TRANSISTOR 1501 Search Results

TRANSISTOR 1501 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 1501 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
9434 Abstract: RF 1501 100 watt transistor Text: e PTB 20046 1 Watt, 1465–1513 MHz Cellular Radio RF Power Transistor Description The 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP	Original	PDF	1-877-GOLDMOS 1301-PTB 9434 RF 1501 100 watt transistor
MUN5331DW1T1 Abstract: LM3661TL-1.25 Text: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base	Original	PDF	MUN5311DW1T1 OT-363 MUN5331DW1T1 LM3661TL-1.25
MG1007-42 Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30 Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are	Original	PDF	MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	PDF	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: ERICSSON PTB 20074 14 Watts, 1477-1501 MHz Cellular Radio RF Power Transistor Key Features Description The 20074 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14771501 MHz frequency band. It is rated at 14 Watts minimum	OCR Scan	PDF	26Vdc,
26VDC Abstract: No abstract text available Text: ERICSSON ^ PTB 20046 1 Watts, 1477-1501 MHz Cellular Radio RF Power Transistor Description Key Features The 20046 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14771501 MHz frequency band. It is rated at 1 Watts minimum	OCR Scan	PDF	26Vdc, 26VDC
100 watt transistor Abstract: RF Transistor 1500 MHZ Text: ERICSSON ^ PTB 20046 1 Watt, 1477-1501 MHz Cellular Radio RF Power Transistor D escription The 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1477 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP	OCR Scan	PDF
trr 30-06xx2 Abstract: 30-06xx2 TRR25-10XX2 II10-04L5 Text: S E A BROüJ N/ ABB □ □40300 S. EMI C0h □□□□SOS 3 ' o I 1 J V - 5 is s a Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren m it 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes Transistor Type/Type Vcex	OCR Scan	PDF	25-10xx2 30-06xx2 50-06xx2 50-10xx2 50-12xx2 75-10xx2 100-10XX2 100-12xx2 150-10xx2 200-10xx2 trr 30-06xx2 30-06xx2 TRR25-10XX2 II10-04L5
TRR25-10XX2 Abstract: TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 50-10XX2 5012-X ISOLA DE 156 Text: A S E A B R Oü JN /AB B □□40300 S.ENICOÎ' □□□□SOS Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren mit 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes 1 J V - 5 3 ' o I Transistor Type/Type ATRR ATRR	OCR Scan	PDF	25-10xx2 30-06xx2 50-06XX2 50-10xx2 50-12XX2 75-10x 200-10XX2 300-10xx2 10-04L5 TRR25-10XX2 TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 5012-X ISOLA DE 156
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: KST10 NPN EPITAXIAL SILICON TRANSISTOR VHF/UHF TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t; C h a ra cte ristic Collector Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Dissipation Storage Temperature Thermal R esistance junction to Ambient	OCR Scan	PDF	KST10 OT-23 KSP1Q/11

2N2464 Abstract: TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor Text: SME D GENERAL TRANSISTOR CORP BTaöODl 00QG07M Q General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN General Purpose Typ» No, Plot (mW) VCEO	OCR Scan	PDF	3T5fl001 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N2464 TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor
2SK1501 Abstract: 2SK1501-Z MEI-1202 TEA-1035 2300C NC4016 Text: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTOR 2SK1501,1501 -Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1501 is N-channel M O S Field Effect Transistor in m illim eters designed fo r high voltage switching applications.	OCR Scan	PDF	2SK1501 1501-Z IEI-1209) 2SK1501-Z MEI-1202 TEA-1035 2300C NC4016
Untitled Abstract: No abstract text available Text: 7= 39- 3 / F6-8R10K EUPEC SEE Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values V ces •c D • 3M032T7 GDDDEb? 110 H U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p er module	OCR Scan	PDF	F6-8R10K 3M032T7
8 A 123 Abstract: DIODE BZ F6-8R10K Text: 7 = 3 9 -3 / F6-8R10K EUPEC SEE Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values V ces •c D • 3M032T7 GDDDEb? 110 H U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p er module	OCR Scan	PDF	F6-8R10K 00002b7 15Vits 8 A 123 DIODE BZ F6-8R10K
2SK784 Abstract: No abstract text available Text: 6427 52 5 N E C ELECTRON ICS INC 98D 18928 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Tfl • t427S2S 3 I _ _ _ 2SK784 DESCRIPTION The 2SK784 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters. FEA TU R ES	OCR Scan	PDF	t427sas 2SK784 2SK784
2N2464 Abstract: transistor 2n2270 2N6369 D 756 transistor Text: GENERAL TRANSISTOR CORP 2ME D • BTaflODl 00QD074 0 ■ General Transistor Corporation "T 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL S IG N A L TRANSISTORS NPN General Purpose Typ» No,	OCR Scan	PDF	00QD074 100TT T0-102 2N2464 transistor 2n2270 2N6369 D 756 transistor
KSP10 Abstract: kst10 silicon KST10 Text: NPN EPITAXIAL SILICON TRANSISTOR KST10 VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector D issipation Storage Tem perature Therm al Resistance junction to A m bient	OCR Scan	PDF	KST10 KSP10/11 OT-23 100nA, KSP10 kst10 silicon KST10
ic 20192 Abstract: 20192 RF Transistor 1500 MHZ Text: ERICSSON ^ PTB 20192 75 Watts, 1465 -1513 MHz Linear Power Transistor Preliminary Description Key Features The 20192 is a class AB, NPN, common emitter RF Power Transistor intended for26VDC operation across the 1465 -1513 MHz frequency band. It is rated at 75 Watts output power for	OCR Scan	PDF	for26VDC ic 20192 20192 RF Transistor 1500 MHZ
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF

TRANSISTOR 1501 Search Results

TRANSISTOR 1501 Result Highlights (5)

TRANSISTOR 1501 Datasheets Context Search

9434

MUN5331DW1T1

MG1007-42

la 4440 amplifier circuit diagram 300 watt

2sb504

Untitled

26VDC

100 watt transistor

trr 30-06xx2

TRR25-10XX2

2N2222A 338

y51 h 120c

sx3704

Untitled

2N2464

2SK1501

Untitled

8 A 123

2SK784

2N2464

KSP10

ic 20192

LG color tv Circuit Diagram schematics

IC HXJ 2038