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    TRANSISTOR 1KT Search Results

    TRANSISTOR 1KT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1KT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KST4123 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		KST4123 OT-23 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    transistor 1kt

    Abstract: No abstract text available
    Text: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR » Collector-Emitter Voltage: V c e o = 1 6 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Sym bol Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		2N5551 625mW 250/iA, transistor 1kt PDF

    Untitled

    Abstract: No abstract text available
    Text: MPSA64 SEMICONDUCTOR FORWARD INTERKAHONAL ELECTRONICS LID . DARLINGTON _ TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR TRANSISTORS * High Collector-Emitter Voltage Vces=-30V * Collector D issipation; Pc=625mW Ta=25 “C ABSOLUTE MAXIMUM RATINGS at Tanfc=25'C


    OCR Scan     		MPSA64 625mW 300uS, -100uA -10mA -100mA -100mA 100MHZ PDF

    rds035

    Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
    Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW


    Original     		RHU002N06 2SD2167 56to270 2SB1132 2SD1664 82to390 2SB1188 2SD1766 2SB1182 2SD1758 rds035 rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198 PDF

    Untitled

    Abstract: No abstract text available
    Text: M O S M m w t i ï M O S Field E ffect P o w e r Transistor 2SK1492 N M O S F E T lif f l 2SK1492 i±, N MOS F E T T ':* <, X >f 'y -f > DC n & r>, W ¡5J l i È X 4 .y f -> Ì i mm DC- ^ Î C i jl i l î 'C 't o 0 3 .0 ± 0 . 2 ° ^dss = 250 V, I D DC) = ± 35 A


    OCR Scan     		2SK1492 2SK1492 PDF

    ICL8010

    Abstract: icl8010ac transistor a018 RTL 8019 DAC with BCD inputs ICL8020AMXJD ICL8018ACPD ICL8020 ICL8008 HyComp
    Text: D /A Conversion G ENERAL DESCRIPTIO N FEATURES • TTL Compatible: LOW— 0.8V HIGH— 2.0V • 12 Bit Accuracy • 40 nsec, Switching Speed • Wide Power Supply Range • Low Temperature Coefficient D/A-A/D Converters Digital Threshold Control Programmable Voltage Source


    OCR Scan     		ICL8018A ICL8010 icl8010ac transistor a018 RTL 8019 DAC with BCD inputs ICL8020AMXJD ICL8018ACPD ICL8020 ICL8008 HyComp PDF

    transistor j3003

    Abstract: svi 1302 9316V ESB 24-40
    Text: Contents Features. Applications. Block Diagram. Selection Guide.


    OCR Scan     		S-8324/8328 transistor j3003 svi 1302 9316V ESB 24-40 PDF

    marking code 1gt

    Abstract: transistor marking 1Dt transistor 1kt 1Ft SOT323 1Gt transistor BC847CW pin 1Ft TRANSISTOR 1GT MARKING 1Gt 27 marking code
    Text: Philips Semiconductors Product specification NPN general purpose transistors FEATURES BC846W; BC847W; BC848W PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.


    OCR Scan     		BC846W; BC847W; BC848W OT323 BC856W, BC857W, BC858W. BC846W BC846AW BC846BW marking code 1gt transistor marking 1Dt transistor 1kt 1Ft SOT323 1Gt transistor BC847CW pin 1Ft TRANSISTOR 1GT MARKING 1Gt 27 marking code PDF

    transistor 1BT

    Abstract: 1Ft SOT323 1Ft TRANSISTOR transistor 1Ht BC847CW1GT transistor 1kt BC846W 1Bt 65 1kt marking code npn 1bt
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification


    Original     		M3D102 BC846W; BC847W; BC848W OT323 BC856W, BC857W, transistor 1BT 1Ft SOT323 1Ft TRANSISTOR transistor 1Ht BC847CW1GT transistor 1kt BC846W 1Bt 65 1kt marking code npn 1bt PDF

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 PDF

    CAPACITOR 365pf

    Abstract: Theta-J solid state relay 100 theta-j solid LM111 LM329 LT1011 LT1011CN8 LT1011CS8 T0194 TUF* MARKING
    Text: u im TECHNOLOGY SPECIFICATION NOTICE LT1011CS8 J a n u a r y 1994 The specifications and pinout for the L T 1 0 1 1 C S 8 are identical to those of the L T 1 0 1 1 C N 8 . The mechanical drawing for the 8-pin S O IC package can be found on page 1 4 -1 6 of the 1992


    OCR Scan     		LT1011CS8 LT1011CS8 LT1011CN8. 01M4ITA T0194Â LM111 CAPACITOR 365pf Theta-J solid state relay 100 theta-j solid LM329 LT1011 LT1011CN8 T0194 TUF* MARKING PDF

    transistor 1BT

    Abstract: transistor 1Ht 1Ft SOT323 1kt marking code BC846BW transistor 1BT 88 marking code 1gt TRANSISTOR 1gt BC846W BC847W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification


    Original     		M3D102 BC846W; BC847W; BC848W OT323 BC856W, BC857W, transistor 1BT transistor 1Ht 1Ft SOT323 1kt marking code BC846BW transistor 1BT 88 marking code 1gt TRANSISTOR 1gt BC846W BC847W PDF

    HA1-2541-2

    Abstract: transistor k 2541 ai 2541-5 transistor ha1 AN-550 HA1-2541
    Text: HA-2541 ÎÜ HARRIS U S E M I C O N D U C T O R 40MHz, Fast Settling, Unity Gain Stable, Operational Amplifier November 1996 Features Description • U nity Gain B a n d w id th .40MHz • H igh S lew R a te . 250V/ns


