TRANSISTOR 2 3 M Search Results

TRANSISTOR 2 3 M Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 2 3 M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
3055 transistor Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055 Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for	OCR Scan	D004T11 Q62702-U58 B--01 fl23Sb05 A23SbDS B--03 3055 transistor 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055	PDF
Untitled Abstract: No abstract text available Text: TIP120 Series PNP/NPN Silicon Power Transistor P b Lead Pb -Free 1 FEATURES: * Medium Power Complementary silicon transistors 2 3 1. BASE 2. COLLECTOR 3. EMITTER * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220	Original	TIP120 TIP125 O-220 TIP120 TIP125 TIP121 TIP126 TIP122 TIP127	PDF
2FK transistor Abstract: No abstract text available Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units	Original	MMBT2907AK MMBT2907AK OT-23 2FK transistor	PDF
Untitled Abstract: No abstract text available Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units	Original	MMBT3904K MMBT3904K OT-23	PDF
2tk transistor Abstract: No abstract text available Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO	Original	MMBT4403K MMBT4403K OT-23 2tk transistor	PDF
Untitled Abstract: No abstract text available Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage	Original	MMBT3906K MMBT3906K OT-23	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR 3 3 1 FEATURES 2 2 Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1015 SOT-23 1 SOT-523 3 3	Original	MMBT1815 150mA MMBT1015 OT-23 OT-523 OT-113 OT-323 MMBT1815L MMBT1815-x-AC3-R MMBT1815L-x-AC3-R	PDF
MMBTA05 Abstract: No abstract text available Text: MMBTA05 NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-23 The MMBTA05 is Amplifier Transistor  A L FEATURES 3 3 Driver Transistor  1 1 2 K E 2 D MARKING	Original	MMBTA05 OT-23 MMBTA05 100mA 100mA, 100MHz 26-Oct-2009	PDF
MMBT5088LT1 Abstract: No abstract text available Text: MMBT5088LT1 SOT-23 TRANSISTOR Description SOT-23 Medium Power Amplifier. NPN Silicon Transistor. 3 Features Large collector current:I Cmax =50mA 1 Low collector saturation voltage h FE RANK enabling low voltage operation 2 3 1 1.BASE 2.EMITTER 3.COLLECTOR	Original	MMBT5088LT1 OT-23 OT-23 100MHz MMBT5088LT1	PDF
transistor 3055 Abstract: 3055 3055 transistor n3055 3055 npn 10a v150 T 3055 on 3055 A 3055 Q62702-U58 Text: IMPIM-Transistor fü r leistungsstarke IMF-Endstufen 2 IM 3055 2 N 3 0 5 5 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 D IN 41 8 72 T O - 3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten	OCR Scan	Q62702-U58 Q62702-U58-P Q62901â B11-A Q62901-B13-C transistor 3055 3055 3055 transistor n3055 3055 npn 10a v150 T 3055 on 3055 A 3055	PDF
MMBT5087LT1 Abstract: No abstract text available Text: MMBT5087LT1 SOT-23 TRANSISTOR Description SOT-23 Medium Power Amplifier. PNP Silicon Transistor. 3 Features Large collector current:I Cmax =-50mA 1 Low collector saturation voltage h FE RANK enabling low voltage operation 2 3 1 1.BASE 2.EMITTER 3.COLLECTOR	Original	MMBT5087LT1 OT-23 OT-23 -50mA 100MHz MMBT5087LT1	PDF
2SD596 Abstract: transistor dv4 2SB624 Text: 2SD596 SILICON TRANSISTOR SOT-23 3 AUDIO FREQUENCY POWER AMPLIFIER 1 NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA	Original	2SD596 OT-23 2SB624 100mA) 200mA 2SD596 transistor dv4	PDF
marking G1 sot23 UTC Abstract: No abstract text available Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V High current gain 2 1 APPLICATIONS Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR	Original	MMBT5551 OT-23 QW-R206-010, marking G1 sot23 UTC	PDF
Untitled Abstract: No abstract text available Text: 2 3 0 3 3 ^ 4 0 0 0 0 6 7 3 53ft CSD1306 HL SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CSD1306E-6E J.0 _ 2.8 0.14 0.48 "•^pnü9 CT38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.70	OCR Scan	CSD1306 CSD1306E-6E 23633T4	PDF

nec 2035 744 Abstract: MARKING W1 2SC5618 2SC5618-T3 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package	Original	2SC5618 2SC5618-T3 nec 2035 744 MARKING W1 2SC5618 2SC5618-T3	PDF
nec 2035 744 Abstract: 2SC5618 2SC5618-T3 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package	Original	2SC5618 2SC5618-T3 nec 2035 744 2SC5618 2SC5618-T3	PDF
Untitled Abstract: No abstract text available Text: 2 3 Û 3 3 C14 0Q00Ö4Ö 362 • CMBT6517 HIGH-VOLTAGE TRANSISTOR N -F -N transistor Marking CMBT6517 = 1Z PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ■C> 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter	OCR Scan	CMBT6517	PDF
Untitled Abstract: No abstract text available Text: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION Audio frequency power amplifier Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS SYMBOL	Original	MMBT1616/A MMBT1616 OT-23 MMBT1616A QW-R206-036 100mA	PDF
date code marking NEC Abstract: NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR Text: DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz 2 • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz	Original	NE685M33 NE685M33-T3 date code marking NEC NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol	Original	FJX2222A 325mW OT-323	PDF
TRANSISTOR 1616 Abstract: No abstract text available Text: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION Audio frequency power amplifier Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS PARAMETER	Original	MMBT1616/A MMBT1616 OT-23 MMBT1616A width10ms, QW-R206-036 TRANSISTOR 1616	PDF
transistor s1p Abstract: MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol	Original	FJX2222A 325mW OT-323 transistor s1p MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor	PDF
MT108 motorola transistor Abstract: mt108 MMFT108T1 SMD310 Text: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA Field Effect Transistor MMFT108T1 N–Channel Enhancement–Mode Logic Level SOT–223  2, 4 DRAIN TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT 1 GATE 4 3 SOURCE 1 2 3 CASE 318E–04, STYLE 3	Original	MMFT108T1/D MMFT108T1 261AA) MT108 MT108 motorola transistor mt108 MMFT108T1 SMD310	PDF
MPS3702 Abstract: MPS3703 2N3702 2N3703 Text: MPS3702 silicon MPS3703 PNP SILICON ANNULAR TRANSISTOR PNP SILICON AMPLIFIER TRANSISTOR . designed fo r use in low -current, large-signal a m p lifier applications. • Device Sim ilar E lectrically to 2 N 3 7 0 2 , 2 N 3 7 0 3 M AXIM U M RATINGS R a tin g	OCR Scan	MPS3702 MPS3703 2N3702, 2N3703 MPS3703 Gain121 MPS3702 2N3702 2N3703	PDF

TRANSISTOR 2 3 M Search Results

TRANSISTOR 2 3 M Result Highlights (5)

TRANSISTOR 2 3 M Datasheets Context Search

3055 transistor

Untitled

2FK transistor

Untitled

2tk transistor

Untitled

Untitled

MMBTA05

MMBT5088LT1

transistor 3055

MMBT5087LT1

2SD596

marking G1 sot23 UTC

Untitled

nec 2035 744

nec 2035 744

Untitled

Untitled

date code marking NEC

Untitled

TRANSISTOR 1616

transistor s1p

MT108 motorola transistor

MPS3702