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    TRANSISTOR 1507 Search Results

    TRANSISTOR 1507 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1507 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MCT2201

    Abstract: Opto-isolator
    Text: Issued November 1995 020-638 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is


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    MCT2201 MCT2201 1507C 10sec) 260mW 100x1 Opto-isolator PDF

    ir 035

    Abstract: MCT2201
    Text: Issued March 1997 232-5626 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is


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    MCT2201 MCT2201 1507C 10sec) 260mW 100x1 ir 035 PDF

    MUN5331DW1T1

    Abstract: LM3661TL-1.25
    Text: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    MUN5311DW1T1 OT-363 MUN5331DW1T1 LM3661TL-1.25 PDF

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    2SA2223A

    Abstract: A2223A 2SC6145A SANKEN AUDIO High power audio transistor equivalent table transistor 0882 SANKEN Sanken Transistor Mt 200 SANKEN POWER TRANSISTOR CF35
    Text: 2SA2223A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


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    2SA2223A 2SA2223A A2223A 2SC6145A SANKEN AUDIO High power audio transistor equivalent table transistor 0882 SANKEN Sanken Transistor Mt 200 SANKEN POWER TRANSISTOR CF35 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2151A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    2SA2151A PDF

    2SA2223

    Abstract: multi emitter transistor transistor 0882 2SA1668A SANKEN AUDIO transistor a2223 2SC6145 SANKEN transistor tip 35c sanken transistor
    Text: 2SA2223 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


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    2SA2223 2SA2223 multi emitter transistor transistor 0882 2SA1668A SANKEN AUDIO transistor a2223 2SC6145 SANKEN transistor tip 35c sanken transistor PDF

    C6145A

    Abstract: 2SC6145A 2SA2223A High power audio transistor equivalent table 2SC6145 sanken lapt sanken power transistor SANKEN AUDIO Sanken Transistor Mt 200 multi emitter transistor
    Text: 2SC6145A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These NPN power transistors achieve


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    2SC6145A C6145A 2SC6145A 2SA2223A High power audio transistor equivalent table 2SC6145 sanken lapt sanken power transistor SANKEN AUDIO Sanken Transistor Mt 200 multi emitter transistor PDF

    2SC6145

    Abstract: 2sc4382a SANKEN AUDIO Sanken Transistor Mt 200 SANKEN 2SA2223 SC102 corn cob collector Pan Overseas G746
    Text: 2SC6145 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These NPN power transistors achieve


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    2SC6145 2SC6145 2sc4382a SANKEN AUDIO Sanken Transistor Mt 200 SANKEN 2SA2223 SC102 corn cob collector Pan Overseas G746 PDF

    PHD78NQ

    Abstract: PHB78NQ03LT PHD78NQ03LT PHD78NQ03L
    Text: PHB78NQ03LT N-channel TrenchMOS logic level FET Rev. 05 — 13 June 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features


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    PHB78NQ03LT mbb076 OT404 PHD78NQ PHB78NQ03LT PHD78NQ03LT PHD78NQ03L PDF

    4pin opto isolator 610-2

    Abstract: 307-064 4pin opto isolator 308-613 4-pin optoisolator 307064 SFH610-2 BZX61 ISO74 dual channel opto triac
    Text: Issued November 1994 F18512 Transistor/Darlington opto-isolators A comprehensive range of 'general purpose' opto-isolators which consist of a light emitting diode coupled to a silicon phototransistor. The range comprises the following, and offers variations on Isolation Voltage, Current transfer ratio,


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    F18512 SFH610-2 CNY17-1 CNY17-3 H11A1 MCT2201 20kHz. IN4004 240Vac 4pin opto isolator 610-2 307-064 4pin opto isolator 308-613 4-pin optoisolator 307064 BZX61 ISO74 dual channel opto triac PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a piastic full-pack envelope intended for use in horizontal deflection circuits of colour television


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    BU1507DX 1507DX 100Po/PD25c PDF

    BU1507AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.


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    BU1507AX 1507AX 100Pc/rD2S BU1507AX PDF

    ic 20192

    Abstract: 20192 RF Transistor 1500 MHZ
    Text: ERICSSON ^ PTB 20192 75 Watts, 1465 -1513 MHz Linear Power Transistor Preliminary Description Key Features The 20192 is a class AB, NPN, common emitter RF Power Transistor intended for26VDC operation across the 1465 -1513 MHz frequency band. It is rated at 75 Watts output power for


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    for26VDC ic 20192 20192 RF Transistor 1500 MHZ PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3N74

    Abstract: TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N127 3N76 3N75 JAN 3K76
    Text: MIL-S-19500/390 USAF 22 January 1968 WTT TTA D V CDIfrTt'Tf'iTTnW SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N7A, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127 1. SCOPE •*-•1 Scope. This specification covers the detail requirements for a doubleemitter, NPNj silicon tetrode transistor designed primarily for low-power chopper


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    MIL-S-19500/390 TX3N75, TX3N76, 3N127, TX3N127 3N74-76 3N127 3N127 3N74 TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N76 3N75 JAN 3K76 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    K 2645 transistor

    Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
    Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W


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    0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645 PDF