b1009 transistor
Abstract: B1009 ba656 ba9700-series BA6566
Text: Regulator ICs Switching regulator for DC-DC converters BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF and BA9700AFV are switching regulators that use a pulse width modulation PWM system. They use a transistor switch to stabilize the output voltage. By the use of the transistor, power loss is decreased, fluctnation efficiency is improved, and the circuit is made more
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BA9700A/BA9700AF/BA97OOAFV
BA9700A,
BA9700AF
BA9700AFV
470kHz)
BU8874lBU8874F
BU8874
BU8874F
03iOl
b1009 transistor
B1009
ba656
ba9700-series
BA6566
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SOA06
Abstract: SOA56 transistors marking HJ hj sot-23 1Gt transistor TRANSISTOR 1gt
Text: SOA06 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SOA06 1GT SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION PNP COMPLEMENTS IS SOA56 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM
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SOA06
SOA56
OT-23
SOA06
SOA56
transistors marking HJ
hj sot-23
1Gt transistor
TRANSISTOR 1gt
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n06hd
Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
Text: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and
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TND310
TND310/D
n06hd
N Channel MOS FET 3 ghz
International rectifier thyristor manual
SOT953
Thyristor to220
N Channel MOS FET up to 5 ghz
MOS FET SOT-223 ON
st naming
DC variable power center tap
MOTOROLA TRANSISTOR TO-220
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transistor 1BT
Abstract: 1Gt transistor 1bt npn 1Ft SOT323 npn 1bt 1bt transistor marking code 1gt 1Ft TRANSISTOR 1gt MARKING TRANSISTOR 1gt
Text: Central BC846W SERIES BC847W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface
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BC846W
BC847W
OT-323
100MHz
200Hz
BC846AW
BC847AW
transistor 1BT
1Gt transistor
1bt npn
1Ft SOT323
npn 1bt
1bt transistor
marking code 1gt
1Ft TRANSISTOR
1gt MARKING
TRANSISTOR 1gt
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Untitled
Abstract: No abstract text available
Text: CS52510−1 10 A LDO 5−Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessor. To achieve very low dropout, the internal pass transistor is powered separately from the control
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CS52510â
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CS5258
Abstract: No abstract text available
Text: Back CS5258-1 8.0 A LDO 5-Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessors. To achieve very low dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with the control and power inputs tied
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CS5258-1
r14525
CS5258
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Untitled
Abstract: No abstract text available
Text: Back CS5257A-1 7.0 A LDO 5-Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessors. To achieve very low dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with the control and power inputs tied
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CS5257A-1
r14525
CS5257A
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CS52510-1
Abstract: No abstract text available
Text: CS52510-1 10 A LDO 5-Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessor. To achieve very low dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with the control and power inputs tied together,
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CS52510-1
r14525
CS52510
CS52510-1
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CS5257A-1
Abstract: LT1580 EA 5pin transistor 5257A
Text: CS5257A-1 7.0 A LDO 5-Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessors. To achieve very low dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with the control and power inputs tied
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CS5257A-1
r14525
CS5257A
CS5257A-1
LT1580
EA 5pin transistor
5257A
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amplifier 5.1 surrounding system circuit diagram
Abstract: data sheet 702 TRANSISTOR npn CS5258 circuit diagram of 1000 watt electronic regulator
Text: CS5258−1 8.0 A LDO 5−Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessors. To achieve very low dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with the control and power inputs tied
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CS5258-1
O-220
CS5258-1/D
amplifier 5.1 surrounding system circuit diagram
data sheet 702 TRANSISTOR npn
CS5258
circuit diagram of 1000 watt electronic regulator
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702 H transistor smd
Abstract: free circuit diagram of motherboard rca 381 transistor 702 TRANSISTOR 702 TRANSISTOR smd Low Dropout Positive regulator 12 v 2 amperes SMD electrolytic capacitor to-220-5 LT1580
Text: CS5257A−1 7.0 A LDO 5−Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessors. To achieve very low dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with the control and power inputs tied
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CS5257A-1
O-220-5
CS5257A-1/D
702 H transistor smd
free circuit diagram of motherboard
rca 381 transistor
702 TRANSISTOR
702 TRANSISTOR smd
Low Dropout Positive
regulator 12 v 2 amperes
SMD electrolytic capacitor
to-220-5
LT1580
