10160-001
Abstract: std motor G3202 00002EE0 g3425
Text: HIGH PERFORMANCE TRANSISTOR INVERTER TRUE TORQUE CONTROL DRIVE SERIES PROFIBUS-DP COMMUNICATIONS INTERFACE December, 1998 ICC #10160-001 Introduction Thank you for purchasing the “Profibus-DP Communications Interface” for the Toshiba TOSVERT-130 G3 High-Performance Transistor Inverter. Before using the
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OSVERT-130
10160-001
std motor
G3202
00002EE0
g3425
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transistor EN 13003 A
Abstract: No abstract text available
Text: 15C02MH Ordering number : EN7354B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15C02MH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency amplifer, high-speed switching, small motor drive Features
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15C02MH
EN7354B
transistor EN 13003 A
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transistor EN 13003 A
Abstract: transistor EN 13003 transistor EN 13003 C IT05047 7353-1 transistor PC 13003 TRANSISTOR application
Text: 15C02CH Ordering number : EN7353B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15C02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency amplifer, high-speed switching, small motor drive Features
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EN7353B
15C02CH
transistor EN 13003 A
transistor EN 13003
transistor EN 13003 C
IT05047
7353-1 transistor
PC 13003 TRANSISTOR application
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transistor EN 13003 A
Abstract: No abstract text available
Text: 15C02CH Ordering number : EN7353B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15C02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency amplifer, high-speed switching, small motor drive Features
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15C02CH
EN7353B
transistor EN 13003 A
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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FET TH 469
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK545-200A/B
BUK545
-200A
-200B
FET TH 469
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effeet power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK9624-55
OT404
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mb060
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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BUK482-100A
OT223
mb060
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench' technology. The device features very low on-state resistance
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BUK7518-30
T0220AB
-ID/100
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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12w 5d
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES
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2SC3629
2SC3629
520MHz,
12w 5d
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k 246 transistor fet
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench' technology. The device features very low on-state resistance and has
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BUK9575-55
T0220AB
DE-55
k 246 transistor fet
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Helipot
Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Text: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used
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MIL-S-19500/425
JAN2N5431,
JANTX2N5431
pulse-repe0/425
MIL-S-19500,
MIL-S-19500
Helipot
JAN2N5431
MIL-STD-750-Test
capacitor ttc 342
J3 DIODE ST
JANTX2N5431
20.000H
unijunction application note
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Untitled
Abstract: No abstract text available
Text: FZ 800 R 16 KF 1 Transistor Transistor Thermische Eigenschaften Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1600 V 800 A lc Thermal properties R th JC DC, pro Baustein / per module 0,020 °C/W R th C K pro Baustein / per module
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15CPC,
DDD2021
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2SK784
Abstract: No abstract text available
Text: 6427 52 5 N E C ELECTRON ICS INC 98D 18928 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Tfl • t427S2S 3 I _ _ _ 2SK784 DESCRIPTION The 2SK784 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters. FEA TU R ES
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t427sas
2SK784
2SK784
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Untitled
Abstract: No abstract text available
Text: FZ 800 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,020 °C/W R th J C Elektrische Eigenschaften Electrical properties V ces Maximum rated values 1600 V 800 A R th C K 150 °C - 40 / + 150 °C
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DQD2021
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2SC741
Abstract: transistor 1p 1p TRANSISTOR ZM50 TG-25 1P H transistor
Text: MITSUBISHI RF POWER TRANSISTOR 2SC741 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION O UTLINE DRAWING 2SC741 is a silicon NPN epitaxial planar type transistor designed fo r industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm
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2SC741
Gpeii13dB
150MHz
2SC741
transistor 1p
1p TRANSISTOR
ZM50
TG-25
1P H transistor
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TL 650 ht
Abstract: BUK793-60A d0ss BUK7y3-60A buk793 vmk 5 pin
Text: Philips Com ponents Data sheet status P re lim in a ry s p e c ific a tio n March 1991 date of issue BUK793-60A PowerMOS transistor SensorFET PHILIPS INTERNATIONAL fa , SbE J> m — GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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OT263
BUK793-60A
7110flSb
BUK793-60A
TL 650 ht
d0ss
BUK7y3-60A
buk793
vmk 5 pin
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PDF
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2SC3001
Abstract: mitsubishi vcb
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3001 NPN EPITAXIAL PL AN AR T Y P E DESCRIPTION OUTLINE DRAWING Dimensions in mm 2 S C 3 0 0 1 is a silicon NPN epitaxial planar typ e transistor specifi cally designed for V H F pow er amplifier applications. FEATURES •
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2SC3001
2SC3001
mitsubishi vcb
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