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    TRANSISTOR 1X Search Results

    TRANSISTOR 1X Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F

    MMBT3904LT1

    Abstract: MMBT3906LT1
    Text: MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 1 0.97Ref. PNP Epitaxial Silicon Transistor 0.38Ref. MINO.1 0.4 1.9 Collector-Emitter Voltage: V CEO =-40V 3 0.124±0.10 2 Collector Dissipation:Pc=225mW


    Original     		PDF MMBT3906LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3904LT1. -10mA 100MHz 300uS MMBT3904LT1 MMBT3906LT1

    MMBT3904LT1

    Abstract: MMBT3906LT1
    Text: MMBT3904LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =40V 0.38Ref. MINO.1 0.124±0.10 2 Collector Dissipation:Pc=225mW


    Original     		PDF MMBT3904LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3906LT1. MMBT3904LT1 MMBT3906LT1

    MMBT3904LT1

    Abstract: MMBT3906LT1
    Text: MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 3 0.97Ref. 1 PNP Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =-40V 0.38Ref. MINO.1 0.124±0.10 2 Collector Dissipation:Pc=225mW


    Original     		PDF MMBT3906LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3904LT1. MMBT3904LT1 MMBT3906LT1

    2SC5343

    Abstract: No abstract text available
    Text: 2SC5343 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 1.3±0.2 1.9 Collector-Emitter Voltage: V CEO =40V 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 2 Collector Dissipation:Pc=225mW 0.5Ref. 0.38Ref. MINO.1 0.124±0.10 0.5Ref. 2.9±0.2 GENERAL PURPOSE TRANSISTOR


    Original     		PDF 2SC5343 OT-23 OT-23 97Ref. 225mW 38Ref. 100MHz 300uS 2SC5343

    2SC5343

    Abstract: No abstract text available
    Text: 2SC5343 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =40V 0.5Ref. 0.38Ref. MINO.1 0.01-0.10 Tolerance:0.1mm Marking 0.124±0.10 2 Collector Dissipation:Pc=225mW


    Original     		PDF 2SC5343 OT-23 OT-23 97Ref. 38Ref. 225mW 2SC5343

    Untitled

    Abstract: No abstract text available
    Text: 2SA1037AK SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Feature: 1 Package:SOT-23 Excellent Hfe Linearity. (3) Complements the 2SC2412K/2SC4081/2SC4617/2SC4617H/


    Original     		PDF 2SA1037AK OT-23 2SC2412K/2SC4081/2SC4617/2SC4617H/ 2SC5658/2SC1740S.

    T491D476M020AS

    Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA0912-250 OT502A SCA74 613524/06/pp11 T491D476M020AS TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS

    TRANSISTOR 1P

    Abstract: MMBT2907ALT1 2SD602 2SD602LT1
    Text: 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc max =225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Collector-Base Voltage Vcbo Rating Unit 75 1.


    Original     		PDF 2SD602LT1 MMBT2907ALT1 225mW 500mA 150mA 500mA 100MHz 062in TRANSISTOR 1P MMBT2907ALT1 2SD602 2SD602LT1

    2sa1576

    Abstract: 2SA20
    Text: 2SC2412K SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Feature: Package:SOT-23 1 Low Cob. Cob=2.0pF (2) Complements the 2SA1037AK/2SA1576/ 2SA1774/2SA1774H/2SA2029/2SA933AS.


    Original     		PDF 2SC2412K OT-23 2SA1037AK/2SA1576/ 2SA1774/2SA1774H/2SA2029/2SA933AS. 32MHZ 2sa1576 2SA20

    MMBT2907ALT1

    Abstract: No abstract text available
    Text: 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc max =225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Collector-Base Voltage Vcbo Rating Unit 75 1.


    Original     		PDF 2SD602LT1 MMBT2907ALT1 225mW 150mA 500mA 150mA 500mA 100MHz MMBT2907ALT1

    IN5817 schottky diode symbol

    Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original     		PDF TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222

    MMBT6520LT1

    Abstract: No abstract text available
    Text: MMBT6520LT1 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vce= -350V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol ating Unit Collector-Base Voltage Vcbo -350 V Collector-Emitter Voltage


    Original     		PDF MMBT6520LT1 225mW -350V -10mA -30mA -100mA -10mA 20MHz 00MHz 062in MMBT6520LT1

    MMBT6520LT1

    Abstract: No abstract text available
    Text: MMBT6520LT1 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vce= -350V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol ating Unit Collector-Base Voltage Vcbo -350 V Collector-Emitter Voltage


    Original     		PDF MMBT6520LT1 225mW -350V -30mA -10mA -100mA -10mA 20MHz 00MHz MMBT6520LT1

    TRANSISTOR MMBT3904LT1

    Abstract: MMBT3906LT1 MMBT3904LT1
    Text: MMBT3904LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT3906LT1 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF MMBT3904LT1 MMBT3906LT1 225mW OT-23 TRANSISTOR MMBT3904LT1 MMBT3906LT1 MMBT3904LT1

    TRANSISTOR MMBT3904LT1

    Abstract: No abstract text available
    Text: MMBT3906LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT3904LT1 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF MMBT3906LT1 MMBT3904LT1 225mW OT-23 TRANSISTOR MMBT3904LT1

    MMBT4403LT

    Abstract: No abstract text available
    Text: MMBT4403LT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Package:SOT-23 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -40V ABSOLUTE MAXIMUM RATINGS at Tamb=25℃


    Original     		PDF MMBT4403LT1 OT-23 225mW MMBT4403LT

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401LT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Package:SOT-23 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF MMBT4401LT1 OT-23 225mW

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope


    OCR Scan     		PDF BUK581-100A OT223 BUK581-100A OT223.

    2N5332

    Abstract: No abstract text available
    Text: TYPE 2N5332 P-N-P SILICON TRANSISTOR BU LL E T IN NO. DL-S 6810830, SEP T EM BE R 1968 RADIATION-TOLERANT TRANSISTOR FOR SWITCHING AND GENERAL PURPOSE VHF-UHF AMPLIFIER APPLICATIONS • Guaranteed lCBo , hFE, and after 1x1 O'5 Fast Neutrons/cm2 V CE<ut • Complément to N-P-N type 2N5399


    OCR Scan     		PDF 2N5332 2N5399

    MAR 544 MOSFET TRANSISTOR

    Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically


    OCR Scan     		PDF 4th/Mar/02 RD70HVF1 75MHz70W 520MHz50W RD70HVF1 175MHz 520MHz MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi 7386 mos transistor d 2689 MOSFET 2095 transistor