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    TRANSISTOR 1J Search Results

    TRANSISTOR 1J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT2369

    Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
    Text: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol


    Original     		PDF MMBT2369 MMBT2369 100mA. OT-23 MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23

    transistor smd 1E

    Abstract: SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a
    Text: SMD General Purpose Transistor NPN BC846/BC847/BC848 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208


    Original     		PDF BC846/BC847/BC848 OT-23 OT-23, MIL-STD-202G, BC846A BC847A BC847B BC847C BC848A BC848B transistor smd 1E SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a

    BCV61

    Abstract: BCV61A BCV61B BCV61C BCV62
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV61 NPN general purpose double transistor Product specification Supersedes data of 1997 Jun 16 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING


    Original     		PDF M3D071 BCV61 OT143B BCV62. SCA63 115002/00/03/pp8 BCV61 BCV61A BCV61B BCV61C BCV62

    PMBT2369

    Abstract: "npn switching transistor" 65 marking sot23 Marking 02 SOT23 marking A1 TRANSISTOR marking code 10 sot23 TR PMBT2369
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBT2369 NPN switching transistor Product specification Supersedes data of 1999 Apr 27 2004 Jan 22 Philips Semiconductors Product specification NPN switching transistor PMBT2369 FEATURES PINNING • Low current max. 200 mA


    Original     		PDF PMBT2369 SCA76 R75/04/pp7 PMBT2369 "npn switching transistor" 65 marking sot23 Marking 02 SOT23 marking A1 TRANSISTOR marking code 10 sot23 TR PMBT2369

    BUX20

    Abstract: bux 716 transistor BUX
    Text: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection


    OCR Scan     		PDF BUX20 CB-159 BUX20 bux 716 transistor BUX

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    PH3134-75S

    Abstract: No abstract text available
    Text: an AM P company Radar Pulsed Power Transistor, 75W, 1jxs Pulse, 10% Duty 3.1 • 3.4 GHz PH3134-75S Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    OCR Scan     		PDF PH3134-75S 2-j11 PH3134-75S

    Untitled

    Abstract: No abstract text available
    Text: I CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.89* 2.00 0.60 0.40 0.90


    OCR Scan     		PDF CMBT2369 100MHz;

    1B marking transistor

    Abstract: 33T4 CMBT2369
    Text: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 0.14 opérés 3 Pin configuration 2.6 t = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 .0 2 _ 0.89 0.60


    OCR Scan     		PDF CMBT2369 100MHz; 1B marking transistor 33T4 CMBT2369

    transistor j117

    Abstract: j76 transistor CC-36 J1171 J117
    Text: AfaCCM W an A M P company Radar Pulsed Power Transistor, 75W, 1jis Pulse, 10% Duty 3.1-3.4 GHz PH3134-75S Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geom etry


    OCR Scan     		PDF PH3134-75S transistor j117 j76 transistor CC-36 J1171 J117

    Untitled

    Abstract: No abstract text available
    Text: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor M arking CMBT2369 = 1J PACKAGE OU TLINE DETAILS A LL DIM ENSIONS IN m m _3.0_ 2.8 0.14 0.48 038 0.70 0.50 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 2.6 1.4 1.2 2.4 R0.1 CÔÔ4T


    OCR Scan     		PDF CMBT2369 100MHz;

    100C

    Abstract: BUK564-200A
    Text: Product specification Philips Semiconductors PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a


    OCR Scan     		PDF BUK564-200A OT404 BUK564-200A 100C

    BUK541

    Abstract: BUK541-100A BUK541-100B
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK541-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		PDF BUK541-100A/B BUK541 -100B -SOT186 OT186; BUK541-100A BUK541-100B

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK655-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		PDF BUK655-500B T0220AB BUK655-500B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF Lb53T31 0Dm03L. BLX91A D01404S 7Z68928

    transistor BUX

    Abstract: BUX10 bux THOMSON 4682 bux 10
    Text: *BUX10 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR A N S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E % Preferred device D isp o sitif recommandé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant 125 V 25 A


    OCR Scan     		PDF CB-19 transistor BUX BUX10 bux THOMSON 4682 bux 10

    BLX93A

    Abstract: No abstract text available
    Text: PHILIR-S INTERNATIONAL MIE D 7110flEb GGSTÖM? 3 BIPHIN BLX93A MAINTENANCE TYPE ' -r- 3 3 - 0 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF 7110flEb BLX93A 711002b 002705b T-33-07 BLX93A

    Untitled

    Abstract: No abstract text available
    Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for


    OCR Scan     		PDF 23SbOS

    BUK856-450IX

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener


    OCR Scan     		PDF BUK856-450IX T0220AB BUK856-450IX

    transistor marking 551

    Abstract: E551 1N MARKING marking code SAL sot-23
    Text: KST13/14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T ^ 2 S V Characteristic Symbol Collector-Base Voltage Collactor-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST13/14 OT-23 KST13 KST14 100mA 100mA, 100mA 100MHz transistor marking 551 E551 1N MARKING marking code SAL sot-23

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    OCR Scan     		PDF PHP5N20E T0220AB

    bi 370 transistor

    Abstract: JNI Corporation AA1A4p bi 370 transistor e PA33 nec j
    Text: SEC k Compound Transistor A l Î T / \ f Z AA1A4P f&tfc F*9ÜcN P N i 1J 3 > F 5 >•$>;*? Resistors Built-in Type NPN Silicon Epitaxial Transistor Medium Speed Switching ftWm/P A C K A G E ^/FEATUR ES DIMENSIONS Unit : mm o '<47 è I*3/Sï L t V ' ì t o


    OCR Scan     		PDF CycleS50 SC-43B bi 370 transistor JNI Corporation AA1A4p bi 370 transistor e PA33 nec j

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION


    OCR Scan     		PDF BC846W; BC847W; BC848W OT323 MBC670 BC846AW: BC846BW: BC847W: BC846W

    2SC3056

    Abstract: No abstract text available
    Text: Ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC3056, 2SC3056A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon NPN planar general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor


    OCR Scan     		PDF 2SC3056, 2SC3056A 2SC3056/2SC3056A 2SC3056