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    TRANSISTOR 2 A SOT23 Search Results

    TRANSISTOR 2 A SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2 A SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFT25

    Abstract: MSB003 MEA909
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23


    Original     		PDF BFT25 MSB00ny BFT25 MSB003 MEA909

    BFT25

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF


    Original     		PDF BFT25 MSB003 R77/02/pp10 BFT25

    BFT25

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF


    Original     		PDF BFT25 MSB003 R77/02/pp10 BFT25 MSB003

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF DTA143EE 416/SC

    6aa marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF DTA114YE 416/SC 6aa marking

    MMBTA05

    Abstract: No abstract text available
    Text: MMBTA05 NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-23 The MMBTA05 is Amplifier Transistor  A L FEATURES 3 3 Driver Transistor  1 1 2 K E 2 D MARKING


    Original     		PDF MMBTA05 OT-23 MMBTA05 100mA 100mA, 100MHz 26-Oct-2009

    Untitled

    Abstract: No abstract text available
    Text: SO T 23 PBSS5230T 30 V, 2 A PNP low VCEsat BISS transistor Rev. 2 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5230T PBSS4230T. AEC-Q101

    TRANSISTOR SMD MARKING CODE 3G

    Abstract: No abstract text available
    Text: SO T2 3 PBSS5230T 30 V, 2 A PNP low VCEsat BISS transistor Rev. 2 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5230T PBSS4230T. AEC-Q101 TRANSISTOR SMD MARKING CODE 3G

    MMBTA13

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA13 MMBTA13 OT-23 QW-R206-006

    MMBTA13

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA13 MMBTA13 OT-23 100ms QW-R206-006

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA14 MMBTA14 OT-23 CHARACTERISTIC50 100mA 100mA 100MHz QW-R206-038

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA14 MMBTA14 OT-23 QW-R206-038

    3D marking sot23

    Abstract: PBSS4230T PBSS5230T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat BISS transistor Product specification 2003 Sep 29 Philips Semiconductors Product specification 30 V, 2 A NPN low VCEsat (BISS) transistor PBSS4230T QUICK REFERENCE DATA FEATURES


    Original     		PDF M3D088 PBSS4230T SCA75 R75/01/pp7 3D marking sot23 PBSS4230T PBSS5230T

    marking code 10 sot23

    Abstract: PNP POWER TRANSISTOR SOT23 PBSS5230T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 30 V, 2 A PNP low VCEsat (BISS) transistor PBSS5230T FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D088 PBSS5230T SCA75 R75/01/pp7 marking code 10 sot23 PNP POWER TRANSISTOR SOT23 PBSS5230T

    PBSS5250T

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Oct 09 Philips Semiconductors Product specification 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250T QUICK REFERENCE DATA FEATURES


    Original     		PDF M3D088 PBSS5250T SCA75 R75/01/pp7 PBSS5250T

    sot23 transistor marking ZF

    Abstract: PBSS4240T PBSS5240T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2001 Oct 31 2004 Jan 15 Philips Semiconductors Product specification 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T QUICK REFERENCE DATA


    Original     		PDF PBSS5240T OT89/SOT223 SCA76 R75/02/pp9 sot23 transistor marking ZF PBSS4240T PBSS5240T

    PBSS4240T

    Abstract: PBSS5240T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2001 Jul 13 2004 Jan 09 Philips Semiconductors Product specification 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T QUICK REFERENCE DATA


    Original     		PDF PBSS4240T OT89/SOT223 SCA76 R75/02/pp7 PBSS4240T PBSS5240T

    smd code marking HD SOT23

    Abstract: No abstract text available
    Text: SO T2 3 PBSS5130T 30 V; 1 A PNP low VCEsat BISS transistor 9 July 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits


    Original     		PDF PBSS5130T AEC-Q101 smd code marking HD SOT23

    PBSS4240T

    Abstract: PBSS5240T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2001 Jul 13 2004 Jan 09 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T FEATURES QUICK REFERENCE DATA


    Original     		PDF PBSS4240T OT89/SOT223 R75/02/pp7 PBSS4240T PBSS5240T

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT PBSS5240T 40 V, 2 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2001 Oct 31 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T FEATURES QUICK REFERENCE DATA


    Original     		PDF PBSS5240T OT89/SOT223 R75/02/pp9

    sot23 transistor marking ZF

    Abstract: PBSS4240T PBSS5240T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2001 Oct 31 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T FEATURES QUICK REFERENCE DATA


    Original     		PDF PBSS5240T OT89/SOT223 R75/02/pp9 sot23 transistor marking ZF PBSS4240T PBSS5240T

    E2p 96 transistor

    Abstract: BFS17 BFS17A MSB003
    Text: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		PDF 711Dflgb BFS17A MSB003 E2p 96 transistor BFS17

    Untitled

    Abstract: No abstract text available
    Text: bbS3^31 002514b MS3 H A P X Philips Semiconductors N AKER PHILIPS/DISCRETE Product specification b7E D NPN 2 GHz wideband transistor DESCRIPTION c BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application in thick and thin-film


    OCR Scan     		PDF 002514b BFR53 0D251SD bbS3T31

    E2p 28 transistor

    Abstract: E2p transistor transistor applications
    Text: Short-form product specification Philips Semiconductors NPN 3 GHz wideband transistor BFS17A PINNING APPLICATIONS • It is intended for a wide range of RF applications such as TV-tuners. PIN DESCRIPTION DESCRIPTION 1 base 2 emitter 3 collector NPN transistor in a plastic SOT23


    OCR Scan     		PDF BFS17A E2p 28 transistor E2p transistor transistor applications