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Untitled
Abstract: No abstract text available
Text: CS5257A−1 7.0 A LDO 5−Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessors. To achieve very low dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with the control and power inputs tied
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CS5257Aâ
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CS52510-1
Abstract: No abstract text available
Text: CS52510-1 10 A LDO 5-Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessor. To achieve very low dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with the control and power inputs tied together,
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CS52510-1
r14525
CS52510
CS52510-1
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CS5258
Abstract: CS5258-1
Text: CS5258-1 8.0 A LDO 5-Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessors. To achieve very low dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with the control and power inputs tied
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CS5258-1
r14525
CS5258
CS5258-1
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CS5257A-1
Abstract: LT1580
Text: CS5257A-1 7.0 A LDO 5-Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessors. To achieve very low dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with the control and power inputs tied
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CS5257A-1
r14525
CS5257A
CS5257A-1
LT1580
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CS5258
Abstract: CS5258-1
Text: CS5258-1 8.0 A LDO 5-Pin Adjustable Linear Regulator This new very low dropout regulator is designed to power the next generation of advanced microprocessors. To achieve very low dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with the control and power inputs tied
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CS5258-1
r14525
CS5258
CS5258-1
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transistor 1bt
Abstract: 1Ft SOT323 npn 1bt 1Ft TRANSISTOR marking code 1gt 1bt npn 1Bt 65 1Gt transistor marking code 1ft 1GT MARKING
Text: BC846W SERIES BC847W SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,
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BC846W
BC847W
OT-323
200Hz
BC846BW
BC847BW
BC846AW
BC847AW
transistor 1bt
1Ft SOT323
npn 1bt
1Ft TRANSISTOR
marking code 1gt
1bt npn
1Bt 65
1Gt transistor
marking code 1ft
1GT MARKING
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CS5208
Abstract: why are electrolytic capacitors good than ceramic
Text: CS5208−1 8.0 A LDO 3−Pin Adjustable Linear Regulator The CS5208−1 linear regulator provides 8.0 A at adjustable voltages from 1.25 V to 4.5 V. This adjustable device requires two external resistors to set the output voltage and provide the minimum load current for proper regulation.
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CS5208-1
CS5208-1
CS5208-1/D
CS5208
why are electrolytic capacitors good than ceramic
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Untitled
Abstract: No abstract text available
Text: Back CS5207A-1 7.0 A LDO 3-Pin Adjustable Linear Regulator The CS5207A–1 linear regulator provides 7.0 A at adjustable voltages from 1.25 V to 5.0 V. This adjustable device requires two external resistors to set the output voltage and provide the minimum
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CS5207A-1
CS5207A
r14525
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CS5208
Abstract: No abstract text available
Text: CS5208-1 8.0 A LDO 3-Pin Adjustable Linear Regulator The CS5208–1 linear regulator provides 8.0 A at adjustable voltages from 1.25 V to 4.5 V. This adjustable device requires two external resistors to set the output voltage and provide the minimum load current for proper regulation.
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CS5208-1
CS5208
r14525
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CS5210-1
Abstract: CS5210R CS52-10A
Text: CS5210-1 10 A LDO 3-Pin Adjustable Linear Regulator The CS5210–1 linear regulator provides 10 A at adjustable voltages from 1.25 V to 4.5 V. This adjustable device requires two external resistors to set the output voltage and provide the minimum load current for proper regulation.
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CS5210-1
CS5210
r14525
CS5210-1
CS5210R
CS52-10A
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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SC06960
Abstract: 1Gt transistor SOA06 SOA56 748 transistor on marking RZ7 SOT23
Text: r Z 7 SG S-TH O M SO N ^ 7 # is LIOTIMMlig! SOAO6 SMALL SIGNAL NPN TRANSISTOR Type Marking SOAO6 1GT . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION . PNP COMPLEMENTS IS SOA56
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SOA56
OT-23
sc06960
007TblS
SOA06
OT-23
SC06960
1Gt transistor
SOA06
SOA56
748 transistor on
marking RZ7 SOT23
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PO32
Abstract: 33J6 PH1600
Text: n/A-con p 2S E o h D • 5^42205 n D G Q S 7b 273 ■ HAP - T-3 3 -H M /A-COM PHI, IN C. 1742 CRENSHAW BLVD, TORRANCE, CALIFORNIA 9 0 5 0 1 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 A # A > M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR
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PH1600-32
F--06
PH1600-32
1600MHZ
470pF
015uF
F--07
PO32
33J6
PH1600
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