Untitled
Abstract: No abstract text available
Text: NXP 1.4 to 1.7 GHz RF power transistor BLF7G15LS-200 RF power transistor for leading performance in 1.5 GHz LTE basestations Optimized for 1.5 GHz LTE/W-CDMA applications and built in rugged Gen7 LDMOS, this 28 V ceramic transistor delivers best-in-class efficiency in a symmetrical Doherty configuration.
|
Original
|
BLF7G15LS-200
BLF7G15LS
|
PDF
|
STAP85035
Abstract: No abstract text available
Text: STAP85035 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection
|
Original
|
STAP85035
2002/95/EC
STAP85035
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
|
Original
|
320ps
SY10EP51V
SY10EP51V
EP51V
HEP51V
HEP51V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: G1555 Global Mixed-mode Technology Inc. 14+1 Channel Voltage Buffers for TFT LCD Features General Description Supply Operation Range : 6.5V to 16.5V The G1555 consists of 14+1 channel buffers target toward the needs of thin film transistor liquid crystal
|
Original
|
G1555
100mA
120mA
300mA
TQFP7X7-48
G1555
|
PDF
|
uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
|
Original
|
PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
|
Original
|
320ps
SY10EP51V
EP51V
HEP51V
HEP51V
SY10EP51V
|
PDF
|
sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
|
Original
|
Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
|
PDF
|
SY10EP51V
Abstract: SY10EP51VKI SY10EP51VKITR SY10EP51VZI SY10EP51VZITR
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V FINAL DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
|
Original
|
SY10EP51V
320ps
SY10EP51V
EP51V
HEP51V
SY10EP51VKI
SY10EP51VKITR
SY10EP51VZI
SY10EP51VZITR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK ECL Pro SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
|
Original
|
320ps
SY10EP51V
EP51V
HEP51V
HEP51V
SY10EP51V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size
|
Original
|
NSL12AW
NSL12AW
|
PDF
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
|
PDF
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
PDF
|
transistor D 1557
Abstract: d 1556 transistor transistor d 1556 1557 b transistor transistor 1555
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC
|
OCR Scan
|
PHP12N10E
T0220AB
transistor D 1557
d 1556 transistor
transistor d 1556
1557 b transistor
transistor 1555
|
PDF
|
LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
|
PDF
|
|
1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
|
PDF
|
d 1556 transistor
Abstract: No abstract text available
Text: • bbS3T31 0025fc.Qfl ISM « A P X N AMER PHILIPS/DISCRETE BSS64 b?E 3> HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended fo r high-voltage general purpose and switching
|
OCR Scan
|
bbS3T31
0025fc
BSS64
002Sbll
d 1556 transistor
|
PDF
|
transistor d 1556
Abstract: d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor flE35b05 AF 279
Text: ESC D • flE35bG5 OODMO?^ 7 m S I Z G ' PNP Germanium UHF Transistor A F 279 S SIEMENS A K T I E N G E S E L L S C H A F 25C 04079 D - — fo r in p u t stages up to 9 0 0 M H z fly ' A n ' AF 279 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly
|
OCR Scan
|
flE35b05
T0119.
q62701-f87
y12bl
transistor d 1556
d 1556 transistor
transistor af 126
AF279S
transistor 1555
UHF pnp transistor
AF279
PNP UHF transistor
AF 279
|
PDF
|
transistor d 1556
Abstract: d 1556 transistor BSS64
Text: • bbS3T31 D025fci0ô ISM BIAPX N AUER PHILIPS/DISCRETE BSS64 b?E D HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a m icrom iniature plastic envelope intended fo r application in thick and th in -film circuits. This transistor is intended fo r high-voltage general purpose and switching
|
OCR Scan
|
D025fci0Ã
BSS64
7Z77661
transistor d 1556
d 1556 transistor
BSS64
|
PDF
|
pm4020
Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
|
OCR Scan
|
23SbOS
AF240
Q60106-X240
-13J5Ã
TambS45Â
-CC80
y12bl
pm4020
AF279
p21b
AF279S
900 mhz germanium diode
Germanium
Q60106-X240
S400
d 1556 transistor
|
PDF
|
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
|
OCR Scan
|
|
PDF
|
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
|
OCR Scan
|
CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
|
PDF
|
transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
|
OCR Scan
|
|
PDF
|
RCA-2N5179
Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
Text: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as
|
OCR Scan
|
2N5179
RCA-2N5179*
2N5179
TA7319.
482mm)
RCA-2N5179
2n5179 equivalent
TA7319
solid state 2n5179
2n5179 rca
npn UHF transistor 2N5179
2N517
TIC 2460
rca transistor
|
PDF
|
germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
|
OCR Scan
|
I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
|
PDF
|