sot363 1ft
Abstract: 1Ft SOT363 1Ft TRANSISTOR SOT363 6 BC847BS BC847BS BC857BS BP317 MARKING CODE 1Ft sot363 bc847bs mcc
Text: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BC847BS NPN general purpose double transistor Product specification File under Discrete Semiconductors, SC04 1997 Jul 14 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BC847BS
|
Original
|
MBD128
BC847BS
SCA55
117047/00/01/pp8
sot363 1ft
1Ft SOT363
1Ft TRANSISTOR
SOT363 6 BC847BS
BC847BS
BC857BS
BP317
MARKING CODE 1Ft sot363
bc847bs mcc
|
PDF
|
1Ft SOT363
Abstract: sot363 1ft 1Ft TRANSISTOR BC847BS Philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC847BS NPN general purpose double transistor Product specification Supersedes the data of 1997 Jul 14 1999 Apr 28 Philips Semiconductors Product specification NPN general purpose double transistor
|
Original
|
MBD128
BC847BS
SCA63
115002/00/02/pp8
1Ft SOT363
sot363 1ft
1Ft TRANSISTOR
BC847BS Philips
|
PDF
|
HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
|
Original
|
|
PDF
|
transistor 1BT
Abstract: 1Gt transistor 1bt npn 1Ft SOT323 npn 1bt 1bt transistor marking code 1gt 1Ft TRANSISTOR 1gt MARKING TRANSISTOR 1gt
Text: Central BC846W SERIES BC847W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface
|
Original
|
BC846W
BC847W
OT-323
100MHz
200Hz
BC846AW
BC847AW
transistor 1BT
1Gt transistor
1bt npn
1Ft SOT323
npn 1bt
1bt transistor
marking code 1gt
1Ft TRANSISTOR
1gt MARKING
TRANSISTOR 1gt
|
PDF
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
PDF
|
1518 B TRANSISTOR
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
|
OCR Scan
|
PHP8N20E
T0220AB
1518 B TRANSISTOR
|
PDF
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
PDF
|
8B123
Abstract: 2SB1232 2SD1842 1SB12
Text: |~Ordering number: EN 3261A 2SB1232/2SD1842 2SB1232 : P N P Epitaxial Planar Silicon Transistor 2SD1842 : N P N Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications Featu res •Large current capacity and wide ASO. •Low saturation voltage.
|
OCR Scan
|
2SB1232/2SD1842
2SB1232
2SD1842
00V/40A
8B123
2SB1232
2SD1842
1SB12
|
PDF
|
Helipot
Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Text: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used
|
OCR Scan
|
MIL-S-19500/425
JAN2N5431,
JANTX2N5431
pulse-repe0/425
MIL-S-19500,
MIL-S-19500
Helipot
JAN2N5431
MIL-STD-750-Test
capacitor ttc 342
J3 DIODE ST
JANTX2N5431
20.000H
unijunction application note
|
PDF
|
bu2508df
Abstract: BU250BDF 2T3 transistor sot199
Text: N AUER PHI LIP S/DISCRETE bTE D • 1^53^31 D02Ö3S7 672 * A P X Product Specification Philips Semiconductors_ Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
|
OCR Scan
|
BU2508DF
OT199;
bu2508df
BU250BDF
2T3 transistor
sot199
|
PDF
|
LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
|
PDF
|
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
|
PDF
|
1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
|
PDF
|
et1600
Abstract: Japanese Transistor TRANSISTOR P 3 80ng transistor N J
Text: VISHAY Vishay Telefunken T Classification Chart for Opto Couplers G e n e ra l p u rp o s e CTR>I0% Standard 4N25/2<> a Transistor output -, * - 4 N 3 Ï-3 7 !. TRMÔWE. I B ase n.c. |- Transistor output H igh CTR Darlington output American pin connection
|
OCR Scan
|
4N25/2<
V1CT6H/62
KK27PH
KK24P
3010PiG
3020P
ET1600
Japanese Transistor
TRANSISTOR P 3
80ng
transistor N J
|
PDF
|
|
|
2N3904
Abstract: 2N39D4 2N3304 pc 525 2N39Q4 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3
Text: 2N3904 S/S TR r-r. ELECTRONICS GENERAL PURPOSE TRANSISTOR Colledor-Emitter Voltage: VCEOm40V Collector Dissipation: ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
|
OCR Scan
|
2N39Q4
VCEOm40V
2N3904
2N3904
2N3904)
2N39D4
2N3304
pc 525
2n3904 225
h 2n3904
2N3904S
2N3903
2N39Q3
|
PDF
|
BUK457-600B
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transìstor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
BUK457-600B
T0220AB
BUK457-600B
|
PDF
|
1Ft TRANSISTOR
Abstract: marking code 1ft Bc857bs
Text: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BC847BS PINNING • Low collector capacitance PIN DESCRIPTION • Low collector-emitter saturation voltage 1 ,4 emitter TR1; TR2 • Closely matched current gain 2, 5
|
OCR Scan
|
BC847BS
SC-88
BC857BS.
SC-88)
1Ft TRANSISTOR
marking code 1ft
Bc857bs
|
PDF
|
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
|
OCR Scan
|
|
PDF
|
2SD2318F5
Abstract: No abstract text available
Text: v7> £ /Transistors 2SD2318F5 E M 2 S D 2 3 1 8 • W F S r W & ifc y u - l - m N P N ' > V z i > Trjp|e Transistor Triple Diffused Planar NPN Silicon Transi; «HE/Low Freq. Power Amp. 1ftff^&ES/'Dim ensions U nit: mm h FE = 1000 (Typ.) 2) V c e (sat) VCE (sat)=0.5V(Typ.)
|
OCR Scan
|
2SD2318F5
Pw--100ms
|
PDF
|
2SC4458
Abstract: No abstract text available
Text: Ordering num ber: EN 3329 I SA ft/O i _ No.3329 2SC4458 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F eatu re s • High breakdown voltage, high reliability •Fast switching speed • Wide ASO • Adoption of MBIT process
|
OCR Scan
|
2SC4458
300//s
2SC4458
|
PDF
|
transistor 21Y
Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
Text: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements
|
OCR Scan
|
/331A
MIL-S-19500/
2N1553A
2N1556A
2N1554A
2N1555A
2N1556A
transistor 21Y
2N1556
TRANSISTOR 3052
2N1555
J717
2N1553
|
PDF
|
transistor smd 1FT
Abstract: AT12L
Text: W h a lH E W L E T T $ mLKM PACKARD Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X ‘ See matrix for available extensions. Features
|
OCR Scan
|
HCPL-553X
HCPL-653X
HCPL-655X
HCPL-550X
MIL-PRF-38534
QML-38534,
6N135D
MIL-PRF-38534.
5964-3910E
transistor smd 1FT
AT12L
|
PDF
|
2SC1424
Abstract: 2SC4090 017 545 71 32 02 2SC2026
Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 I • SMALL COLLECTOR CAPACITANCE: 1 pF
|
OCR Scan
|
NE73435)
NE734
NE73400)
S12S21|
2SC1424
2SC4090
017 545 71 32 02
2SC2026
|
PDF
|
transistor marking 75s
Abstract: No abstract text available
Text: 2SK2417 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR i SILICON N CHANNEL MOS TYPE tt-M OSV <; k i 17 û HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •
|
OCR Scan
|
2SK2417
SC-67
2-10R1B
transistor marking 75s
|
PDF
|
