IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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1448C
IRG4BC20U
O-220AB
O-220AB
555 triangular wave
IRG4BC20U
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Untitled
Abstract: No abstract text available
Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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4909A
IRG4BC20UDPbF
O-220AB
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7
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DG17S24
2SC1944
2SC1944
27MHz,
27MHz
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27mhz rf ic
Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,
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2SC1944
2SC1944
27MHz,
T0-220
27MHz
27mhz rf ic
T30 transistor
27mhz transistor
27mhz rf amplifier
T-30
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2SC3133
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3133 NPN EPITAXIAL PLANAR TYP E DISCRIPTION 2SC3133 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in HF band mobile radio applications. FEATURES • • • • • High power gain: Gpe > 1 4 d B
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2SC3133
2SC3133
27MHz,
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2SC3133
Abstract: 27mhz rf ic TRANSISTOR 1P 1P H transistor 27mhz transistor RF POWER TRANSISTOR NPN
Text: MITSUBISHI RF POWER TRANSISTOR 2SC 3133 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3133 is a silicon NPN ep itaxia l planar type transistor Dimensions i designed fo r RF pow er am plifiers in HF band m obile radio applications. 9.1 ± 0 . 7
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2SC3133
2SC3133
27mhz rf ic
TRANSISTOR 1P
1P H transistor
27mhz transistor
RF POWER TRANSISTOR NPN
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Untitled
Abstract: No abstract text available
Text: L BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor M arking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLIN E DETAILS A LL DIM ENSIONS IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 • COLLECTOR
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BCW66F,
BCW66G
BCW66H
180put
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2SC2783
Abstract: VC-80 Series uhf 13W amplifier
Text: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 UHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm 1R4±Q5 Output Power : Po = 40W Min. (f = 470MHz, V e e = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL
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2SC2783
470MHz,
2-13C1A
470MHz
961001EAA2'
2SC2783
VC-80 Series
uhf 13W amplifier
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2sc2783
Abstract: No abstract text available
Text: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. ia4±a5 Output Power : Po = 40W Min. (f=470MHz, V cc = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC2783
470MHz,
2-13C1A
961001EAA2'
2sc2783
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 3 UHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 40W Min. (f= 470MHz, VCC = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC
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2SC2783
470MHz,
2-13C1A
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