    OCR Scan     		HA-2541 40MHz, HA-2541 40MHz 50V/ns HA1-2541-2 transistor k 2541 ai 2541-5 transistor ha1 AN-550 HA1-2541 PDF

    TRANSISTOR B509

    Abstract: No abstract text available
    Text: r r u n w LT1016 i TECHNOLOGY Ultra Fast Precision C om parator F€ATUR€S D C S C R IP T IO n • ■ ■ ■ ■ ■ ■ The LT1016 is an ultra fast 10ns comparator specifi­ cally designed to interface directly to TTL logic while operating off either a dual ± 5V supply or a single + 5V


    OCR Scan     		LT1016 LT1016 D0016 fO203-0 TRANSISTOR B509 PDF

    transistor k 4213

    Abstract: 400P Crystal transistor k 4213 m k 4213 CFL dimmer trailing LC866008A LC866012A LC866016A LC866020A TRANSISTOR P72
    Text: Ordering n u m b e r:EN 4213 _ CMOS LSI LC866020A/16A/12A/08A No.4213 SAMYD, 8-Bit Single Chip Microcomputer LC866020A On-chip 20K Bytes ROM and On-chip 384 Bytes 8-B it Single Chip M icrocomputer LC866016A On-chip 16K Bytes ROM and On-chip 384 Bytes 8-B it Single Chip M icrocomputer


    OCR Scan     		LC866020A/16A/12A/08A lc866020a lc866016a lc866012a lc866008a LC866020A/16A/12A/08A transistor k 4213 400P Crystal transistor k 4213 m k 4213 CFL dimmer trailing LC866008A TRANSISTOR P72 PDF

    application circuits of ic 74121

    Abstract: pulse generating circuit IC 74121 jtw 07 DIODE 74121 application as pulse generator 74121 full internal circuit diagram IC TTL 7402 LT1016CP LS 74121 LT319AH GAH 3
    Text: D 5 $7 7 ò LT1016 ULTRA-FAST PRECISION COMPARATOR F€flTUft€S D€SCftlPTIOfl • ■ ■ ■ ■ ■ ■ The LT1016 is an ultra fast 10ns comparator specifi­ cally designed to interface directly to TTL logic while operating off either a dual ± 5V supply or a single + 5V


    OCR Scan     		LT1016 application circuits of ic 74121 pulse generating circuit IC 74121 jtw 07 DIODE 74121 application as pulse generator 74121 full internal circuit diagram IC TTL 7402 LT1016CP LS 74121 LT319AH GAH 3 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG8Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 92.7±0-6 • 5±0.p The Electrodes are Isolated From Case. 7± 0 | 8 , 14±0.3 • 6 IGBTs are Built Into 1 Package.


    OCR Scan     		MG8Q6ES42 12-FAST-ON-TAH 2-93A3A PDF

    LA 7687 a

    Abstract: No abstract text available
    Text: GEC PLESSEY [ s e m i c o n d u c t o r s ! SP8861 1.3 GHz LOW POWER SINGLE-CHIP FREQUENCY SYNTHESISER Supersedes September 1990 Edition The SP8861 is a low power single chip synthesiser intended for professional radio applications, and contains all the elements (apart from the loop amplifier) to fabricate a


    OCR Scan     		SP8861 SP8861 0153nF 41627Q 0153iiF 1318nF 318X1Q LA 7687 a PDF

    transistor C 6092

    Abstract: transistor tt 6093
    Text: ISOCOfl C O M P O N E N T S LTD .V ?SC D • 4flflt,S10 □DOOiat, a i l ■ ISO T = -^ //-8 ^ SFH609-1, SFH609-2, SFH609-3 OPTICALLY COUPLED ISOLATORS ISOCOM, INC. 274 E HAMILTON AVE SUITE F CAMPBELL, CA. 95008 PACKAGE DIMENSIONS IN INCHES MM m r T m r


    OCR Scan     		SFH609-1, SFH609-2, SFH609-3 transistor C 6092 transistor tt 6093 PDF

    HA5004

    Abstract: HA-5004 IBP303E-6 FZ08
    Text: Harris Semiconductor M M 5004 H a rris A n alo g November 1991 H A -5 0 0 4 SPICE CURRENT FEEDBACK AMPLIFIER M A CR O -M O D EL A u th o rs: Steve J o s t and V erlin H ibner Intro du ctio n This paper describes the SPICE macro-m odel for the H A-5004 current feedback am plifier. The model was


    OCR Scan     		MM5004 HA-5004 HA-5004 MM5004 HA5004 IBP303E-6 FZ08 PDF

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N [ OPA26Q4 1 Dual FET-lnput, Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • LOW DISTORTION: 0.0003% at 1kHz LOW NOISE: 10nVWRz HIGH SLEW RATE: 25V/|IS WIDE GAIN-BANDWIDTH: 20MHz


    OCR Scan     		OPA26Q4 10nVWRz 20MHz DPA2604 313fc OPA2604 PDF

    SAMSUNG NAND Flash Qualification Report

    Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
    Text: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval.


    Original     		128Mb industria1980 30pcs 48TSOP1 SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0 PDF

    Triac TAG 9022

    Abstract: Transistor TEO 1279 DIL Reed relay RS -349-399 AKO 544 271 tda 7977 Triac TAG 9031 RS 434-396 TV SHARP IC TDA 9381 PS hall marking code A04 px625
    Text: Issued November 1986 7376 r Contents list and semiconductor device type index data Data library contents Issue Date Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system 'Minimaster 3' 2+10 telephone switching system


    OCR Scan     		PDF