Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2 AMP 3 VOLT Search Results

    TRANSISTOR 2 AMP 3 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2 AMP 3 VOLT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KSC2715

    Abstract: No abstract text available
    Text: KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 35 Units V VCEO VEBO


    Original     		KSC2715 OT-23 KSC2715 PDF

    KSC2715

    Abstract: No abstract text available
    Text: KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP • High Power Gain : GPE=30dB 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter


    Original     		KSC2715 OT-23 KSC2715 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP • High Power Gain : GPE=30dB 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter


    Original     		KSC2715 OT-23 OT-23 PDF

    KSC2715

    Abstract: No abstract text available
    Text: KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 35 Units V VCEO VEBO


    Original     		KSC2715 OT-23 KSC2715 PDF

    KSC2715

    Abstract: No abstract text available
    Text: KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP • High Power Gain : GPE=30dB 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter


    Original     		KSC2715 OT-23 KSC2715 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC838 KSC838 FM Radio RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor


    Original     		KSC838 250MHz KSC838 PDF

    KSC838

    Abstract: No abstract text available
    Text: KSC838 KSC838 FM Radio RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor


    Original     		KSC838 250MHz KSC838 PDF

    KSC838

    Abstract: No abstract text available
    Text: KSC838 KSC838 FM Radio RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor


    Original     		KSC838 250MHz KSC838 PDF

    KSC839

    Abstract: No abstract text available
    Text: KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product : fT=200MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


    Original     		KSC839 200MHz KSC839 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ISSUE 3 – JUNE 94 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteritics up to 1 Amp * Spice model available C B E E-Line


    Original     		ZTX957 100ms PDF

    KSC838

    Abstract: No abstract text available
    Text: KSC838 KSC838 FM Radio RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


    Original     		KSC838 250MHz KSC838 PDF

    KSC839

    Abstract: FM AM Radio
    Text: KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product : fT=200MHz • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		KSC839 200MHz KSC839CYTA KSC839YBU KSC839 FM AM Radio PDF

    KSC839

    Abstract: No abstract text available
    Text: KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product : fT=200MHz • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		KSC839 200MHz KSC839 PDF

    KSC839

    Abstract: No abstract text available
    Text: KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product : fT=200MHz • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		KSC839 200MHz KSC839 PDF

    c2669

    Abstract: No abstract text available
    Text: KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original     		KSC2669 250MHz O-92S Breakdow000 KSC2669 KSC2669OBU KSC2669YTA c2669 PDF

    KSC2669

    Abstract: No abstract text available
    Text: KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original     		KSC2669 250MHz O-92S KSC2669 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original     		KSC2669 250MHz O-92S O-92S PDF

    2sd400

    Abstract: 2sD400 npn transistor 2sd400 transistor
    Text: 2SD400 TO-92MOD Transistor NPN TO-92MOD 1. EMITTER 1 2 3 5.800 6.200 2. COLLECTOR 8.400 8.800 3. BASE 0.900 1.100 Features — 0.400 0.600 13.800 14.200 Low-Frequency power Amp, Electronic Governor Applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		2SD400 O-92MOD O-92MOD 500mA, 2sd400 2sD400 npn transistor 2sd400 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN l i t A General O TRANSISTOR CHI P Semiconductor Industries, Inc. " 2 " DIODE & TRANSISTOR CHIPS Typical Device Types: 2N3506,2N3507 01 3 AMP Bonding Pad Areas Fast Switching Bam 2 5 X 4 mils Emitter (2) 6.5 X 4.5 mils Typical Switching (TO-5 Package)


    OCR Scan     		2N3506 2N3507 15nsec 25nsec 45nsec 100uA 500mA, PDF

    TA7666P

    Abstract: TA7739P "Led Level Meter Driver" ta7366p TA7666 ta7366 TA8188N 10 channel GRAPHIC EQUALIZER TA8189N TA7366P/F
    Text: Preamplifier/Line Amplifie r Type No. Function/Features Package TA7137P SIP9-P-A TA7325P SIP9-P-A Car Audio Pre amp. with ALC transistor. Recommended Equpment Radio GeneralHome Cassette Stereo use Amp. • Voltage ■ 3 - 15V ■ 7 - 18V Built-in 2 channels. Built-in muting circuit.


    OCR Scan     		TA7137P TA7325P TA7330P TA7330F TA7705F TA7705P TA7668BP TA7709P TA7709F TA7739P TA7666P "Led Level Meter Driver" ta7366p TA7666 ta7366 TA8188N 10 channel GRAPHIC EQUALIZER TA8189N TA7366P/F PDF

    2SC4204

    Abstract: HPG800
    Text: Ordering num ber:EN 2 5 3 1 A 2SC4204 N 0.2 5 3 1 A NPN Epitaxial Planar Silicon Transistor High-hpE* AF Amp Applications Applications AF amp, various drivers Features |Adoption of MBIT process High DC current gain hpg=800 to 3200 jLarge current capacity (IC=0.7A)


    OCR Scan     		2SC4204 2SC4204 HPG800 PDF

    SFT8200

    Abstract: No abstract text available
    Text: preliminary Data Sheet SFT8200 10 AMP RADIATION TOLERANT PNP TRANSISTOR 14 830 Valley V iew Avenue La M irada. California 9 0 6 3 8 100 VOLTS 2 1 3 9 2 1 -9 6 6 0 T W X 9 1 0 -5 8 3 -4 8 0 7 FAX 2 1 3 -9 2 1 -2 3 9 6 CASE STYLE W JEDEC TO—5 FEATURES •


    OCR Scan     		SFT8200 150MHz 150ns 500mAdc) PDF

    high voltage high current darlington array 18

    Abstract: D74A5D c 623
    Text: G E SOLID STATE t>fi 3ñ7SGñl □ □ 0 ci2fl3 2 y - ^ 3 — '^ 5 ~ D74A5D NPN POWER DARLINGTON TRANSISTOR ARRAY 100 VOLTS 5 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications.


    OCR Scan     		D74A5D D74A5D high voltage high current darlington array 18 c 623 PDF

    2SC950

    Abstract: 2SC951 2sc950 transistor 2SA573 2SA574
    Text: Si PNP TRANSISTOR 2SA573, 2SA574 EPOXY MOLDED, AUDIO AMP., RF AMP., SWITCHING • A BSO LU TE M A X IM U M R A T IN G S Ta : 25°C 2SA573 -3 0 -2 5 "60 -5 0 V V ceo . . V ebo .


    OCR Scan     		2SA573, 2SA574 2SA573 -50mA, -10mA 2SA573 2SA574, 2SC950 2SC951 2sc950 transistor 2SA574 PDF