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    TRANSISTOR 1546 Search Results

    TRANSISTOR 1546 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1546 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7746-1

    Abstract: 7746-1 transistor NSF2250WT1
    Text: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner designs.


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    PDF NSF2250WT1 7746-1 7746-1 transistor

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN1546B NPN Triple Diffused Planar Silicon Transistor 2SC3448 500V/4A Switching Regulator Applications Applications Package Dimensions • Switching regulator. unit:mm 2022A Features [2SC3448] · High breakdown voltage and high reliability.


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    PDF ENN1546B 2SC3448 00V/4A 2SC3448]

    2SC3448

    Abstract: No abstract text available
    Text: Ordering number:EN1546B NPN Triple Diffused Planar Silicon Transistor 2SC3448 500V/4A Switching Regulator Applications Applications Package Dimensions • Switching regulator. unit:mm 2022A Features [2SC3448] · High breakdown voltage and high reliability.


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    PDF EN1546B 2SC3448 00V/4A 2SC3448] 2SC3448

    transistor k 2761

    Abstract: C1225
    Text: ISO 9001 Registered Process C1225 1.2µm BiCMOS Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage


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    PDF C1225 65x65 C1225-4-98 transistor k 2761 C1225

    C1225

    Abstract: c122-5
    Text: ISO 9001 Registered Process C1225 1.2µm BiCMOS Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage


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    PDF C1225 65x65 C1225 c122-5

    C1206

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage


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    PDF C1206 C1206 C1206-4-98

    C1206

    Abstract: C1221 100x100um
    Text: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


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    PDF C1221 C1221 C1221-4-98 C1206 100x100um

    C1206

    Abstract: C1221
    Text: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


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    PDF C1221 C1221 C1206

    transistor k 2761

    Abstract: C1206 TRANSISTOR C1206
    Text: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage


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    PDF C1206 C1206 C1206-4-98 transistor k 2761 TRANSISTOR C1206

    transistor k 2761

    Abstract: k 2761 transistor poly silicon resistor C1230 hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um
    Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


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    PDF C1230 C1230 transistor k 2761 k 2761 transistor poly silicon resistor hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um

    transistor k 2761

    Abstract: C1230 C1206
    Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


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    PDF C1230 C1230 C1230-4-98 transistor k 2761 C1206

    C1230

    Abstract: transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206
    Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


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    PDF C1230 C1230 transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206

    6030v4

    Abstract: Y190
    Text: HD66330T TFT Driver 64-Level Gray Scale Driver for TFT Liquid Crystal Display Description Features The HD66330T, a signal driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The LSI receives 6-bit digital display data per dot and


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    PDF HD66330T 64-Level HD66330T, HD66330T 6030v4 Y190

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    2SC3448

    Abstract: No abstract text available
    Text: Ordering num ber:EN 1546B I _ No.1546B 2SC3448 NPN Triple Diffused Planar Silicon Transistor Fo r Sw i t c h i n g Re g u l a t o r s Use . Switching regulator . Features • • • • High breakdown voltage and high reliability Fast switching speed


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    PDF 1546B 1546b 2SC3448 300ps,

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2SC4001

    Abstract: 2SA1546
    Text: NEC PNP SILICON POWER TRANSISTOR 2SA1546 D E S C R IP T IO N The 2S A 1546 is designed for uses o f high-resolution monitor PAC KAG E D IM E N S IO N S T V applications. This makes it possible to raise the video band in m illim e te rs inches of high-resolution m onitor TVs to 50 MHz.


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    PDF 2SA1546 2SA1546 2SC4001

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    germanium

    Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
    Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014


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    PDF I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz F= 1.5 dB at 900MHz


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    PDF BFP196W 900MHz Q62702-F1576 OT-343 fl23S 53SLDS G151T7D

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346